DE69412435T4 - Ferroelektrische Dünnschicht sowie Verfahren zur dessen Herstellung - Google Patents

Ferroelektrische Dünnschicht sowie Verfahren zur dessen Herstellung

Info

Publication number
DE69412435T4
DE69412435T4 DE69412435T DE69412435T DE69412435T4 DE 69412435 T4 DE69412435 T4 DE 69412435T4 DE 69412435 T DE69412435 T DE 69412435T DE 69412435 T DE69412435 T DE 69412435T DE 69412435 T4 DE69412435 T4 DE 69412435T4
Authority
DE
Germany
Prior art keywords
production
thin film
ferroelectric thin
ferroelectric
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69412435T
Other languages
English (en)
Other versions
DE69412435T2 (de
DE69412435D1 (de
Inventor
Atsushi Tomozawa
Satoru Fujii
Eiji Fujii
Ryoichi Takayama
Masafumi Kobune
Satoshi Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69412435T2 publication Critical patent/DE69412435T2/de
Application granted granted Critical
Publication of DE69412435T4 publication Critical patent/DE69412435T4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/472—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on lead titanates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H10N15/15—Thermoelectric active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)
DE69412435T 1993-12-01 1994-11-30 Ferroelektrische Dünnschicht sowie Verfahren zur dessen Herstellung Expired - Lifetime DE69412435T4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30141193 1993-12-01

Publications (2)

Publication Number Publication Date
DE69412435T2 DE69412435T2 (de) 1999-01-07
DE69412435T4 true DE69412435T4 (de) 1999-06-24

Family

ID=17896559

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69412435T Expired - Lifetime DE69412435T4 (de) 1993-12-01 1994-11-30 Ferroelektrische Dünnschicht sowie Verfahren zur dessen Herstellung
DE69412435A Expired - Fee Related DE69412435D1 (de) 1993-12-01 1994-11-30 Ferroelektrische Dünnschicht sowie Verfahren zur dessen Herstellung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69412435A Expired - Fee Related DE69412435D1 (de) 1993-12-01 1994-11-30 Ferroelektrische Dünnschicht sowie Verfahren zur dessen Herstellung

Country Status (5)

Country Link
US (2) US5717157A (de)
EP (1) EP0656429B1 (de)
KR (1) KR0147245B1 (de)
CN (1) CN1076850C (de)
DE (2) DE69412435T4 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0839653A3 (de) * 1996-10-29 1999-06-30 Matsushita Electric Industrial Co., Ltd. Tintenstrahlaufzeichnungsgerät und Verfahren zu seiner Herstellung
JP3666177B2 (ja) 1997-04-14 2005-06-29 松下電器産業株式会社 インクジェット記録装置
KR100329774B1 (ko) * 1998-12-22 2002-05-09 박종섭 강유전체 기억소자의 캐패시터 형성 방법
US6491889B2 (en) * 2000-04-03 2002-12-10 Ibule Photonics Co., Ltd. Ferroelectric single crystal wafer and process for the preparation thereof
TW555895B (en) * 2000-09-11 2003-10-01 Ii Vi Inc Single crystals of lead magnesium niobate-lead titanate
US7083270B2 (en) * 2002-06-20 2006-08-01 Matsushita Electric Industrial Co., Ltd. Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus
KR20040050458A (ko) * 2002-12-10 2004-06-16 크리스탈솔루션 (주) 단결정 산화마그네슘의 처리 방법
US7059711B2 (en) 2003-02-07 2006-06-13 Canon Kabushiki Kaisha Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
WO2004109749A2 (en) * 2003-06-11 2004-12-16 Yeda Research And Development Company Ltd. Pyroelectric compound and method of its preparation
US7768050B2 (en) * 2006-07-07 2010-08-03 The Trustees Of The University Of Pennsylvania Ferroelectric thin films
US8324783B1 (en) 2012-04-24 2012-12-04 UltraSolar Technology, Inc. Non-decaying electric power generation from pyroelectric materials
US20130327634A1 (en) * 2012-06-08 2013-12-12 Chang-Beom Eom Misaligned sputtering systems for the deposition of complex oxide thin films
CN103588478A (zh) * 2013-11-15 2014-02-19 中船重工海声科技有限公司 一种钛酸铅压电陶瓷及制备方法
KR101492022B1 (ko) 2014-03-11 2015-02-11 한국화학연구원 무／유기 하이브리드 페로브스카이트 화합물계 태양전지
CN104868048B (zh) * 2015-05-13 2018-02-02 重庆科技学院 一种光致伸缩复合膜及其制作的光驱动器
CN105428530B (zh) * 2015-12-17 2018-07-03 中山大学 一种电阻开关性能可通过力学载荷调控的plt薄膜及其制备方法
CN108588843B (zh) * 2018-06-15 2023-08-11 光奥科技（武汉）有限公司 一种高精度横向真空镀膜键合装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5110794B1 (de) * 1971-03-19 1976-04-06
CA1108842A (en) * 1978-10-30 1981-09-15 Kiyoshi Furukawa High dielectric constant type ceramic composition
JPS59141104A (ja) * 1983-02-01 1984-08-13 松下電器産業株式会社 強誘電体薄膜の製造方法
JPS59141427A (ja) * 1983-02-01 1984-08-14 Matsushita Electric Ind Co Ltd 強誘電体薄膜
US4731172A (en) * 1985-04-18 1988-03-15 Matsushita Electric Industrial Co., Ltd. Method for sputtering multi-component thin-film
JPS61285609A (ja) * 1985-06-13 1986-12-16 日本曹達株式会社 チタン酸鉛強誘電体薄膜およびその製造方法
JP2532381B2 (ja) * 1986-03-04 1996-09-11 松下電器産業株式会社 強誘電体薄膜素子及びその製造方法
JPS6369272A (ja) * 1986-09-10 1988-03-29 Matsushita Electric Ind Co Ltd 焦電薄膜
JPS63156057A (ja) * 1986-12-19 1988-06-29 科学技術庁無機材質研究所長 高密度ペロブスカイトセラミックスの製造法
US5077270A (en) * 1987-03-26 1991-12-31 Matsushita Electric Industrial Co., Ltd. Elements comprising a film of a perovskite compound whose crystallographic axes are oriented and a method of making such elements
US4946810A (en) * 1987-08-24 1990-08-07 The Dow Chemical Company Preparation of ABO3 compounds from mixed metal aromatic coordination complexes
JP2676775B2 (ja) * 1988-03-31 1997-11-17 住友化学工業株式会社 薄膜状誘電体及びその製造方法
JP2718414B2 (ja) * 1989-03-30 1998-02-25 マツダ株式会社 チタン酸鉛薄膜の製造方法
JP2542100B2 (ja) * 1990-02-20 1996-10-09 タテホ化学工業株式会社 強誘電体薄膜
US5104690A (en) * 1990-06-06 1992-04-14 Spire Corporation CVD thin film compounds
JP2503731B2 (ja) * 1990-06-19 1996-06-05 株式会社村田製作所 低温焼結用誘電体磁器組成物
US5164349A (en) * 1990-06-29 1992-11-17 Ube Industries Ltd. Electromagnetic effect material
JPH04130682A (ja) * 1990-09-20 1992-05-01 Mitsubishi Kasei Corp アクチュエータ用圧電セラミック組成物
JP2891304B2 (ja) * 1990-11-16 1999-05-17 三菱マテリアル株式会社 超高純度強誘電体薄膜
DE4115949A1 (de) * 1991-05-16 1992-11-19 Philips Patentverwaltung Pyroelektrisches keramikmaterial und dessen verwendung
JPH04342459A (ja) * 1991-05-16 1992-11-27 Toyota Motor Corp チタン酸鉛系圧電セラミックス材料

Also Published As

Publication number Publication date
DE69412435T2 (de) 1999-01-07
DE69412435D1 (de) 1998-09-17
CN1111388A (zh) 1995-11-08
US5717157A (en) 1998-02-10
KR0147245B1 (ko) 1998-09-15
US5989395A (en) 1999-11-23
EP0656429B1 (de) 1998-08-12
CN1076850C (zh) 2001-12-26
KR950020763A (ko) 1995-07-24
EP0656429A1 (de) 1995-06-07

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