DE69505065T2 - Lichtemittierende Halbleitervorrichtung auf einem Träger mit schräger Oberfläche zur Elimination des Streulichtes - Google Patents

Lichtemittierende Halbleitervorrichtung auf einem Träger mit schräger Oberfläche zur Elimination des Streulichtes

Info

Publication number
DE69505065T2
DE69505065T2 DE69505065T DE69505065T DE69505065T2 DE 69505065 T2 DE69505065 T2 DE 69505065T2 DE 69505065 T DE69505065 T DE 69505065T DE 69505065 T DE69505065 T DE 69505065T DE 69505065 T2 DE69505065 T2 DE 69505065T2
Authority
DE
Germany
Prior art keywords
light
eliminate
support
semiconductor device
inclined surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69505065T
Other languages
English (en)
Other versions
DE69505065D1 (de
Inventor
Masahiro Torikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69505065D1 publication Critical patent/DE69505065D1/de
Application granted granted Critical
Publication of DE69505065T2 publication Critical patent/DE69505065T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69505065T 1994-07-21 1995-07-20 Lichtemittierende Halbleitervorrichtung auf einem Träger mit schräger Oberfläche zur Elimination des Streulichtes Expired - Fee Related DE69505065T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6190957A JPH0837339A (ja) 1994-07-21 1994-07-21 反射光防止型半導体レーザダイオード装置

Publications (2)

Publication Number Publication Date
DE69505065D1 DE69505065D1 (de) 1998-11-05
DE69505065T2 true DE69505065T2 (de) 1999-06-10

Family

ID=16266495

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69505065T Expired - Fee Related DE69505065T2 (de) 1994-07-21 1995-07-20 Lichtemittierende Halbleitervorrichtung auf einem Träger mit schräger Oberfläche zur Elimination des Streulichtes

Country Status (5)

Country Link
US (1) US5665982A (de)
EP (1) EP0693808B1 (de)
JP (1) JPH0837339A (de)
DE (1) DE69505065T2 (de)
HK (1) HK1009058A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002026439A (ja) * 2000-07-03 2002-01-25 Denso Corp 半導体発光素子
US6967979B2 (en) 2000-10-06 2005-11-22 Sharp Kabushiki Kaisha Semiconductor laser device, optical pickup and fabrication method of semiconductor laser device
CA2398658A1 (en) 2001-02-05 2002-08-15 Sumitomo Electric Industries, Ltd. Optical transmitter
JP2002350793A (ja) * 2001-05-23 2002-12-04 Mitsubishi Electric Corp 光電変換半導体装置
US6907054B2 (en) 2001-06-29 2005-06-14 Sharp Kabushiki Kaisha Semiconductor laser device
US7343535B2 (en) * 2002-02-06 2008-03-11 Avago Technologies General Ip Dte Ltd Embedded testing capability for integrated serializer/deserializers
US6982437B2 (en) * 2003-09-19 2006-01-03 Agilent Technologies, Inc. Surface emitting laser package having integrated optical element and alignment post
US20050063431A1 (en) 2003-09-19 2005-03-24 Gallup Kendra J. Integrated optics and electronics
US20050063648A1 (en) * 2003-09-19 2005-03-24 Wilson Robert Edward Alignment post for optical subassemblies made with cylindrical rods, tubes, spheres, or similar features
US7520679B2 (en) * 2003-09-19 2009-04-21 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Optical device package with turning mirror and alignment post
US6998691B2 (en) * 2003-09-19 2006-02-14 Agilent Technologies, Inc. Optoelectronic device packaging with hermetically sealed cavity and integrated optical element
US6953990B2 (en) * 2003-09-19 2005-10-11 Agilent Technologies, Inc. Wafer-level packaging of optoelectronic devices
JP2005116583A (ja) * 2003-10-03 2005-04-28 Pentax Corp 光半導体装置
US20050213995A1 (en) * 2004-03-26 2005-09-29 Myunghee Lee Low power and low jitter optical receiver for fiber optic communication link
JP5277610B2 (ja) 2007-10-29 2013-08-28 日亜化学工業株式会社 発光装置及び面発光装置並びに発光装置用パッケージ
US10884198B2 (en) * 2015-03-24 2021-01-05 Samtec, Inc Optical block with textured surface

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4119363A (en) * 1976-03-18 1978-10-10 Bell Telephone Laboratories Incorporated Package for optical devices including optical fiber-to-metal hermetic seal
JPS59193080A (ja) * 1983-04-15 1984-11-01 Hitachi Ltd 発光半導体装置
JPS6154689A (ja) * 1984-08-24 1986-03-18 Fujitsu Ltd 光半導体装置
DE3677658D1 (de) * 1985-07-29 1991-04-04 Mitsubishi Electric Corp Optische kopfvorrichtung.
JPS63102387A (ja) * 1986-10-20 1988-05-07 Shinko Electric Ind Co Ltd 半導体レ−ザ−装置用パツケ−ジ
JP2579317B2 (ja) * 1987-07-20 1997-02-05 ローム 株式会社 半導体レ−ザ装置
JPH03114278A (ja) * 1989-09-27 1991-05-15 Matsushita Electric Ind Co Ltd 光半導体装置およびその製造方法
DE69124822T2 (de) * 1990-04-27 1997-10-09 Omron Tateisi Electronics Co Lichtemittierende Halbleitervorrichtung mit Fresnel-Linse
JPH04150085A (ja) * 1990-10-12 1992-05-22 Nec Corp 半導体レーザパッケージ
JPH04255921A (ja) * 1991-02-08 1992-09-10 Fujitsu Ltd 光学的記憶装置

Also Published As

Publication number Publication date
JPH0837339A (ja) 1996-02-06
DE69505065D1 (de) 1998-11-05
HK1009058A1 (en) 1999-05-21
US5665982A (en) 1997-09-09
EP0693808A1 (de) 1996-01-24
EP0693808B1 (de) 1998-09-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC COMPOUND SEMICONDUCTOR DEVICES, LTD., KAWASAKI

8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee