DE69514304D1 - Lichtemittierende Vorrichtung - Google Patents
Lichtemittierende VorrichtungInfo
- Publication number
- DE69514304D1 DE69514304D1 DE69514304T DE69514304T DE69514304D1 DE 69514304 D1 DE69514304 D1 DE 69514304D1 DE 69514304 T DE69514304 T DE 69514304T DE 69514304 T DE69514304 T DE 69514304T DE 69514304 D1 DE69514304 D1 DE 69514304D1
- Authority
- DE
- Germany
- Prior art keywords
- light emitting
- emitting device
- light
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25892294A JP2795195B2 (ja) | 1994-09-28 | 1994-09-28 | 発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69514304D1 true DE69514304D1 (de) | 2000-02-10 |
DE69514304T2 DE69514304T2 (de) | 2000-07-27 |
Family
ID=17326908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69514304T Expired - Fee Related DE69514304T2 (de) | 1994-09-28 | 1995-09-18 | Lichtemittierende Vorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5808324A (de) |
EP (1) | EP0704914B1 (de) |
JP (1) | JP2795195B2 (de) |
DE (1) | DE69514304T2 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW319916B (de) * | 1995-06-05 | 1997-11-11 | Hewlett Packard Co | |
JP3698402B2 (ja) | 1998-11-30 | 2005-09-21 | シャープ株式会社 | 発光ダイオード |
US6335547B1 (en) * | 1999-04-27 | 2002-01-01 | Showa Denko K.K. | Epitaxial wafer for infrared light-emitting device and light-emitting device using the same |
JP2001274456A (ja) * | 2000-01-18 | 2001-10-05 | Sharp Corp | 発光ダイオード |
TW200302511A (en) * | 2002-01-28 | 2003-08-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
US8304784B2 (en) | 2009-02-24 | 2012-11-06 | Andrew Locke | Illumination device |
JP6943114B2 (ja) * | 2017-09-26 | 2021-09-29 | 沖電気工業株式会社 | 発光サイリスタ、光プリントヘッド、及び画像形成装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6086879A (ja) * | 1983-10-19 | 1985-05-16 | Sumitomo Electric Ind Ltd | 半導体発光素子の製造方法 |
US5172195A (en) * | 1990-04-18 | 1992-12-15 | Kabushiki Kaisha Toshiba | Double heterostructure GaAlAs 610-640 nm LED |
JP2653562B2 (ja) * | 1991-02-05 | 1997-09-17 | 三菱電機株式会社 | 半導体レーザおよびその製造方法 |
US5264397A (en) * | 1991-02-15 | 1993-11-23 | The Whitaker Corporation | Method for activating zinc in semiconductor devices |
DE69207069T2 (de) * | 1991-05-31 | 1996-05-15 | Shinetsu Handotai Kk | Lichtemittierende Halbleitervorrichtung |
-
1994
- 1994-09-28 JP JP25892294A patent/JP2795195B2/ja not_active Expired - Fee Related
-
1995
- 1995-09-13 US US08/527,611 patent/US5808324A/en not_active Expired - Fee Related
- 1995-09-18 DE DE69514304T patent/DE69514304T2/de not_active Expired - Fee Related
- 1995-09-18 EP EP95306555A patent/EP0704914B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2795195B2 (ja) | 1998-09-10 |
DE69514304T2 (de) | 2000-07-27 |
EP0704914A1 (de) | 1996-04-03 |
JPH0897466A (ja) | 1996-04-12 |
US5808324A (en) | 1998-09-15 |
EP0704914B1 (de) | 2000-01-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |