DE69418569D1 - Resistmateralien und entsprechende Verfahren - Google Patents
Resistmateralien und entsprechende VerfahrenInfo
- Publication number
- DE69418569D1 DE69418569D1 DE69418569T DE69418569T DE69418569D1 DE 69418569 D1 DE69418569 D1 DE 69418569D1 DE 69418569 T DE69418569 T DE 69418569T DE 69418569 T DE69418569 T DE 69418569T DE 69418569 D1 DE69418569 D1 DE 69418569D1
- Authority
- DE
- Germany
- Prior art keywords
- resist materials
- corresponding procedures
- procedures
- resist
- materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14870693A | 1993-11-08 | 1993-11-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69418569D1 true DE69418569D1 (de) | 1999-06-24 |
DE69418569T2 DE69418569T2 (de) | 1999-10-21 |
Family
ID=22526978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69418569T Expired - Fee Related DE69418569T2 (de) | 1993-11-08 | 1994-10-26 | Resistmateralien und entsprechende Verfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US5741629A (de) |
EP (1) | EP0652488B1 (de) |
JP (1) | JPH07181691A (de) |
CA (1) | CA2131507C (de) |
DE (1) | DE69418569T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0954437A (ja) * | 1995-06-05 | 1997-02-25 | Fuji Photo Film Co Ltd | 化学増幅型ポジレジスト組成物 |
KR19990036901A (ko) * | 1997-10-08 | 1999-05-25 | 카나가와 치히로 | 폴리스티렌계 고분자 화합물, 화학증폭 포지티브형 레지스트 재료 및 패턴 형성 방법 |
US5981143A (en) * | 1997-11-26 | 1999-11-09 | Trw Inc. | Chemically treated photoresist for withstanding ion bombarded processing |
US6103447A (en) | 1998-02-25 | 2000-08-15 | International Business Machines Corp. | Approach to formulating irradiation sensitive positive resists |
US6537736B1 (en) | 1999-03-12 | 2003-03-25 | Matsushita Electric Industrial Co., Ltd. | Patten formation method |
US6969569B2 (en) * | 1999-04-16 | 2005-11-29 | Applied Materials, Inc. | Method of extending the stability of a photoresist during direct writing of an image |
US6727047B2 (en) | 1999-04-16 | 2004-04-27 | Applied Materials, Inc. | Method of extending the stability of a photoresist during direct writing of an image upon the photoresist |
JP2019210274A (ja) | 2018-12-28 | 2019-12-12 | Jfeケミカル株式会社 | 3−アセトキシスチレンの製造方法 |
JP7407651B2 (ja) * | 2020-04-20 | 2024-01-04 | 東ソー・ファインケム株式会社 | 3-アセトキシスチレンの製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4808511A (en) * | 1987-05-19 | 1989-02-28 | International Business Machines Corporation | Vapor phase photoresist silylation process |
US4996136A (en) * | 1988-02-25 | 1991-02-26 | At&T Bell Laboratories | Radiation sensitive materials and devices made therewith |
EP0366590B2 (de) * | 1988-10-28 | 2001-03-21 | International Business Machines Corporation | Positiv arbeitende hochempfindliche Photolack-Zusammensetzung |
EP0524759A1 (de) * | 1991-07-23 | 1993-01-27 | AT&T Corp. | Verfahren zur Herstellung einer Vorrichtung |
-
1994
- 1994-09-06 CA CA002131507A patent/CA2131507C/en not_active Expired - Fee Related
- 1994-10-26 DE DE69418569T patent/DE69418569T2/de not_active Expired - Fee Related
- 1994-10-26 EP EP94307857A patent/EP0652488B1/de not_active Expired - Lifetime
- 1994-11-07 JP JP6296035A patent/JPH07181691A/ja active Pending
-
1996
- 1996-10-15 US US08/730,560 patent/US5741629A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CA2131507A1 (en) | 1995-05-09 |
EP0652488B1 (de) | 1999-05-19 |
JPH07181691A (ja) | 1995-07-21 |
EP0652488A2 (de) | 1995-05-10 |
DE69418569T2 (de) | 1999-10-21 |
CA2131507C (en) | 1999-11-02 |
US5741629A (en) | 1998-04-21 |
EP0652488A3 (de) | 1995-08-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |