DE69410358T2 - Planar-Magnetron-Zerstäubungs-Apparat - Google Patents

Planar-Magnetron-Zerstäubungs-Apparat

Info

Publication number
DE69410358T2
DE69410358T2 DE69410358T DE69410358T DE69410358T2 DE 69410358 T2 DE69410358 T2 DE 69410358T2 DE 69410358 T DE69410358 T DE 69410358T DE 69410358 T DE69410358 T DE 69410358T DE 69410358 T2 DE69410358 T2 DE 69410358T2
Authority
DE
Germany
Prior art keywords
planar magnetron
magnetron atomizer
atomizer
planar
magnetron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69410358T
Other languages
English (en)
Other versions
DE69410358D1 (de
Inventor
Peter A Sieck
Milan R Kirs
Terry A Trumbly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Linde LLC
Original Assignee
BOC Group Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOC Group Inc filed Critical BOC Group Inc
Publication of DE69410358D1 publication Critical patent/DE69410358D1/de
Application granted granted Critical
Publication of DE69410358T2 publication Critical patent/DE69410358T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE69410358T 1993-07-13 1994-06-27 Planar-Magnetron-Zerstäubungs-Apparat Expired - Fee Related DE69410358T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/090,916 US5407551A (en) 1993-07-13 1993-07-13 Planar magnetron sputtering apparatus

Publications (2)

Publication Number Publication Date
DE69410358D1 DE69410358D1 (de) 1998-06-25
DE69410358T2 true DE69410358T2 (de) 1998-12-03

Family

ID=22224947

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69410358T Expired - Fee Related DE69410358T2 (de) 1993-07-13 1994-06-27 Planar-Magnetron-Zerstäubungs-Apparat

Country Status (6)

Country Link
US (1) US5407551A (de)
EP (1) EP0634500B1 (de)
JP (1) JP3547485B2 (de)
KR (1) KR960015666A (de)
CA (1) CA2125532A1 (de)
DE (1) DE69410358T2 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736019A (en) 1996-03-07 1998-04-07 Bernick; Mark A. Sputtering cathode
JP2001523767A (ja) 1997-11-19 2001-11-27 トーソー エスエムディー，インク． Ｎｉ−Ｓｉマグネトロンスパッタリングターゲットを製造する方法と該方法によって製造されるターゲット
AU9410498A (en) * 1997-11-26 1999-06-17 Vapor Technologies, Inc. Apparatus for sputtering or arc evaporation
US6359388B1 (en) 2000-08-28 2002-03-19 Guardian Industries Corp. Cold cathode ion beam deposition apparatus with segregated gas flow
US6495000B1 (en) * 2001-07-16 2002-12-17 Sharp Laboratories Of America, Inc. System and method for DC sputtering oxide films with a finned anode
US6988463B2 (en) * 2002-10-18 2006-01-24 Guardian Industries Corp. Ion beam source with gas introduced directly into deposition/vacuum chamber
US6812648B2 (en) 2002-10-21 2004-11-02 Guardian Industries Corp. Method of cleaning ion source, and corresponding apparatus/system
WO2004099458A2 (en) * 2003-05-02 2004-11-18 Tosoh Smd, Inc. METHODS FOR MAKING LOW SILICON CONTENT Ni-Si SPUTTERING TARGETS AND TARGETS MADE THEREBY
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7087145B1 (en) * 2005-03-10 2006-08-08 Robert Choquette Sputtering cathode assembly
US8470141B1 (en) * 2005-04-29 2013-06-25 Angstrom Sciences, Inc. High power cathode
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
EP1826811A1 (de) * 2006-02-22 2007-08-29 Applied Materials GmbH & Co. KG Sputtern mit gekühltem Target
CA2577757A1 (en) * 2006-03-16 2007-09-16 Sulzer Metco Ag Target holding apparatus
EP1835525A1 (de) * 2006-03-16 2007-09-19 Sulzer Metco AG (Switzerland) Targethaltevorrichtung
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US8961756B2 (en) * 2006-08-04 2015-02-24 Applied Materials, Inc. Ganged scanning of multiple magnetrons, especially two level folded magnetrons
KR100910673B1 (ko) * 2006-08-04 2009-08-04 어플라이드 머티어리얼스, 인코포레이티드 다중 마그네트론들, 특히 2 레벨 접지형 마그네트론들의집단 스캐닝
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) * 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US8575565B2 (en) 2011-10-10 2013-11-05 Guardian Industries Corp. Ion source apparatus and methods of using the same
US10573500B2 (en) 2011-12-09 2020-02-25 Seagate Technology Llc Interchangeable magnet pack
US9347129B2 (en) 2011-12-09 2016-05-24 Seagate Technology Llc Interchangeable magnet pack
US9476118B2 (en) 2012-12-10 2016-10-25 Angstrom Sciences, Inc. Adjustable shunt assembly for a sputtering magnetron and a method for adjusting such a shunt
DE202014006417U1 (de) 2014-08-11 2014-08-20 Grenzebach Maschinenbau Gmbh Vorrichtung zur Energieeinsparung und gleichzeitigen Erhöhung der Durchlaufgeschwindigkeit bei Vakuum-Beschichtungsanlagen
DE102014011877B4 (de) 2014-08-11 2021-08-05 Grenzebach Maschinenbau Gmbh Verfahren und Vorrichtung zur Energieeinsparung und gleichzeitigen Erhöhung der Durchlaufgeschwindigkeit bei Vakuum-Beschichtungsanlagen
US10811236B2 (en) 2014-10-29 2020-10-20 General Plasma, Inc. Magnetic anode for sputter magnetron cathode
RU176970U1 (ru) * 2017-04-14 2018-02-05 федеральное государственное бюджетное образовательное учреждение высшего образования "Ижевский государственный технический университет имени М.Т. Калашникова" Кольцевой планарный магнетрон
TWI641712B (zh) * 2017-12-04 2018-11-21 國家中山科學研究院 Heating stage device applied to sputtering target gun
CN109161819B (zh) * 2018-09-20 2020-07-07 京磁材料科技股份有限公司 低碳含量的烧结钕铁硼磁体的制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166018A (en) * 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
US3956093A (en) * 1974-12-16 1976-05-11 Airco, Inc. Planar magnetron sputtering method and apparatus
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
DE3047113A1 (de) * 1980-12-13 1982-07-29 Leybold-Heraeus GmbH, 5000 Köln Katodenanordnung und regelverfahren fuer katodenzerstaeubungsanlagen mit einem magnetsystem zur erhoehung der zerstaeubungsrate
US4515675A (en) * 1983-07-06 1985-05-07 Leybold-Heraeus Gmbh Magnetron cathode for cathodic evaportion apparatus
ATE47504T1 (de) * 1983-12-05 1989-11-15 Leybold Ag Magnetronkatode zum zerstaeuben ferromagnetischer targets.
US4657654A (en) * 1984-05-17 1987-04-14 Varian Associates, Inc. Targets for magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges
US4834860A (en) * 1987-07-01 1989-05-30 The Boc Group, Inc. Magnetron sputtering targets
US4892633A (en) * 1988-11-14 1990-01-09 Vac-Tec Systems, Inc. Magnetron sputtering cathode
DE3844064A1 (de) * 1988-12-28 1990-07-05 Leybold Ag Katodenzerstaeubungsvorrichtung nach dem magnetron-prinzip mit einer hohlkatode und einem zylindrischen target
DE3908252C2 (de) * 1989-03-14 1996-06-20 Leybold Ag Zerstäubungskathode nach dem Magnetron-Prinzip
DE3929695C2 (de) * 1989-09-07 1996-12-19 Leybold Ag Vorrichtung zum Beschichten eines Substrats
US5180478A (en) * 1990-12-19 1993-01-19 Intevac, Inc. Sputter coating source
DE4127260C1 (en) * 1991-08-17 1992-04-16 Forschungsgesellschaft Fuer Elektronenstrahl- Und Plasmatechnik Mbh, O-8051 Dresden, De Magnetron sputter source

Also Published As

Publication number Publication date
JPH0754144A (ja) 1995-02-28
KR960015666A (ko) 1996-05-22
JP3547485B2 (ja) 2004-07-28
DE69410358D1 (de) 1998-06-25
US5407551A (en) 1995-04-18
EP0634500A1 (de) 1995-01-18
CA2125532A1 (en) 1995-01-14
EP0634500B1 (de) 1998-05-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee