DE69421033T2 - RF induktive Plasmaquelle zur Plasmabehandlung - Google Patents

RF induktive Plasmaquelle zur Plasmabehandlung

Info

Publication number
DE69421033T2
DE69421033T2 DE69421033T DE69421033T DE69421033T2 DE 69421033 T2 DE69421033 T2 DE 69421033T2 DE 69421033 T DE69421033 T DE 69421033T DE 69421033 T DE69421033 T DE 69421033T DE 69421033 T2 DE69421033 T2 DE 69421033T2
Authority
DE
Germany
Prior art keywords
plasma
inductive
source
treatment
plasma treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69421033T
Other languages
English (en)
Other versions
DE69421033D1 (de
Inventor
Ajit P Paranjpe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69421033D1 publication Critical patent/DE69421033D1/de
Publication of DE69421033T2 publication Critical patent/DE69421033T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Electron Sources, Ion Sources (AREA)
DE69421033T 1993-07-30 1994-07-29 RF induktive Plasmaquelle zur Plasmabehandlung Expired - Fee Related DE69421033T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/100,501 US5430355A (en) 1993-07-30 1993-07-30 RF induction plasma source for plasma processing

Publications (2)

Publication Number Publication Date
DE69421033D1 DE69421033D1 (de) 1999-11-11
DE69421033T2 true DE69421033T2 (de) 2000-05-31

Family

ID=22280081

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69421033T Expired - Fee Related DE69421033T2 (de) 1993-07-30 1994-07-29 RF induktive Plasmaquelle zur Plasmabehandlung

Country Status (6)

Country Link
US (1) US5430355A (de)
EP (1) EP0648069B1 (de)
JP (2) JP3837171B2 (de)
KR (1) KR100340164B1 (de)
DE (1) DE69421033T2 (de)
TW (1) TW327267B (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009018912A1 (de) 2009-04-28 2010-11-18 Leybold Optics Gmbh Verfahren zur Erzeugung eines Plasmastrahls sowie Plasmaquelle
US8698400B2 (en) 2009-04-28 2014-04-15 Leybold Optics Gmbh Method for producing a plasma beam and plasma source
WO2016156496A1 (de) 2015-03-31 2016-10-06 Bühler Alzenau Gmbh Verfahren zur herstellung von beschichteten substraten

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US6190513B1 (en) 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
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US6652717B1 (en) 1997-05-16 2003-11-25 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
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US6077402A (en) * 1997-05-16 2000-06-20 Applied Materials, Inc. Central coil design for ionized metal plasma deposition
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US7166816B1 (en) * 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US7569790B2 (en) * 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
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US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
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EP1034566A1 (de) * 1997-11-26 2000-09-13 Applied Materials, Inc. Zerstörungsfreie beschichtungsmethode
US7253109B2 (en) * 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US20050272254A1 (en) * 1997-11-26 2005-12-08 Applied Materials, Inc. Method of depositing low resistivity barrier layers for copper interconnects
US6280579B1 (en) 1997-12-19 2001-08-28 Applied Materials, Inc. Target misalignment detector
US6506287B1 (en) 1998-03-16 2003-01-14 Applied Materials, Inc. Overlap design of one-turn coil
US6155199A (en) * 1998-03-31 2000-12-05 Lam Research Corporation Parallel-antenna transformer-coupled plasma generation system
US6254738B1 (en) 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
US6660134B1 (en) 1998-07-10 2003-12-09 Applied Materials, Inc. Feedthrough overlap coil
TW434636B (en) 1998-07-13 2001-05-16 Applied Komatsu Technology Inc RF matching network with distributed outputs
US6132566A (en) * 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma
US6231725B1 (en) 1998-08-04 2001-05-15 Applied Materials, Inc. Apparatus for sputtering material onto a workpiece with the aid of a plasma
JP2000099922A (ja) * 1998-09-17 2000-04-07 Sony Corp 磁気トンネル素子及びその製造方法
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
JP3608416B2 (ja) * 1999-02-02 2005-01-12 日新電機株式会社 プラズマ源
US6217718B1 (en) 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
KR100318690B1 (ko) * 1999-03-19 2001-12-28 염근영 자장강화된 유도결합형 플라즈마장치
US6474258B2 (en) 1999-03-26 2002-11-05 Tokyo Electron Limited Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
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JP2003514388A (ja) * 1999-11-15 2003-04-15 ラム リサーチ コーポレーション 処理システム用の材料およびガス化学剤
US6320320B1 (en) * 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
US6494998B1 (en) 2000-08-30 2002-12-17 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
US6660177B2 (en) * 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
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US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US7304263B2 (en) * 2003-08-14 2007-12-04 Rapt Industries, Inc. Systems and methods utilizing an aperture with a reactive atom plasma torch
US7297892B2 (en) * 2003-08-14 2007-11-20 Rapt Industries, Inc. Systems and methods for laser-assisted plasma processing
JP4671361B2 (ja) 2004-03-26 2011-04-13 日新電機株式会社 プラズマ発生装置
JP2007220600A (ja) * 2006-02-20 2007-08-30 Nissin Electric Co Ltd プラズマ生成方法及びプラズマ生成装置並びにプラズマ処理装置
US8593064B2 (en) * 2007-02-16 2013-11-26 Ad Astra Rocket Company Plasma source improved with an RF coupling system
US7972471B2 (en) * 2007-06-29 2011-07-05 Lam Research Corporation Inductively coupled dual zone processing chamber with single planar antenna
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WO2011139128A2 (ko) * 2010-05-07 2011-11-10 나노세미콘(주) 웨이퍼 처리를 위한 다중 플라즈마 발생 장치
KR101101364B1 (ko) 2010-05-07 2012-01-02 유정호 웨이퍼 처리를 위한 다중 플라즈마 발생 장치
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US10249479B2 (en) * 2015-01-30 2019-04-02 Applied Materials, Inc. Magnet configurations for radial uniformity tuning of ICP plasmas
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009018912A1 (de) 2009-04-28 2010-11-18 Leybold Optics Gmbh Verfahren zur Erzeugung eines Plasmastrahls sowie Plasmaquelle
US8698400B2 (en) 2009-04-28 2014-04-15 Leybold Optics Gmbh Method for producing a plasma beam and plasma source
WO2016156496A1 (de) 2015-03-31 2016-10-06 Bühler Alzenau Gmbh Verfahren zur herstellung von beschichteten substraten
US11814718B2 (en) 2015-03-31 2023-11-14 Bühler Alzenau Gmbh Method for producing coated substrates

Also Published As

Publication number Publication date
JP3837171B2 (ja) 2006-10-25
KR950005121A (ko) 1995-02-18
EP0648069B1 (de) 1999-10-06
JP3987545B2 (ja) 2007-10-10
TW327267B (en) 1998-02-21
DE69421033D1 (de) 1999-11-11
EP0648069A1 (de) 1995-04-12
JPH088095A (ja) 1996-01-12
KR100340164B1 (ko) 2002-11-27
JP2005244255A (ja) 2005-09-08
US5430355A (en) 1995-07-04

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee