DE69426903T2 - Abfühlungsschema eines ferroelektrischen RAM-Speichers, der eine kapazitive Bitleitungsisolierung enthält - Google Patents

Abfühlungsschema eines ferroelektrischen RAM-Speichers, der eine kapazitive Bitleitungsisolierung enthält

Info

Publication number
DE69426903T2
DE69426903T2 DE69426903T DE69426903T DE69426903T2 DE 69426903 T2 DE69426903 T2 DE 69426903T2 DE 69426903 T DE69426903 T DE 69426903T DE 69426903 T DE69426903 T DE 69426903T DE 69426903 T2 DE69426903 T2 DE 69426903T2
Authority
DE
Germany
Prior art keywords
bit line
ram memory
ferroelectric ram
line isolation
sensing scheme
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69426903T
Other languages
English (en)
Other versions
DE69426903D1 (de
Inventor
Wen Foo Chern
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ramtron International Corp
Original Assignee
Ramtron International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ramtron International Corp filed Critical Ramtron International Corp
Application granted granted Critical
Publication of DE69426903D1 publication Critical patent/DE69426903D1/de
Publication of DE69426903T2 publication Critical patent/DE69426903T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
DE69426903T 1993-06-24 1994-04-13 Abfühlungsschema eines ferroelektrischen RAM-Speichers, der eine kapazitive Bitleitungsisolierung enthält Expired - Fee Related DE69426903T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/083,883 US5381364A (en) 1993-06-24 1993-06-24 Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation

Publications (2)

Publication Number Publication Date
DE69426903D1 DE69426903D1 (de) 2001-04-26
DE69426903T2 true DE69426903T2 (de) 2001-11-15

Family

ID=22181275

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69426903T Expired - Fee Related DE69426903T2 (de) 1993-06-24 1994-04-13 Abfühlungsschema eines ferroelektrischen RAM-Speichers, der eine kapazitive Bitleitungsisolierung enthält

Country Status (4)

Country Link
US (1) US5381364A (de)
EP (1) EP0631287B1 (de)
JP (1) JPH07147094A (de)
DE (1) DE69426903T2 (de)

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US6242299B1 (en) 1999-04-01 2001-06-05 Ramtron International Corporation Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode
US6201730B1 (en) * 1999-06-01 2001-03-13 Infineon Technologies North America Corp. Sensing of memory cell via a plateline
JP4421009B2 (ja) * 1999-06-02 2010-02-24 株式会社東芝 強誘電体メモリ
US6147895A (en) * 1999-06-04 2000-11-14 Celis Semiconductor Corporation Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same
DE19952311B4 (de) * 1999-10-29 2006-07-13 Infineon Technologies Ag Integrierter Speicher mit Speicherzellen vom 2-Transistor/2-Kondensator-Typ
US6418044B1 (en) 2000-12-28 2002-07-09 Stmicroelectronics, Inc. Method and circuit for determining sense amplifier sensitivity
KR100463602B1 (ko) * 2001-12-29 2004-12-29 주식회사 하이닉스반도체 불휘발성 강유전체 메모리의 배선
US6587367B1 (en) * 2002-03-19 2003-07-01 Texas Instruments Incorporated Dummy cell structure for 1T1C FeRAM cell array
JP3650077B2 (ja) * 2002-03-29 2005-05-18 沖電気工業株式会社 半導体記憶装置
US6920060B2 (en) * 2002-08-14 2005-07-19 Intel Corporation Memory device, circuits and methods for operating a memory device
JP2008217937A (ja) * 2007-03-06 2008-09-18 Toshiba Corp 強誘電体記憶装置及びその制御方法
JP5162276B2 (ja) * 2008-02-28 2013-03-13 ローム株式会社 強誘電体メモリ装置
US8014218B2 (en) * 2008-12-24 2011-09-06 International Business Machines Corporation Capacitively isolated mismatch compensated sense amplifier
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US20120008445A1 (en) * 2010-07-12 2012-01-12 Promos Technologies Pte.Ltd. Dual bit line precharge architecture and method for low power dynamic random access memory (dram) integrated circuit devices and devices incorporating embedded dram
JP2016081549A (ja) 2014-10-17 2016-05-16 ローム株式会社 半導体記憶装置
US10049713B2 (en) 2016-08-24 2018-08-14 Micron Technology, Inc. Full bias sensing in a memory array
SG11201901211XA (en) 2016-08-31 2019-03-28 Micron Technology Inc Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
EP3507805A4 (de) 2016-08-31 2020-06-03 Micron Technology, Inc. Vorrichtungen und verfahren mit ferroelektrischem speicher und zum betrieb von ferroelektrischem speicher
WO2018044510A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including two transistor-one capacitor memory and for accessing same
WO2018044485A1 (en) * 2016-08-31 2018-03-08 Micron Technology, Inc. Ferroelectric memory cells
US10153020B1 (en) * 2017-06-09 2018-12-11 Micron Technology, Inc. Dual mode ferroelectric memory cell operation
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
US10679687B2 (en) 2017-08-22 2020-06-09 Micron Technology, Inc. Memory cells and arrays of memory cells
US11476261B2 (en) 2019-02-27 2022-10-18 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US11696451B1 (en) 2021-11-01 2023-07-04 Kepler Computing Inc. Common mode compensation for non-linear polar material based 1T1C memory bit-cell
US11482270B1 (en) 2021-11-17 2022-10-25 Kepler Computing Inc. Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic
US11997853B1 (en) 2022-03-07 2024-05-28 Kepler Computing Inc. 1TnC memory bit-cell having stacked and folded planar capacitors with lateral offset

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US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
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Also Published As

Publication number Publication date
EP0631287B1 (de) 2001-03-21
EP0631287A2 (de) 1994-12-28
JPH07147094A (ja) 1995-06-06
US5381364A (en) 1995-01-10
EP0631287A3 (de) 1997-04-23
DE69426903D1 (de) 2001-04-26

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee