DE69503633T2 - Verfahren und vorrichtung für das kristallwachstum - Google Patents

Verfahren und vorrichtung für das kristallwachstum

Info

Publication number
DE69503633T2
DE69503633T2 DE69503633T DE69503633T DE69503633T2 DE 69503633 T2 DE69503633 T2 DE 69503633T2 DE 69503633 T DE69503633 T DE 69503633T DE 69503633 T DE69503633 T DE 69503633T DE 69503633 T2 DE69503633 T2 DE 69503633T2
Authority
DE
Germany
Prior art keywords
crystal growth
growth
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69503633T
Other languages
English (en)
Other versions
DE69503633D1 (de
Inventor
John Alfred Beswick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Application granted granted Critical
Publication of DE69503633D1 publication Critical patent/DE69503633D1/de
Publication of DE69503633T2 publication Critical patent/DE69503633T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69503633T 1994-06-23 1995-06-06 Verfahren und vorrichtung für das kristallwachstum Expired - Fee Related DE69503633T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9412629A GB9412629D0 (en) 1994-06-23 1994-06-23 Improvements in crystal growth
PCT/GB1995/001305 WO1996000317A1 (en) 1994-06-23 1995-06-06 Improvements in crystal growth

Publications (2)

Publication Number Publication Date
DE69503633D1 DE69503633D1 (de) 1998-08-27
DE69503633T2 true DE69503633T2 (de) 1998-12-24

Family

ID=10757218

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69503633T Expired - Fee Related DE69503633T2 (de) 1994-06-23 1995-06-06 Verfahren und vorrichtung für das kristallwachstum

Country Status (8)

Country Link
US (1) US5879449A (de)
EP (1) EP0765406B1 (de)
JP (1) JPH10502046A (de)
CN (2) CN1047810C (de)
DE (1) DE69503633T2 (de)
GB (1) GB9412629D0 (de)
TW (1) TW340879B (de)
WO (1) WO1996000317A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3596226B2 (ja) * 1997-03-17 2004-12-02 信越半導体株式会社 単結晶保持装置
JP4052753B2 (ja) * 1999-02-24 2008-02-27 株式会社スーパーシリコン研究所 単結晶成長装置及び単結晶成長方法
US20020098307A1 (en) * 2000-10-09 2002-07-25 Schwartz Robert S. Material useable for medical balloons and catheters
JP3617466B2 (ja) * 2001-03-16 2005-02-02 三菱住友シリコン株式会社 単結晶引上げ装置
JP4252300B2 (ja) * 2002-12-18 2009-04-08 日鉱金属株式会社 化合物半導体単結晶の製造方法および結晶成長装置
BRPI0409603A (pt) * 2003-04-23 2006-04-18 Stella Chemifa Corp equipamento para a produção de cristais de compostos fluorados, cadinho e método de produção de monocristais de compostos fluorados
TWI298752B (en) * 2004-08-02 2008-07-11 Univ Nat Taiwan Method and apparatus for forming long single crystals with good uniformity
WO2006028868A2 (en) 2004-09-01 2006-03-16 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
WO2006068062A1 (ja) * 2004-12-22 2006-06-29 Tokuyama Corporation フッ化金属単結晶体の引上げ装置および該装置を用いたフッ化金属単結晶体の製造方法
CN102586858A (zh) * 2012-04-01 2012-07-18 北京华进创威电子有限公司 一种双坩埚感应加热物理气相传输生长单晶的装置
US9863062B2 (en) * 2013-03-14 2018-01-09 Corner Star Limited Czochralski crucible for controlling oxygen and related methods

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
US4454096A (en) * 1981-06-15 1984-06-12 Siltec Corporation Crystal growth furnace recharge
DE3316547C2 (de) * 1983-05-06 1985-05-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Kalter Tiegel für das Erschmelzen nichtmetallischer anorganischer Verbindungen
EP0173764B1 (de) * 1984-08-31 1989-12-13 Gakei Electric Works Co., Ltd. Verfahren und Vorrichtung zur Herstellung von Einkristallen
JPS62128999A (ja) * 1985-11-25 1987-06-11 Sumitomo Electric Ind Ltd ２重るつぼを用いた単結晶引上方法及び２重るつぼ
JP2656038B2 (ja) * 1987-06-15 1997-09-24 三井鉱山株式会社 融液からの単結晶育成方法
JPH02107587A (ja) * 1988-10-13 1990-04-19 Mitsubishi Metal Corp 半導体単結晶育成装置
JPH02160690A (ja) * 1988-12-14 1990-06-20 Sumitomo Electric Ind Ltd 単結晶の製造装置
US5047112A (en) * 1990-08-14 1991-09-10 The United States Of America As Represented By The United States Department Of Energy Method for preparing homogeneous single crystal ternary III-V alloys
EP0509312B1 (de) * 1991-04-16 1995-08-23 Sumitomo Electric Industries, Limited Czochralsky-Verfahren unter Verwendung eines Bauelementes zum Abschirmen der Strahlung der Rohmaterial-Schmelzlösung und Vorrichtung hierfür
JP3077273B2 (ja) * 1991-07-30 2000-08-14 三菱マテリアル株式会社 単結晶引上装置

Also Published As

Publication number Publication date
GB9412629D0 (en) 1994-08-10
CN1156484A (zh) 1997-08-06
EP0765406B1 (de) 1998-07-22
CN1235211A (zh) 1999-11-17
JPH10502046A (ja) 1998-02-24
TW340879B (en) 1998-09-21
CN1047810C (zh) 1999-12-29
EP0765406A1 (de) 1997-04-02
WO1996000317A1 (en) 1996-01-04
US5879449A (en) 1999-03-09
DE69503633D1 (de) 1998-08-27

Similar Documents

Publication Publication Date Title
DE69521969D1 (de) Verfahren und Vorrichtung zur Lichtbogen unterstützten CVD
DE69528174D1 (de) Zugeordnete verfahren und vorrichtung für emissionsmammographie
DE69535165D1 (de) Verfahren und Vorrichtung zur Bohrlochuntersuchung
DE69429799T2 (de) Verfahren und einrichtung für mikrobische reduktion
DE69518186T2 (de) Vorrichtung und Verfahren für Funkübertragung
DE69736469D1 (de) Vorrichtung und verfahren für funksender
DE69533246D1 (de) Verfahren und Vorrichtung für automatische Frequenzregelung
DE69532091D1 (de) Verfahren und Vorrichtung zur Durchführung von Messungen
DE59510184D1 (de) Einrichtung und verfahren zur hautuntersuchung
DE69328522T2 (de) Verfahren und Vorrichtung zur Benutzung von Browsern für Sammlungen
DE69623837T2 (de) Verfahren und Vorrichtung zur Einkristallzüchtung
DE19580737T1 (de) Verfahren und Vorrichtung zur Herstellung von Verbindungs-Einkristallen
DE69934822D1 (de) Vorrichtung und verfahren für das ausrichten
DE69529567T2 (de) Einrichtung und verfahren zur kommunikation
DE69520860D1 (de) Regenerationsverfahren und vorrichtung für aufzeichnungsblättern
DE69401932D1 (de) Verfahren zum behandeln von tabak und vorrichtung für das verfahren
DE69724886D1 (de) Verfahren und Vorrichtung zum Kristallziehen
DE69532631D1 (de) Einrichtung und verfahren zur datenausgabe
DE69619513T2 (de) Verfahren und vorrichtung zum züchten von einkristallen
DE700185T1 (de) Verfahren und Vorrichtung für datengesteuertes Verschlüsselungssystem
DE69410262D1 (de) Verfahren und Vorrichtung für Hochgeschwindigkeitsbildaufnahme
DE69526314T2 (de) Verfahren und Vorrichtung für serielle Übertragung
DE69511469D1 (de) Verfahren und Vorrichtung zur Herstellung von Diamanten
DE69503633T2 (de) Verfahren und vorrichtung für das kristallwachstum
DE69700740T2 (de) Verfahren und Vorrichtung zur Kristallziehung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: QINETIQ LTD., LONDON, GB

8339 Ceased/non-payment of the annual fee