DE69405722T2 - Plasma-gestaltungs-einbuchtung zur steuerung von zerstaeubungsaetzverfahren - Google Patents
Plasma-gestaltungs-einbuchtung zur steuerung von zerstaeubungsaetzverfahrenInfo
- Publication number
- DE69405722T2 DE69405722T2 DE69405722T DE69405722T DE69405722T2 DE 69405722 T2 DE69405722 T2 DE 69405722T2 DE 69405722 T DE69405722 T DE 69405722T DE 69405722 T DE69405722 T DE 69405722T DE 69405722 T2 DE69405722 T2 DE 69405722T2
- Authority
- DE
- Germany
- Prior art keywords
- wafer
- plasma
- indentation
- wafer surface
- selectively
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005507 spraying Methods 0.000 title 1
- 238000007373 indentation Methods 0.000 claims description 74
- 239000002245 particle Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 14
- 238000000992 sputter etching Methods 0.000 claims description 12
- 230000035515 penetration Effects 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 135
- 239000007789 gas Substances 0.000 description 46
- 150000002500 ions Chemical class 0.000 description 12
- 230000004907 flux Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000012141 concentrate Substances 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000007493 shaping process Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005685 electric field effect Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000005426 magnetic field effect Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/045,368 US5391281A (en) | 1993-04-09 | 1993-04-09 | Plasma shaping plug for control of sputter etching |
| PCT/US1994/003866 WO1994024692A1 (en) | 1993-04-09 | 1994-04-08 | Plasma shaping plug for control of sputter etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69405722D1 DE69405722D1 (de) | 1997-10-23 |
| DE69405722T2 true DE69405722T2 (de) | 1998-01-08 |
Family
ID=21937490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69405722T Expired - Lifetime DE69405722T2 (de) | 1993-04-09 | 1994-04-08 | Plasma-gestaltungs-einbuchtung zur steuerung von zerstaeubungsaetzverfahren |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5391281A (esLanguage) |
| EP (1) | EP0694208B1 (esLanguage) |
| JP (1) | JP3228750B2 (esLanguage) |
| KR (1) | KR100318354B1 (esLanguage) |
| AU (1) | AU6628994A (esLanguage) |
| CA (1) | CA2159494A1 (esLanguage) |
| DE (1) | DE69405722T2 (esLanguage) |
| TW (1) | TW238405B (esLanguage) |
| WO (1) | WO1994024692A1 (esLanguage) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH686254A5 (de) * | 1992-07-27 | 1996-02-15 | Balzers Hochvakuum | Verfahren zur Einstellung der Bearbeitungsratenverteilung sowie Aetz- oder Plasma-CVD-Anlage zu dessen Ausfuehrung. |
| US5556521A (en) * | 1995-03-24 | 1996-09-17 | Sony Corporation | Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source |
| US5716485A (en) * | 1995-06-07 | 1998-02-10 | Varian Associates, Inc. | Electrode designs for controlling uniformity profiles in plasma processing reactors |
| US5589041A (en) * | 1995-06-07 | 1996-12-31 | Sony Corporation | Plasma sputter etching system with reduced particle contamination |
| JP4654176B2 (ja) * | 1996-02-22 | 2011-03-16 | 住友精密工業株式会社 | 誘導結合プラズマ・リアクタ |
| US5989652A (en) * | 1997-01-31 | 1999-11-23 | Tokyo Electron Limited | Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications |
| US5834371A (en) * | 1997-01-31 | 1998-11-10 | Tokyo Electron Limited | Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof |
| US5906866A (en) * | 1997-02-10 | 1999-05-25 | Tokyo Electron Limited | Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface |
| US6271121B1 (en) | 1997-02-10 | 2001-08-07 | Tokyo Electron Limited | Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface |
| KR100829288B1 (ko) | 1998-12-11 | 2008-05-13 | 서페이스 테크놀로지 시스템스 피엘씨 | 플라즈마 처리장치 |
| KR100430583B1 (ko) * | 2001-12-20 | 2004-05-10 | 동부전자 주식회사 | 플라즈마 에칭 장비를 이용한 반도체 소자의 프로파일조절 방법 |
| US8158016B2 (en) * | 2004-02-04 | 2012-04-17 | Veeco Instruments, Inc. | Methods of operating an electromagnet of an ion source |
| US7183716B2 (en) * | 2003-02-04 | 2007-02-27 | Veeco Instruments, Inc. | Charged particle source and operation thereof |
| US7557362B2 (en) * | 2004-02-04 | 2009-07-07 | Veeco Instruments Inc. | Ion sources and methods for generating an ion beam with a controllable ion current density distribution |
| US7713432B2 (en) * | 2004-10-04 | 2010-05-11 | David Johnson | Method and apparatus to improve plasma etch uniformity |
| US20070068795A1 (en) * | 2005-09-26 | 2007-03-29 | Jozef Brcka | Hollow body plasma uniformity adjustment device and method |
| JP5486414B2 (ja) * | 2010-06-08 | 2014-05-07 | 日本放送協会 | プラズマエッチング装置 |
| JP2014209406A (ja) * | 2011-07-20 | 2014-11-06 | キヤノンアネルバ株式会社 | イオンビーム発生装置、およびイオンビームプラズマ処理装置 |
| JP5774539B2 (ja) * | 2012-04-16 | 2015-09-09 | Ｓｐｐテクノロジーズ株式会社 | プラズマエッチング方法 |
| JP5840268B1 (ja) | 2014-08-25 | 2016-01-06 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
| CN115376873A (zh) * | 2021-05-18 | 2022-11-22 | 江苏鲁汶仪器有限公司 | 离子源装置及其使用方法和真空处理系统 |
| KR102994113B1 (ko) | 2022-07-29 | 2026-07-22 | 삼성전자주식회사 | 플라즈마 처리 장치 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1624071A (en) * | 1921-07-28 | 1927-04-12 | Westinghouse Lamp Co | Method of affixing coatings on incandescent-lamp filaments |
| US2103623A (en) * | 1933-09-20 | 1937-12-28 | Ion Corp | Electron discharge device for electronically bombarding materials |
| US2305758A (en) * | 1937-05-25 | 1942-12-22 | Berghaus Bernhard | Coating of articles by cathode disintegration |
| US2257411A (en) * | 1937-11-30 | 1941-09-30 | Berghaus | Method of cathode disintegration |
| US2346483A (en) * | 1942-08-07 | 1944-04-11 | Gen Electric | Chargeproof cover glass |
| US2463180A (en) * | 1943-04-29 | 1949-03-01 | Bell Telephone Labor Inc | Method and apparatus for making mosaic targets for electron beams |
| US2843542A (en) * | 1956-02-23 | 1958-07-15 | George F Callahan | Method and apparatus for producing improved abrading contours |
| US3100272A (en) * | 1961-04-14 | 1963-08-06 | Gen Mills Inc | Low pressure mercury plasma discharge tube |
| US3233137A (en) * | 1961-08-28 | 1966-02-01 | Litton Systems Inc | Method and apparatus for cleansing by ionic bombardment |
| GB1052029A (esLanguage) * | 1962-09-20 | |||
| US3329601A (en) * | 1964-09-15 | 1967-07-04 | Donald M Mattox | Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial |
| US3458426A (en) * | 1966-05-25 | 1969-07-29 | Fabri Tek Inc | Symmetrical sputtering apparatus with plasma confinement |
| DE1765850A1 (de) * | 1967-11-10 | 1971-10-28 | Euratom | Verfahren und Vorrichtung zum Aufbringen von duennen Schichten |
| US3875028A (en) * | 1972-08-30 | 1975-04-01 | Picker Corp | Method of manufacture of x-ray tube having focusing cup with non emitting coating |
| US4116793A (en) * | 1974-12-23 | 1978-09-26 | Telic Corporation | Glow discharge method and apparatus |
| US4342901A (en) * | 1980-08-11 | 1982-08-03 | Eaton Corporation | Plasma etching electrode |
| JPS58157975A (ja) * | 1982-03-10 | 1983-09-20 | Tokyo Ohka Kogyo Co Ltd | プラズマエツチング方法 |
| DE3500328A1 (de) * | 1985-01-07 | 1986-07-10 | Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa | Zerstaeubungsaetzvorrichtung |
| DE3521053A1 (de) * | 1985-06-12 | 1986-12-18 | Leybold-Heraeus GmbH, 5000 Köln | Vorrichtung zum aufbringen duenner schichten auf ein substrat |
| US4632719A (en) * | 1985-09-18 | 1986-12-30 | Varian Associates, Inc. | Semiconductor etching apparatus with magnetic array and vertical shield |
| GB8629634D0 (en) * | 1986-12-11 | 1987-01-21 | Dobson C D | Reactive ion & sputter etching |
| EP0343500B1 (en) * | 1988-05-23 | 1994-01-19 | Nippon Telegraph And Telephone Corporation | Plasma etching apparatus |
| DE3914065A1 (de) * | 1989-04-28 | 1990-10-31 | Leybold Ag | Vorrichtung zur durchfuehrung von plasma-aetzverfahren |
| DE4118973C2 (de) * | 1991-06-08 | 1999-02-04 | Fraunhofer Ges Forschung | Vorrichtung zur plasmaunterstützten Bearbeitung von Substraten und Verwendung dieser Vorrichtung |
| CH686254A5 (de) | 1992-07-27 | 1996-02-15 | Balzers Hochvakuum | Verfahren zur Einstellung der Bearbeitungsratenverteilung sowie Aetz- oder Plasma-CVD-Anlage zu dessen Ausfuehrung. |
| GB2287403B (en) | 1994-02-28 | 1997-08-27 | Benedictis Alfredo De | Device and method for treatment of hair |
-
1993
- 1993-04-09 US US08/045,368 patent/US5391281A/en not_active Expired - Lifetime
-
1994
- 1994-04-08 WO PCT/US1994/003866 patent/WO1994024692A1/en not_active Ceased
- 1994-04-08 AU AU66289/94A patent/AU6628994A/en not_active Abandoned
- 1994-04-08 KR KR1019950704448A patent/KR100318354B1/ko not_active Expired - Lifetime
- 1994-04-08 EP EP94914084A patent/EP0694208B1/en not_active Expired - Lifetime
- 1994-04-08 DE DE69405722T patent/DE69405722T2/de not_active Expired - Lifetime
- 1994-04-08 JP JP52332294A patent/JP3228750B2/ja not_active Expired - Lifetime
- 1994-04-08 CA CA002159494A patent/CA2159494A1/en not_active Abandoned
- 1994-05-25 TW TW083104763A patent/TW238405B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CA2159494A1 (en) | 1994-10-27 |
| EP0694208A1 (en) | 1996-01-31 |
| TW238405B (esLanguage) | 1995-01-11 |
| WO1994024692A1 (en) | 1994-10-27 |
| DE69405722D1 (de) | 1997-10-23 |
| EP0694208B1 (en) | 1997-09-17 |
| US5391281A (en) | 1995-02-21 |
| KR100318354B1 (ko) | 2002-04-22 |
| JP3228750B2 (ja) | 2001-11-12 |
| KR960702167A (ko) | 1996-03-28 |
| JPH08508852A (ja) | 1996-09-17 |
| AU6628994A (en) | 1994-11-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: TOKYO ELECTRON LTD., TOKIO/TOKYO, JP |