DE69414744D1 - Verfahren und Schaltung zum Konfigurieren von Eingang/Ausgangsanordnungen - Google Patents
Verfahren und Schaltung zum Konfigurieren von Eingang/AusgangsanordnungenInfo
- Publication number
- DE69414744D1 DE69414744D1 DE69414744T DE69414744T DE69414744D1 DE 69414744 D1 DE69414744 D1 DE 69414744D1 DE 69414744 T DE69414744 T DE 69414744T DE 69414744 T DE69414744 T DE 69414744T DE 69414744 D1 DE69414744 D1 DE 69414744D1
- Authority
- DE
- Germany
- Prior art keywords
- circuit
- output arrangements
- configuring input
- configuring
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1093—Input synchronization
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1087—Data input latches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/037,818 US5373470A (en) | 1993-03-26 | 1993-03-26 | Method and circuit for configuring I/O devices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69414744D1 true DE69414744D1 (de) | 1999-01-07 |
DE69414744T2 DE69414744T2 (de) | 1999-07-22 |
Family
ID=21896522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69414744T Expired - Fee Related DE69414744T2 (de) | 1993-03-26 | 1994-02-23 | Verfahren und Schaltung zum Konfigurieren von Eingang/Ausgangsanordnungen |
Country Status (5)
Country | Link |
---|---|
US (1) | US5373470A (de) |
EP (1) | EP0618584B1 (de) |
JP (1) | JP3089247B2 (de) |
KR (1) | KR100294965B1 (de) |
DE (1) | DE69414744T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6388314B1 (en) | 1995-08-17 | 2002-05-14 | Micron Technology, Inc. | Single deposition layer metal dynamic random access memory |
US5744870A (en) * | 1996-06-07 | 1998-04-28 | Micron Technology, Inc. | Memory device with multiple input/output connections |
KR100499844B1 (ko) * | 1996-07-11 | 2006-04-21 | 텍사스 인스트루먼츠 인코포레이티드 | 정렬데이타저장장치및본딩패드를구비한dram구조 |
US5900021A (en) * | 1997-04-04 | 1999-05-04 | United Memories, Inc. | Pad input select circuit for use with bond options |
US5903491A (en) | 1997-06-09 | 1999-05-11 | Micron Technology, Inc. | Single deposition layer metal dynamic random access memory |
US6295231B1 (en) | 1998-07-17 | 2001-09-25 | Kabushiki Kaisha Toshiba | High-speed cycle clock-synchronous memory device |
US7131033B1 (en) | 2002-06-21 | 2006-10-31 | Cypress Semiconductor Corp. | Substrate configurable JTAG ID scheme |
US7818640B1 (en) | 2004-10-22 | 2010-10-19 | Cypress Semiconductor Corporation | Test system having a master/slave JTAG controller |
US7908412B2 (en) * | 2006-05-10 | 2011-03-15 | Microsoft Corporation | Buffer passing mechanisms |
US7844764B2 (en) * | 2007-10-01 | 2010-11-30 | Honeywell International Inc. | Unitary control module with adjustable input/output mapping |
US8621377B2 (en) | 2011-03-24 | 2013-12-31 | Honeywell International Inc. | Configurable HVAC controller terminal labeling |
US20210098057A1 (en) * | 2019-09-26 | 2021-04-01 | Qualcomm Incorporated | Sram low-power write driver |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60252979A (ja) * | 1984-05-30 | 1985-12-13 | Oki Electric Ind Co Ltd | Cmos入出力回路 |
US4649516A (en) * | 1984-06-01 | 1987-03-10 | International Business Machines Corp. | Dynamic row buffer circuit for DRAM |
US4577293A (en) * | 1984-06-01 | 1986-03-18 | International Business Machines Corporation | Distributed, on-chip cache |
JP2501344B2 (ja) * | 1987-12-26 | 1996-05-29 | 株式会社東芝 | デ―タ転送回路 |
US5146427A (en) * | 1989-08-30 | 1992-09-08 | Hitachi Ltd. | High speed semiconductor memory having a direct-bypass signal path |
US5068881A (en) * | 1990-08-10 | 1991-11-26 | Hewlett-Packard Company | Scannable register with delay test capability |
JP2530055B2 (ja) * | 1990-08-30 | 1996-09-04 | 株式会社東芝 | 半導体集積回路 |
-
1993
- 1993-03-26 US US08/037,818 patent/US5373470A/en not_active Expired - Lifetime
-
1994
- 1994-02-23 DE DE69414744T patent/DE69414744T2/de not_active Expired - Fee Related
- 1994-02-23 EP EP94102694A patent/EP0618584B1/de not_active Expired - Lifetime
- 1994-03-21 KR KR1019940005619A patent/KR100294965B1/ko not_active IP Right Cessation
- 1994-03-28 JP JP06080977A patent/JP3089247B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100294965B1 (ko) | 2001-09-17 |
JP3089247B2 (ja) | 2000-09-18 |
DE69414744T2 (de) | 1999-07-22 |
US5373470A (en) | 1994-12-13 |
JPH06302697A (ja) | 1994-10-28 |
EP0618584A1 (de) | 1994-10-05 |
KR940020994A (ko) | 1994-10-17 |
EP0618584B1 (de) | 1998-11-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: MOSEL VITELIC INC., HSINCHU, TW |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: WEICKMANN & WEICKMANN, 81679 MUENCHEN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: PROMOS TECHNOLOGIES, INC., HSINCHU, TW |
|
8339 | Ceased/non-payment of the annual fee |