DE69422786T2 - Dynamischer Speicher mit einer Massensteuerschaltung - Google Patents

Dynamischer Speicher mit einer Massensteuerschaltung

Info

Publication number
DE69422786T2
DE69422786T2 DE69422786T DE69422786T DE69422786T2 DE 69422786 T2 DE69422786 T2 DE 69422786T2 DE 69422786 T DE69422786 T DE 69422786T DE 69422786 T DE69422786 T DE 69422786T DE 69422786 T2 DE69422786 T2 DE 69422786T2
Authority
DE
Germany
Prior art keywords
control circuit
dynamic memory
mass control
mass
dynamic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69422786T
Other languages
English (en)
Other versions
DE69422786D1 (de
Inventor
Hiroki Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69422786D1 publication Critical patent/DE69422786D1/de
Application granted granted Critical
Publication of DE69422786T2 publication Critical patent/DE69422786T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4096Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
DE69422786T 1993-11-18 1994-11-18 Dynamischer Speicher mit einer Massensteuerschaltung Expired - Fee Related DE69422786T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5288930A JP2551360B2 (ja) 1993-11-18 1993-11-18 ダイナミックメモリ

Publications (2)

Publication Number Publication Date
DE69422786D1 DE69422786D1 (de) 2000-03-02
DE69422786T2 true DE69422786T2 (de) 2000-08-31

Family

ID=17736653

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69422786T Expired - Fee Related DE69422786T2 (de) 1993-11-18 1994-11-18 Dynamischer Speicher mit einer Massensteuerschaltung

Country Status (5)

Country Link
US (1) US5495443A (de)
EP (1) EP0654789B1 (de)
JP (1) JP2551360B2 (de)
KR (1) KR0148169B1 (de)
DE (1) DE69422786T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08147965A (ja) * 1994-11-15 1996-06-07 Toshiba Corp 半導体記憶装置
JP3277192B2 (ja) * 1996-12-27 2002-04-22 富士通株式会社 半導体装置
US5980262A (en) * 1997-06-02 1999-11-09 Mitac, Inc. Method and apparatus for generating musical accompaniment signals at a lower storage space requirement
US10740188B2 (en) * 2018-12-07 2020-08-11 Winbond Electronics Corp. Volatile memory device and method for efficient bulk data movement, backup operation in the volatile memory device
RU2759386C2 (ru) * 2019-12-04 2021-11-12 федеральное государственное казенное военное образовательное учреждение высшего образования "Краснодарское высшее военное орденов Жукова и Октябрьской Революции Краснознаменное училище имени генерала армии С.М. Штеменко" Министерства обороны Российской Федерации Устройство для контроля цепи заземления технических средств обработки информации

Also Published As

Publication number Publication date
EP0654789A2 (de) 1995-05-24
KR950015392A (ko) 1995-06-16
EP0654789B1 (de) 2000-01-26
DE69422786D1 (de) 2000-03-02
EP0654789A3 (de) 1995-08-30
US5495443A (en) 1996-02-27
JP2551360B2 (ja) 1996-11-06
KR0148169B1 (ko) 1998-11-02
JPH07141857A (ja) 1995-06-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee