DE69501341T2 - Sulfoniumsalz und Resistzusammensetzung - Google Patents

Sulfoniumsalz und Resistzusammensetzung

Info

Publication number
DE69501341T2
DE69501341T2 DE69501341T DE69501341T DE69501341T2 DE 69501341 T2 DE69501341 T2 DE 69501341T2 DE 69501341 T DE69501341 T DE 69501341T DE 69501341 T DE69501341 T DE 69501341T DE 69501341 T2 DE69501341 T2 DE 69501341T2
Authority
DE
Germany
Prior art keywords
resist composition
sulfonium salt
sulfonium
salt
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69501341T
Other languages
English (en)
Other versions
DE69501341D1 (de
Inventor
Satoshi Watanabe
Junji Shimada
Youichi Ohsawa
Katsuya Takemura
Toshinobu Ishihara
Kazumasa Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Application granted granted Critical
Publication of DE69501341D1 publication Critical patent/DE69501341D1/de
Publication of DE69501341T2 publication Critical patent/DE69501341T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
    • C07C323/64—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton
    • C07C323/66—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton containing sulfur atoms of sulfo, esterified sulfo or halosulfonyl groups, bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
DE69501341T 1994-01-28 1995-01-25 Sulfoniumsalz und Resistzusammensetzung Expired - Lifetime DE69501341T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2617094 1994-01-28

Publications (2)

Publication Number Publication Date
DE69501341D1 DE69501341D1 (de) 1998-02-12
DE69501341T2 true DE69501341T2 (de) 1998-08-13

Family

ID=12186074

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69501341T Expired - Lifetime DE69501341T2 (de) 1994-01-28 1995-01-25 Sulfoniumsalz und Resistzusammensetzung

Country Status (5)

Country Link
US (1) US5569784A (de)
EP (1) EP0667338B1 (de)
KR (1) KR100230971B1 (de)
DE (1) DE69501341T2 (de)
TW (1) TW482942B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW436663B (en) * 1995-11-02 2001-05-28 Shinetsu Chemical Co Sulfonium salts and chemically amplified positive resist compositions
TW477913B (en) * 1995-11-02 2002-03-01 Shinetsu Chemical Co Sulfonium salts and chemically amplified positive resist compositions
JP3760957B2 (ja) * 1996-03-05 2006-03-29 信越化学工業株式会社 新規スルホニウム塩及び化学増幅ポジ型レジスト材料
JP3587325B2 (ja) * 1996-03-08 2004-11-10 富士写真フイルム株式会社 ポジ型感光性組成物
EP0837367B1 (de) * 1996-10-16 2002-04-10 Sumitomo Chemical Company Limited Eine Dipyridylverbindung enthaltender positiver Photolack
US5939236A (en) 1997-02-07 1999-08-17 Shipley Company, L.L.C. Antireflective coating compositions comprising photoacid generators
US6410209B1 (en) 1998-09-15 2002-06-25 Shipley Company, L.L.C. Methods utilizing antireflective coating compositions with exposure under 200 nm
US6815143B2 (en) 2001-01-22 2004-11-09 Shin-Etsu Chemical Co., Ltd. Resist material and pattern forming method
JP2003107707A (ja) * 2001-09-28 2003-04-09 Clariant (Japan) Kk 化学増幅型ポジ型感放射線性樹脂組成物
US6841333B2 (en) * 2002-11-01 2005-01-11 3M Innovative Properties Company Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions
JP4222850B2 (ja) * 2003-02-10 2009-02-12 Ｓｐａｎｓｉｏｎ Ｊａｐａｎ株式会社 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法
US7122294B2 (en) * 2003-05-22 2006-10-17 3M Innovative Properties Company Photoacid generators with perfluorinated multifunctional anions
EP1676835B1 (de) * 2003-10-21 2014-12-10 Wako Pure Chemical Industries, Ltd. Verfahren zur herstellung von triarylsulfoniumsalzen
JP2009053688A (ja) * 2007-07-30 2009-03-12 Fujifilm Corp ポジ型レジスト組成物及びパターン形成方法
JP5570424B2 (ja) 2007-10-10 2014-08-13 ビーエーエスエフ ソシエタス・ヨーロピア スルホニウム塩開始剤
TW201137526A (en) * 2010-03-03 2011-11-01 Jsr Corp Radiation-sensitive resin composition, resist pattern forming method, and sulfonium compound
GB201218352D0 (en) * 2012-10-12 2012-11-28 Ucl Business Plc Compounds and their synthesis
WO2017078031A1 (ja) * 2015-11-05 2017-05-11 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、及び、電子デバイスの製造方法
US11009790B2 (en) 2016-07-28 2021-05-18 Samsung Electronics Co., Ltd. Photoacid generator and photoresist composition including the same
US10520813B2 (en) * 2016-12-15 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd Extreme ultraviolet photoresist with high-efficiency electron transfer
KR20210100797A (ko) 2020-02-06 2021-08-18 삼성전자주식회사 레지스트 조성물

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3924299A1 (de) * 1989-07-22 1991-01-31 Basf Ag Neue sulfoniumsalze und deren verwendung

Also Published As

Publication number Publication date
EP0667338A1 (de) 1995-08-16
EP0667338B1 (de) 1998-01-07
DE69501341D1 (de) 1998-02-12
KR950032112A (ko) 1995-12-20
TW482942B (en) 2002-04-11
US5569784A (en) 1996-10-29
KR100230971B1 (ko) 1999-11-15

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Legal Events

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