DE69505348D1 - Hochspannungs-MOSFET mit Feldplatten-Elektrode und Verfahren zur Herstellung - Google Patents
Hochspannungs-MOSFET mit Feldplatten-Elektrode und Verfahren zur HerstellungInfo
- Publication number
- DE69505348D1 DE69505348D1 DE69505348T DE69505348T DE69505348D1 DE 69505348 D1 DE69505348 D1 DE 69505348D1 DE 69505348 T DE69505348 T DE 69505348T DE 69505348 T DE69505348 T DE 69505348T DE 69505348 D1 DE69505348 D1 DE 69505348D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- high voltage
- field plate
- plate electrode
- voltage mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0882—Disposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0886—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95830045A EP0730309B1 (de) | 1995-02-21 | 1995-02-21 | Hochspannungs-MOSFET mit Feldplatten-Elektrode und Verfahren zur Herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69505348D1 true DE69505348D1 (de) | 1998-11-19 |
DE69505348T2 DE69505348T2 (de) | 1999-03-11 |
Family
ID=8221853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69505348T Expired - Fee Related DE69505348T2 (de) | 1995-02-21 | 1995-02-21 | Hochspannungs-MOSFET mit Feldplatten-Elektrode und Verfahren zur Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6093588A (de) |
EP (1) | EP0730309B1 (de) |
JP (1) | JPH08255913A (de) |
DE (1) | DE69505348T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW400560B (en) * | 1996-12-23 | 2000-08-01 | Koninkl Philips Electronics Nv | Semiconductor device |
TW366543B (en) * | 1996-12-23 | 1999-08-11 | Nxp Bv | Semiconductor device |
JP3142057B2 (ja) | 1997-11-13 | 2001-03-07 | 日本電気株式会社 | 半導体装置とその製造方法、及び駆動装置 |
US6441431B1 (en) * | 1998-12-04 | 2002-08-27 | Texas Instruments Incorporated | Lateral double diffused metal oxide semiconductor device |
JP2001094094A (ja) | 1999-09-21 | 2001-04-06 | Hitachi Ltd | 半導体装置およびその製造方法 |
US6429077B1 (en) * | 1999-12-02 | 2002-08-06 | United Microelectronics Corp. | Method of forming a lateral diffused metal-oxide semiconductor transistor |
JP2002314065A (ja) * | 2001-04-13 | 2002-10-25 | Sanyo Electric Co Ltd | Mos半導体装置およびその製造方法 |
EP1291924A1 (de) * | 2001-09-10 | 2003-03-12 | STMicroelectronics S.r.l. | MOS-Halbleiteranordnung mit einem Bodybereich |
EP1296378A1 (de) * | 2001-09-21 | 2003-03-26 | STMicroelectronics S.r.l. | MOS-Halbleiteranordnung und Verfahren zu deren Herstellung |
JP4228586B2 (ja) * | 2002-05-21 | 2009-02-25 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
US20040079974A1 (en) * | 2002-10-24 | 2004-04-29 | Texas Instruments Incorporated | Method for manufacturing a semiconductor device using dummy openings in a photoresist material and an LDMOS device manufactured in accordance with the method |
US6870218B2 (en) * | 2002-12-10 | 2005-03-22 | Fairchild Semiconductor Corporation | Integrated circuit structure with improved LDMOS design |
EP1577952B1 (de) * | 2004-03-09 | 2018-07-04 | STMicroelectronics Srl | Verfahren zur Herstellung eines Hochspannungsfeldeffekttransistors mit isoliertem Gate |
US7122876B2 (en) * | 2004-08-11 | 2006-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Isolation-region configuration for integrated-circuit transistor |
US8093663B2 (en) * | 2006-05-09 | 2012-01-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device, method of fabricating the same, and patterning mask utilized by the method |
US20080042221A1 (en) * | 2006-08-15 | 2008-02-21 | Liming Tsau | High voltage transistor |
US8174071B2 (en) * | 2008-05-02 | 2012-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | High voltage LDMOS transistor |
US7906810B2 (en) * | 2008-08-06 | 2011-03-15 | United Microelectronics Corp. | LDMOS device for ESD protection circuit |
US8378422B2 (en) * | 2009-02-06 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrostatic discharge protection device comprising a plurality of highly doped areas within a well |
KR101450437B1 (ko) | 2013-03-12 | 2014-10-14 | 주식회사 동부하이텍 | Ldmos 소자와 그 제조 방법 |
US10121779B2 (en) * | 2016-12-13 | 2018-11-06 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with high current capacity and methods for producing the same |
JP2019054106A (ja) * | 2017-09-14 | 2019-04-04 | 株式会社東芝 | 半導体装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL96608C (de) * | 1969-10-03 | |||
US3863330A (en) * | 1973-08-02 | 1975-02-04 | Motorola Inc | Self-aligned double-diffused MOS devices |
US4209716A (en) * | 1977-05-31 | 1980-06-24 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in second-level polycrystalline silicon layer |
US4333225A (en) * | 1978-12-18 | 1982-06-08 | Xerox Corporation | Method of making a circular high voltage field effect transistor |
NL8202686A (nl) * | 1982-07-05 | 1984-02-01 | Philips Nv | Werkwijze ter vervaardiging van een veldeffektinrichting met geisoleerde stuurelektrode, en inrichting vervaardigd volgens de werkwijze. |
JPS61248565A (ja) * | 1985-04-26 | 1986-11-05 | Mitsubishi Electric Corp | 半導体装置 |
US4866495A (en) * | 1987-05-27 | 1989-09-12 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
GB2206993A (en) * | 1987-06-08 | 1989-01-18 | Philips Electronic Associated | A method of manufacturing a semiconductor device |
US5159425A (en) * | 1988-06-08 | 1992-10-27 | Ixys Corporation | Insulated gate device with current mirror having bi-directional capability |
JP3092940B2 (ja) * | 1990-02-01 | 2000-09-25 | クウィッグ,フレッド,エル. | 減少させたゲート容量を有するmosfet構成体及びその製造方法 |
EP0487022B1 (de) * | 1990-11-23 | 1997-04-23 | Texas Instruments Incorporated | Verfahren zum gleichzeitigen Herstellen eines Feldeffekttransistors mit isoliertem Gate und eines Bipolartransistors |
US5404040A (en) * | 1990-12-21 | 1995-04-04 | Siliconix Incorporated | Structure and fabrication of power MOSFETs, including termination structures |
JPH04273165A (ja) * | 1991-02-27 | 1992-09-29 | Nissan Motor Co Ltd | 横形二重拡散mosfetの製造方法 |
US5258636A (en) * | 1991-12-12 | 1993-11-02 | Power Integrations, Inc. | Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes |
IT1254799B (it) * | 1992-02-18 | 1995-10-11 | St Microelectronics Srl | Transistore vdmos con migliorate caratteristiche di tenuta di tensione. |
JPH05283680A (ja) * | 1992-04-01 | 1993-10-29 | Ricoh Co Ltd | Mos型半導体装置とその製造方法 |
US5585657A (en) * | 1992-04-16 | 1996-12-17 | Texas Instruments Incorporated | Windowed and segmented linear geometry source cell for power DMOS processes |
DE69321966T2 (de) * | 1993-12-24 | 1999-06-02 | Cons Ric Microelettronica | Leistungs-Halbleiterbauelement |
US5548147A (en) * | 1994-04-08 | 1996-08-20 | Texas Instruments Incorporated | Extended drain resurf lateral DMOS devices |
US5723893A (en) * | 1996-05-28 | 1998-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating double silicide gate electrode structures on CMOS-field effect transistors |
-
1995
- 1995-02-21 EP EP95830045A patent/EP0730309B1/de not_active Expired - Lifetime
- 1995-02-21 DE DE69505348T patent/DE69505348T2/de not_active Expired - Fee Related
-
1996
- 1996-02-21 JP JP8033939A patent/JPH08255913A/ja active Pending
-
1998
- 1998-02-04 US US09/018,410 patent/US6093588A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0730309A1 (de) | 1996-09-04 |
US6093588A (en) | 2000-07-25 |
JPH08255913A (ja) | 1996-10-01 |
DE69505348T2 (de) | 1999-03-11 |
EP0730309B1 (de) | 1998-10-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |