DE69404347T2 - Polykristallines Substrat aus Diamant sowie Verfahren zur dessen Herstellung - Google Patents

Polykristallines Substrat aus Diamant sowie Verfahren zur dessen Herstellung

Info

Publication number
DE69404347T2
DE69404347T2 DE69404347T DE69404347T DE69404347T2 DE 69404347 T2 DE69404347 T2 DE 69404347T2 DE 69404347 T DE69404347 T DE 69404347T DE 69404347 T DE69404347 T DE 69404347T DE 69404347 T2 DE69404347 T2 DE 69404347T2
Authority
DE
Germany
Prior art keywords
production
polycrystalline diamond
diamond substrate
substrate
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69404347T
Other languages
English (en)
Other versions
DE69404347T4 (de
DE69404347D1 (de
Inventor
Kenjiro Itami Works Of Higaki
Hideaki Itami Works O Nakahata
Akihiro Itami Works Of Hachigo
Shinichi Itami Works O Shikata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69404347T2 publication Critical patent/DE69404347T2/de
Publication of DE69404347T4 publication Critical patent/DE69404347T4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02582—Characteristics of substrate, e.g. cutting angles of diamond substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE69404347T 1993-02-16 1994-02-10 Polykristallines Substrat aus Diamant sowie Verfahren zur dessen Herstellung Expired - Lifetime DE69404347T4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2650693 1993-02-16

Publications (2)

Publication Number Publication Date
DE69404347T2 true DE69404347T2 (de) 1997-11-13
DE69404347T4 DE69404347T4 (de) 1998-04-09

Family

ID=12195371

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69404347T Expired - Lifetime DE69404347T4 (de) 1993-02-16 1994-02-10 Polykristallines Substrat aus Diamant sowie Verfahren zur dessen Herstellung
DE69404347A Expired - Lifetime DE69404347D1 (de) 1993-02-16 1994-02-10 Polykristallines Substrat aus Diamant sowie Verfahren zur dessen Herstellung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69404347A Expired - Lifetime DE69404347D1 (de) 1993-02-16 1994-02-10 Polykristallines Substrat aus Diamant sowie Verfahren zur dessen Herstellung

Country Status (3)

Country Link
US (1) US5501909A (de)
EP (1) EP0616047B1 (de)
DE (2) DE69404347T4 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6037259A (en) * 1998-05-11 2000-03-14 Vanguard International Semiconductor Corporation Method for forming identifying characters on a silicon wafer
US6416865B1 (en) * 1998-10-30 2002-07-09 Sumitomo Electric Industries, Ltd. Hard carbon film and surface acoustic-wave substrate
US6580196B1 (en) * 1999-08-17 2003-06-17 Shin-Etsu Chemical Co., Ltd. Piezoelectric single crystal wafer
US6258139B1 (en) 1999-12-20 2001-07-10 U S Synthetic Corporation Polycrystalline diamond cutter with an integral alternative material core
GB0212530D0 (en) * 2002-05-30 2002-07-10 Diamanx Products Ltd Diamond cutting insert
US7183548B1 (en) * 2004-02-25 2007-02-27 Metadigm Llc Apparatus for modifying and measuring diamond and other workpiece surfaces with nanoscale precision
US10438703B2 (en) * 2004-02-25 2019-10-08 Sunshell Llc Diamond structures as fuel capsules for nuclear fusion
US20070269604A1 (en) * 2006-01-13 2007-11-22 Daniel Francis Method for manufacturing smooth diamond heat sinks

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE442305B (sv) * 1984-06-27 1985-12-16 Santrade Ltd Forfarande for kemisk gasutfellning (cvd) for framstellning av en diamantbelagd sammansatt kropp samt anvendning av kroppen
JPS61210518A (ja) * 1985-03-13 1986-09-18 Matsushita Electric Ind Co Ltd 磁気記録媒体の製造方法
US4863529A (en) * 1987-03-12 1989-09-05 Sumitomo Electric Industries, Ltd. Thin film single crystal diamond substrate
JPS6462911A (en) * 1987-09-03 1989-03-09 Sumitomo Electric Industries Surface acoustic wave element
US5131963A (en) * 1987-11-16 1992-07-21 Crystallume Silicon on insulator semiconductor composition containing thin synthetic diamone films
FR2633449B1 (fr) * 1988-06-28 1990-10-26 Comurhex Procede de remise en forme de pieces localement deteriorees, notamment anticathodes
US5036373A (en) * 1989-06-01 1991-07-30 Semiconductor Energy Laboratory Co., Ltd. Electric device with grains and an insulating layer
JP2775903B2 (ja) * 1989-10-04 1998-07-16 住友電気工業株式会社 ダイヤモンド半導体素子
US5082359A (en) * 1989-11-28 1992-01-21 Epion Corporation Diamond films and method of growing diamond films on nondiamond substrates
JP2885349B2 (ja) * 1989-12-26 1999-04-19 住友電気工業株式会社 表面弾性波素子
JPH0437616A (ja) * 1990-06-01 1992-02-07 Canon Inc 光学素子成形用型及びその製造方法
US5114696A (en) * 1990-08-06 1992-05-19 Texas Instruments Incorporated Diamond growth method
US5221501A (en) * 1991-06-11 1993-06-22 The United States Of America As Represented By The Secretary Of Commerce Method of producing a smooth plate of diamond
US5260141A (en) * 1991-11-29 1993-11-09 Regents Of The University Of Minnesota Diamond coated products

Also Published As

Publication number Publication date
DE69404347T4 (de) 1998-04-09
DE69404347D1 (de) 1997-08-28
US5501909A (en) 1996-03-26
EP0616047A1 (de) 1994-09-21
EP0616047B1 (de) 1997-07-23

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