DE69328751D1 - Emitter-geschalteter Thyristor und Verfahren zu seiner Herstellung - Google Patents

Emitter-geschalteter Thyristor und Verfahren zu seiner Herstellung

Info

Publication number
DE69328751D1
DE69328751D1 DE69328751T DE69328751T DE69328751D1 DE 69328751 D1 DE69328751 D1 DE 69328751D1 DE 69328751 T DE69328751 T DE 69328751T DE 69328751 T DE69328751 T DE 69328751T DE 69328751 D1 DE69328751 D1 DE 69328751D1
Authority
DE
Germany
Prior art keywords
emitter
production
switched thyristor
thyristor
switched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69328751T
Other languages
English (en)
Other versions
DE69328751T2 (de
Inventor
Kazuhiko Niwayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69328751D1 publication Critical patent/DE69328751D1/de
Application granted granted Critical
Publication of DE69328751T2 publication Critical patent/DE69328751T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE69328751T 1992-05-06 1993-02-23 Emitter-geschalteter Thyristor und Verfahren zu seiner Herstellung Expired - Fee Related DE69328751T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4113594A JP2796470B2 (ja) 1992-05-06 1992-05-06 自己消弧型サイリスタおよびその製造方法

Publications (2)

Publication Number Publication Date
DE69328751D1 true DE69328751D1 (de) 2000-07-06
DE69328751T2 DE69328751T2 (de) 2000-11-09

Family

ID=14616169

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69328751T Expired - Fee Related DE69328751T2 (de) 1992-05-06 1993-02-23 Emitter-geschalteter Thyristor und Verfahren zu seiner Herstellung

Country Status (4)

Country Link
US (1) US5345095A (de)
EP (1) EP0569116B1 (de)
JP (1) JP2796470B2 (de)
DE (1) DE69328751T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4402877C2 (de) * 1994-02-01 1995-12-14 Daimler Benz Ag Durch MOS-Gate schaltbares Leistungshalbleiterbauelement
JP4416288B2 (ja) * 2000-07-27 2010-02-17 三菱電機株式会社 逆導通サイリスタ
JP4437655B2 (ja) * 2003-10-02 2010-03-24 三菱電機株式会社 半導体装置及び半導体装置の駆動回路
CN101414609B (zh) * 2008-11-12 2010-06-09 泓广科技有限公司 半导体元件
WO2011039568A1 (de) * 2009-09-30 2011-04-07 X-Fab Semiconductor Foundries Ag Halbleiterbauelement mit fensteroeffnung als schnittstelle zur umgebungs-ankopplung

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5680165A (en) * 1979-12-04 1981-07-01 Mitsubishi Electric Corp Gate turn-off thyristor
DE3018468A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb
DE3112942A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor und verfahren zu seinem betrieb
DE3230741A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter mit einem abschaltbaren thyristor
JPS5986262A (ja) * 1982-11-08 1984-05-18 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
JPS60189261A (ja) * 1984-03-09 1985-09-26 Toshiba Corp ゲ−トタ−ンオフサイリスタ
EP0219995B1 (de) * 1985-09-30 1994-03-02 Kabushiki Kaisha Toshiba Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren
US4847671A (en) * 1987-05-19 1989-07-11 General Electric Company Monolithically integrated insulated gate semiconductor device
GB2243021A (en) * 1990-04-09 1991-10-16 Philips Electronic Associated Mos- gated thyristor
US5381026A (en) * 1990-09-17 1995-01-10 Kabushiki Kaisha Toshiba Insulated-gate thyristor
JP3163677B2 (ja) * 1991-09-24 2001-05-08 富士電機株式会社 Ｍｉｓｆｅｔ制御型サイリスタを有する半導体装置

Also Published As

Publication number Publication date
JPH05315599A (ja) 1993-11-26
US5345095A (en) 1994-09-06
EP0569116B1 (de) 2000-05-31
DE69328751T2 (de) 2000-11-09
EP0569116A1 (de) 1993-11-10
JP2796470B2 (ja) 1998-09-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee