TW340879B - Improved apparatus and process for growing crystals - Google Patents

Improved apparatus and process for growing crystals

Info

Publication number
TW340879B
TW340879B TW084100434A TW84100434A TW340879B TW 340879 B TW340879 B TW 340879B TW 084100434 A TW084100434 A TW 084100434A TW 84100434 A TW84100434 A TW 84100434A TW 340879 B TW340879 B TW 340879B
Authority
TW
Taiwan
Prior art keywords
crucible
melt
growing crystals
improved apparatus
contact
Prior art date
Application number
TW084100434A
Other languages
English (en)
Inventor
Alfrod Beswick John
Original Assignee
J Russell Dr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by J Russell Dr filed Critical J Russell Dr
Application granted granted Critical
Publication of TW340879B publication Critical patent/TW340879B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
TW084100434A 1994-06-23 1995-04-07 Improved apparatus and process for growing crystals TW340879B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9412629A GB9412629D0 (en) 1994-06-23 1994-06-23 Improvements in crystal growth

Publications (1)

Publication Number Publication Date
TW340879B true TW340879B (en) 1998-09-21

Family

ID=10757218

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084100434A TW340879B (en) 1994-06-23 1995-04-07 Improved apparatus and process for growing crystals

Country Status (8)

Country Link
US (1) US5879449A (zh)
EP (1) EP0765406B1 (zh)
JP (1) JPH10502046A (zh)
CN (2) CN1047810C (zh)
DE (1) DE69503633T2 (zh)
GB (1) GB9412629D0 (zh)
TW (1) TW340879B (zh)
WO (1) WO1996000317A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3596226B2 (ja) * 1997-03-17 2004-12-02 信越半導体株式会社 単結晶保持装置
JP4052753B2 (ja) * 1999-02-24 2008-02-27 株式会社スーパーシリコン研究所 単結晶成長装置及び単結晶成長方法
US20020098307A1 (en) * 2000-10-09 2002-07-25 Schwartz Robert S. Material useable for medical balloons and catheters
JP3617466B2 (ja) * 2001-03-16 2005-02-02 三菱住友シリコン株式会社 単結晶引上げ装置
JP4252300B2 (ja) * 2002-12-18 2009-04-08 日鉱金属株式会社 化合物半導体単結晶の製造方法および結晶成長装置
BRPI0409603A (pt) * 2003-04-23 2006-04-18 Stella Chemifa Corp equipamento para a produção de cristais de compostos fluorados, cadinho e método de produção de monocristais de compostos fluorados
TWI298752B (en) * 2004-08-02 2008-07-11 Univ Nat Taiwan Method and apparatus for forming long single crystals with good uniformity
WO2006028868A2 (en) 2004-09-01 2006-03-16 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
WO2006068062A1 (ja) * 2004-12-22 2006-06-29 Tokuyama Corporation フッ化金属単結晶体の引上げ装置および該装置を用いたフッ化金属単結晶体の製造方法
CN102586858A (zh) * 2012-04-01 2012-07-18 北京华进创威电子有限公司 一种双坩埚感应加热物理气相传输生长单晶的装置
US9863062B2 (en) * 2013-03-14 2018-01-09 Corner Star Limited Czochralski crucible for controlling oxygen and related methods

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
US4454096A (en) * 1981-06-15 1984-06-12 Siltec Corporation Crystal growth furnace recharge
DE3316547C2 (de) * 1983-05-06 1985-05-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Kalter Tiegel für das Erschmelzen nichtmetallischer anorganischer Verbindungen
EP0173764B1 (en) * 1984-08-31 1989-12-13 Gakei Electric Works Co., Ltd. Single crystal growing method and apparatus
JPS62128999A (ja) * 1985-11-25 1987-06-11 Sumitomo Electric Ind Ltd ２重るつぼを用いた単結晶引上方法及び２重るつぼ
JP2656038B2 (ja) * 1987-06-15 1997-09-24 三井鉱山株式会社 融液からの単結晶育成方法
JPH02107587A (ja) * 1988-10-13 1990-04-19 Mitsubishi Metal Corp 半導体単結晶育成装置
JPH02160690A (ja) * 1988-12-14 1990-06-20 Sumitomo Electric Ind Ltd 単結晶の製造装置
US5047112A (en) * 1990-08-14 1991-09-10 The United States Of America As Represented By The United States Department Of Energy Method for preparing homogeneous single crystal ternary III-V alloys
EP0509312B1 (en) * 1991-04-16 1995-08-23 Sumitomo Electric Industries, Limited Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor
JP3077273B2 (ja) * 1991-07-30 2000-08-14 三菱マテリアル株式会社 単結晶引上装置

Also Published As

Publication number Publication date
GB9412629D0 (en) 1994-08-10
CN1156484A (zh) 1997-08-06
EP0765406B1 (en) 1998-07-22
CN1235211A (zh) 1999-11-17
JPH10502046A (ja) 1998-02-24
CN1047810C (zh) 1999-12-29
EP0765406A1 (en) 1997-04-02
WO1996000317A1 (en) 1996-01-04
DE69503633T2 (de) 1998-12-24
US5879449A (en) 1999-03-09
DE69503633D1 (de) 1998-08-27

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