DE69416534D1 - Vorrichtung und verfahren zur gasreaktantabgabe - Google Patents
Vorrichtung und verfahren zur gasreaktantabgabeInfo
- Publication number
- DE69416534D1 DE69416534D1 DE69416534T DE69416534T DE69416534D1 DE 69416534 D1 DE69416534 D1 DE 69416534D1 DE 69416534 T DE69416534 T DE 69416534T DE 69416534 T DE69416534 T DE 69416534T DE 69416534 D1 DE69416534 D1 DE 69416534D1
- Authority
- DE
- Germany
- Prior art keywords
- gas reactant
- reactant delivery
- delivery
- gas
- reactant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/241,184 US5451258A (en) | 1994-05-11 | 1994-05-11 | Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber |
PCT/US1994/013743 WO1995031583A1 (en) | 1994-05-11 | 1994-11-29 | Apparatus and method for delivery of reactant gases |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69416534D1 true DE69416534D1 (de) | 1999-03-25 |
Family
ID=22909610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69416534T Expired - Lifetime DE69416534D1 (de) | 1994-05-11 | 1994-11-29 | Vorrichtung und verfahren zur gasreaktantabgabe |
Country Status (8)
Country | Link |
---|---|
US (1) | US5451258A (de) |
EP (1) | EP0760022B1 (de) |
JP (1) | JP3398751B2 (de) |
AU (1) | AU1332595A (de) |
CA (1) | CA2189559A1 (de) |
DE (1) | DE69416534D1 (de) |
TW (1) | TW306969B (de) |
WO (1) | WO1995031583A1 (de) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5832177A (en) * | 1990-10-05 | 1998-11-03 | Fujitsu Limited | Method for controlling apparatus for supplying steam for ashing process |
FR2695944B1 (fr) * | 1992-09-24 | 1994-11-18 | Onera (Off Nat Aerospatiale) | Appareil de dépôt chimique en phase vapeur activé par un plasma micro-ondes. |
US6291343B1 (en) | 1994-11-14 | 2001-09-18 | Applied Materials, Inc. | Plasma annealing of substrates to improve adhesion |
US5782980A (en) * | 1996-05-14 | 1998-07-21 | Advanced Micro Devices, Inc. | Low pressure chemical vapor deposition apparatus including a process gas heating subsystem |
US6244575B1 (en) | 1996-10-02 | 2001-06-12 | Micron Technology, Inc. | Method and apparatus for vaporizing liquid precursors and system for using same |
US6280793B1 (en) | 1996-11-20 | 2001-08-28 | Micron Technology, Inc. | Electrostatic method and apparatus for vaporizing precursors and system for using same |
US6076359A (en) * | 1996-11-25 | 2000-06-20 | American Air Liquide Inc. | System and method for controlled delivery of liquified gases |
US6083321A (en) * | 1997-07-11 | 2000-07-04 | Applied Materials, Inc. | Fluid delivery system and method |
US5966499A (en) * | 1997-07-28 | 1999-10-12 | Mks Instruments, Inc. | System for delivering a substantially constant vapor flow to a chemical process reactor |
US6039809A (en) * | 1998-01-27 | 2000-03-21 | Mitsubishi Materials Silicon Corporation | Method and apparatus for feeding a gas for epitaxial growth |
US6179277B1 (en) * | 1998-02-27 | 2001-01-30 | Applied Materials, Inc. | Liquid vaporizer systems and methods for their use |
US6663716B2 (en) | 1998-04-14 | 2003-12-16 | Cvd Systems, Inc. | Film processing system |
US6136725A (en) * | 1998-04-14 | 2000-10-24 | Cvd Systems, Inc. | Method for chemical vapor deposition of a material on a substrate |
US6296711B1 (en) | 1998-04-14 | 2001-10-02 | Cvd Systems, Inc. | Film processing system |
US20030101938A1 (en) * | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US6364954B2 (en) | 1998-12-14 | 2002-04-02 | Applied Materials, Inc. | High temperature chemical vapor deposition chamber |
US6206971B1 (en) | 1999-03-29 | 2001-03-27 | Applied Materials, Inc. | Integrated temperature controlled exhaust and cold trap assembly |
EP1205302B1 (de) * | 2000-05-22 | 2010-11-10 | Seiko Epson Corporation | Kopfelement und verfahren zur tintenabweisenden behandlung |
JP2003031050A (ja) * | 2001-07-16 | 2003-01-31 | Nec Corp | 水銀を含む銅酸化物超伝導体薄膜、その製造装置およびその製造方法 |
KR101040446B1 (ko) * | 2002-04-19 | 2011-06-09 | 맷슨 테크놀로지, 인크. | 저증기압 가스 전구체를 이용하여 기판 상에 막을증착하기 위한 시스템 |
US6936086B2 (en) * | 2002-09-11 | 2005-08-30 | Planar Systems, Inc. | High conductivity particle filter |
US20040170761A1 (en) * | 2003-02-27 | 2004-09-02 | Sharp Laboratories Of America, Inc. | Precursor solution and method for controlling the composition of MOCVD deposited PCMO |
WO2004105095A2 (en) * | 2003-05-16 | 2004-12-02 | Svt Associates Inc. | Thin-film deposition evaporator |
US20050000428A1 (en) * | 2003-05-16 | 2005-01-06 | Shero Eric J. | Method and apparatus for vaporizing and delivering reactant |
KR20050004379A (ko) * | 2003-07-02 | 2005-01-12 | 삼성전자주식회사 | 원자층 증착용 가스 공급 장치 |
US7390535B2 (en) | 2003-07-03 | 2008-06-24 | Aeromet Technologies, Inc. | Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings |
JP2005079141A (ja) * | 2003-08-28 | 2005-03-24 | Asm Japan Kk | プラズマcvd装置 |
US7727588B2 (en) * | 2003-09-05 | 2010-06-01 | Yield Engineering Systems, Inc. | Apparatus for the efficient coating of substrates |
EP1695038B1 (de) | 2003-12-12 | 2013-02-13 | Semequip, Inc. | Steuerung des flusses von aus feststoffen sublimierten dämpfen |
US20080073559A1 (en) * | 2003-12-12 | 2008-03-27 | Horsky Thomas N | Controlling the flow of vapors sublimated from solids |
JP5264039B2 (ja) * | 2004-08-10 | 2013-08-14 | 東京エレクトロン株式会社 | 薄膜形成装置及び薄膜形成方法 |
JP4845385B2 (ja) * | 2004-08-13 | 2011-12-28 | 東京エレクトロン株式会社 | 成膜装置 |
WO2009039382A1 (en) | 2007-09-21 | 2009-03-26 | Semequip. Inc. | Method for extending equipment uptime in ion implantation |
JP4880647B2 (ja) * | 2008-07-01 | 2012-02-22 | 東京エレクトロン株式会社 | 有機elの成膜装置および蒸着装置 |
EP2189358A1 (de) | 2008-11-20 | 2010-05-26 | Yen-Ho Lu | Handgriff mit integriertem Blinker |
US20100266765A1 (en) * | 2009-04-21 | 2010-10-21 | White Carl L | Method and apparatus for growing a thin film onto a substrate |
US9278048B2 (en) * | 2009-05-06 | 2016-03-08 | Baxter International, Inc. | Pharmaceutical product and method of use |
US9117773B2 (en) * | 2009-08-26 | 2015-08-25 | Asm America, Inc. | High concentration water pulses for atomic layer deposition |
KR101084275B1 (ko) * | 2009-09-22 | 2011-11-16 | 삼성모바일디스플레이주식회사 | 소스 가스 공급 유닛, 이를 구비하는 증착 장치 및 방법 |
WO2012071661A1 (en) * | 2010-11-30 | 2012-06-07 | Socpra Sciences Et Genie S.E.C. | Epitaxial deposition apparatus, gas injectors, and chemical vapor management system associated therewith |
EP2457670B1 (de) * | 2010-11-30 | 2017-06-21 | Oticon A/S | Verfahren und Vorrichtung zur plasmainduzierten Beschichtung bei niedrigem Druck |
KR101599343B1 (ko) | 2011-05-10 | 2016-03-03 | 가부시키가이샤 후지킨 | 유량 모니터 부착 압력식 유량 제어 장치 |
JP5755958B2 (ja) | 2011-07-08 | 2015-07-29 | 株式会社フジキン | 半導体製造装置の原料ガス供給装置 |
JP5652960B2 (ja) * | 2011-08-01 | 2015-01-14 | 株式会社フジキン | 原料気化供給装置 |
JP5647083B2 (ja) | 2011-09-06 | 2014-12-24 | 株式会社フジキン | 原料濃度検出機構を備えた原料気化供給装置 |
KR101879274B1 (ko) * | 2012-01-09 | 2018-08-20 | 삼성디스플레이 주식회사 | 저온 증착 장치 |
US9964332B2 (en) * | 2014-03-27 | 2018-05-08 | Lam Research Corporation | Systems and methods for bulk vaporization of precursor |
EP3162914A1 (de) * | 2015-11-02 | 2017-05-03 | IMEC vzw | Vorrichtung und verfahren zur bereitstellung eines gasförmigen vorläufers an eine reaktionskammer |
KR102122786B1 (ko) * | 2015-12-18 | 2020-06-26 | 가부시키가이샤 코쿠사이 엘렉트릭 | 저류 장치, 기화기, 기판 처리 장치 및 반도체 장치의 제조 방법 |
US11393703B2 (en) * | 2018-06-18 | 2022-07-19 | Applied Materials, Inc. | Apparatus and method for controlling a flow process material to a deposition chamber |
US11753715B2 (en) * | 2020-06-05 | 2023-09-12 | Applied Materials, Inc. | Apparatus and methods for controlling concentration of precursors to processing chamber |
WO2022025950A1 (en) * | 2020-07-28 | 2022-02-03 | Versum Materials Us, Llc | Systems having heated valve manifold assemblies, methods of manufacture of same |
CN117916864A (zh) * | 2021-09-09 | 2024-04-19 | 株式会社博迈立铖 | 气化器 |
JP2023173097A (ja) * | 2022-05-25 | 2023-12-07 | 東京エレクトロン株式会社 | 基板処理装置及び酸素混入抑制方法 |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3666553A (en) * | 1970-05-08 | 1972-05-30 | Bell Telephone Labor Inc | Method of growing compound semiconductor films on an amorphous substrate |
US4031851A (en) * | 1973-08-08 | 1977-06-28 | Camahort Jose L | Apparatus for producing improved high strength filaments |
GB1483966A (en) * | 1974-10-23 | 1977-08-24 | Sharp Kk | Vapourized-metal cluster ion source and ionized-cluster beam deposition |
US4089207A (en) * | 1975-12-20 | 1978-05-16 | The Bendix Corporation | Accessory for gas concentrator-gas chromatograph analyzer |
US4123034A (en) * | 1976-11-22 | 1978-10-31 | Bc Pausch, Inc. | Box form for concrete culvert |
US4167915A (en) * | 1977-03-09 | 1979-09-18 | Atomel Corporation | High-pressure, high-temperature gaseous chemical apparatus |
US4200784A (en) * | 1977-12-05 | 1980-04-29 | Westinghouse Electric Corp. | Hollow shaft bore heater assembly |
US4213034A (en) * | 1978-07-03 | 1980-07-15 | Thermon Manufacturing Company | Conduction heating assembly |
US4276243A (en) * | 1978-12-08 | 1981-06-30 | Western Electric Company, Inc. | Vapor delivery control system and method |
US4220460A (en) * | 1979-02-05 | 1980-09-02 | Western Electric Company, Inc. | Vapor delivery system and method |
US4256052A (en) * | 1979-10-02 | 1981-03-17 | Rca Corp. | Temperature gradient means in reactor tube of vapor deposition apparatus |
JPS5747738A (en) * | 1980-09-02 | 1982-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Feeding apparatus for starting material for glass |
US4395440A (en) * | 1980-10-09 | 1983-07-26 | Matsushita Electric Industrial Co., Ltd. | Method of and apparatus for manufacturing ultrafine particle film |
US4438153A (en) * | 1981-02-24 | 1984-03-20 | Welbilt Electronics Die Corporation | Method of and apparatus for the vapor deposition of material upon a substrate |
US4351805A (en) * | 1981-04-06 | 1982-09-28 | International Business Machines Corporation | Single gas flow elevated pressure reactor |
DE3116951C2 (de) * | 1981-04-29 | 1984-12-20 | Drägerwerk AG, 2400 Lübeck | Vorrichtung zur Beimischung flüssiger Narkosemittel in das dem Patienten zuzuführende Atemgas |
US4488506A (en) * | 1981-06-18 | 1984-12-18 | Itt Industries, Inc. | Metallization plant |
US4436674A (en) * | 1981-07-30 | 1984-03-13 | J.C. Schumacher Co. | Vapor mass flow control system |
EP0087798B1 (de) * | 1982-03-01 | 1987-05-06 | Toyota Jidosha Kabushiki Kaisha | Verfahren und Vorrichtung zur Herstellung einer feinpulvrigen Verbindung eines Metalls und eines anderen Elements |
JPS591671A (ja) * | 1982-05-28 | 1984-01-07 | Fujitsu Ltd | プラズマcvd装置 |
US4468283A (en) * | 1982-12-17 | 1984-08-28 | Irfan Ahmed | Method for etching and controlled chemical vapor deposition |
JPS59140365A (ja) * | 1983-02-01 | 1984-08-11 | Ushio Inc | 光化学蒸着装置 |
US4699082A (en) * | 1983-02-25 | 1987-10-13 | Liburdi Engineering Limited | Apparatus for chemical vapor deposition |
AU563417B2 (en) * | 1984-02-07 | 1987-07-09 | Nippon Telegraph & Telephone Public Corporation | Optical fibre manufacture |
US4582480A (en) * | 1984-08-02 | 1986-04-15 | At&T Technologies, Inc. | Methods of and apparatus for vapor delivery control in optical preform manufacture |
FR2569207B1 (fr) * | 1984-08-14 | 1986-11-14 | Mellet Robert | Procede et dispositif d'obtention d'un courant gazeux contenant un compose a l'etat de vapeur, utilisable notamment pour introduire ce compose dans un reacteur d'epitaxie |
US4619844A (en) * | 1985-01-22 | 1986-10-28 | Fairchild Camera Instrument Corp. | Method and apparatus for low pressure chemical vapor deposition |
JPS6291494A (ja) * | 1985-10-16 | 1987-04-25 | Res Dev Corp Of Japan | 化合物半導体単結晶成長方法及び装置 |
US4717596A (en) * | 1985-10-30 | 1988-01-05 | International Business Machines Corporation | Method for vacuum vapor deposition with improved mass flow control |
JPH0698292B2 (ja) * | 1986-07-03 | 1994-12-07 | 忠弘 大見 | 超高純度ガスの供給方法及び供給系 |
US4856457A (en) * | 1987-02-20 | 1989-08-15 | Hughes Aircraft Company | Cluster source for nonvolatile species, having independent temperature control |
US4911812A (en) * | 1987-10-21 | 1990-03-27 | Hitachi, Ltd. | Plasma treating method and apparatus therefor |
US4844006A (en) * | 1988-03-07 | 1989-07-04 | Akzo America Inc. | Apparatus to provide a vaporized reactant for chemical-vapor deposition |
US5186120A (en) * | 1989-03-22 | 1993-02-16 | Mitsubishi Denki Kabushiki Kaisha | Mixture thin film forming apparatus |
JP2888253B2 (ja) * | 1989-07-20 | 1999-05-10 | 富士通株式会社 | 化学気相成長法およびその実施のための装置 |
EP0419939B1 (de) * | 1989-09-12 | 1994-02-23 | Stec Inc. | Vorrichtung für die Verdampfung und Bereitstellung von Organometallverbindungen |
US5146869A (en) * | 1990-06-11 | 1992-09-15 | National Semiconductor Corporation | Tube and injector for preheating gases in a chemical vapor deposition reactor |
US5269847A (en) * | 1990-08-23 | 1993-12-14 | Applied Materials, Inc. | Variable rate distribution gas flow reaction chamber |
JPH04295089A (ja) * | 1991-03-26 | 1992-10-20 | Kokusai Chodendo Sangyo Gijutsu Kenkyu Center | 酸化物超電導膜製造装置 |
US5252134A (en) * | 1991-05-31 | 1993-10-12 | Stauffer Craig M | Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor processing |
US5278940A (en) * | 1991-07-26 | 1994-01-11 | Mueller Hermann Frank | Device utilizing a PTC resistor for electrically heating flowing liquid or gaseous media |
-
1994
- 1994-05-11 US US08/241,184 patent/US5451258A/en not_active Expired - Lifetime
- 1994-11-04 TW TW083110207A patent/TW306969B/zh not_active IP Right Cessation
- 1994-11-29 AU AU13325/95A patent/AU1332595A/en not_active Abandoned
- 1994-11-29 WO PCT/US1994/013743 patent/WO1995031583A1/en active IP Right Grant
- 1994-11-29 DE DE69416534T patent/DE69416534D1/de not_active Expired - Lifetime
- 1994-11-29 CA CA002189559A patent/CA2189559A1/en not_active Abandoned
- 1994-11-29 EP EP95904771A patent/EP0760022B1/de not_active Expired - Lifetime
- 1994-11-29 JP JP52961495A patent/JP3398751B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH10500733A (ja) | 1998-01-20 |
JP3398751B2 (ja) | 2003-04-21 |
AU1332595A (en) | 1995-12-05 |
CA2189559A1 (en) | 1995-11-23 |
US5451258A (en) | 1995-09-19 |
TW306969B (de) | 1997-06-01 |
EP0760022B1 (de) | 1999-02-10 |
EP0760022A1 (de) | 1997-03-05 |
WO1995031583A1 (en) | 1995-11-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69416534D1 (de) | Vorrichtung und verfahren zur gasreaktantabgabe | |
DE69521969D1 (de) | Verfahren und Vorrichtung zur Lichtbogen unterstützten CVD | |
DE69722587D1 (de) | Vorrichtung und Verfahren zur Plasmavorbereitung | |
DE69816682D1 (de) | Verfahren und Vorrichtung zur Abgasbehandlung | |
DE69822687D1 (de) | Vorrichtung und Verfahren zur Zusammenfassung | |
DE69615303T2 (de) | Vorrichtung und Verfahren zur Abgasreinigung | |
DE69213311D1 (de) | Verfahren und Vorrichtung zur Versorgung mit Gas | |
DE69609265D1 (de) | Verfahren und Vorrichtung für Gasbehandlung | |
DE69835314D1 (de) | Verfahren und Vorrichtung zur formatgesteuerten Interaktion zwischen Geräten | |
DE69630589D1 (de) | Verfahren und vorrichtung zur plasmaerzeugung | |
DE69835511D1 (de) | Verfahren und Vorrichtung zur Durckimpulsbetätigte Telemetrie | |
DE69432142T2 (de) | Verfahren und vorrichtung zur effizienten transkodierung | |
DE69801106D1 (de) | Verfahren und vorrichtung zur niederdruckzerstäubung | |
DE69618859D1 (de) | Verfahren und Vorrichtung zur Abgasreinigung | |
DE69633844D1 (de) | Verfahren und Vorrichtung zur mehrfachen Kommunikation | |
DE69724202D1 (de) | Verfahren und Vorrichtung zur Mischung von Gasen | |
DE69528743D1 (de) | Verfahren und Vorrichtung zur Plasmabehandlung | |
DE69623879D1 (de) | Vorrichtung und Verfahren zur Volumenermittlung | |
DE69628494D1 (de) | Vorrichtung und Verfahren zur Koordinateneingabe | |
DE69818981D1 (de) | Vorrichtung und verfahren zur kristallisation | |
DE69622420D1 (de) | Verfahren und vorrichtung zur reduzierung unerwünschter rückkopplung | |
DE69819366D1 (de) | Verfahren und vorrichtung zur verflüssigung | |
DE69506449T2 (de) | Verfahren und vorrichtung zur zwischenbildkodierung | |
DE69603795T2 (de) | Verfahren und Vorrichtung zur Herstellung von Stahlröhren | |
DE69525879D1 (de) | Verfahren und Vorrichtung zur Dickebewertung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |