DE69328140D1 - Blankophotomaske und Phasenverschiebungsmaske - Google Patents

Blankophotomaske und Phasenverschiebungsmaske

Info

Publication number
DE69328140D1
DE69328140D1 DE69328140T DE69328140T DE69328140D1 DE 69328140 D1 DE69328140 D1 DE 69328140D1 DE 69328140 T DE69328140 T DE 69328140T DE 69328140 T DE69328140 T DE 69328140T DE 69328140 D1 DE69328140 D1 DE 69328140D1
Authority
DE
Germany
Prior art keywords
mask
phase shift
blank photo
blank
shift mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69328140T
Other languages
English (en)
Other versions
DE69328140T2 (de
Inventor
Hiroshi Mohri
Keiji Hashimoto
Masahiro Takahashi
Waturu Tokyo Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP21123092A external-priority patent/JPH0659433A/ja
Priority claimed from JP21123192A external-priority patent/JPH0659434A/ja
Priority claimed from JP22240592A external-priority patent/JP3225102B2/ja
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Publication of DE69328140D1 publication Critical patent/DE69328140D1/de
Application granted granted Critical
Publication of DE69328140T2 publication Critical patent/DE69328140T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69328140T 1992-08-07 1993-08-06 Blankophotomaske und Phasenverschiebungsmaske Expired - Fee Related DE69328140T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP21123092A JPH0659433A (ja) 1992-08-07 1992-08-07 フォトマスクブランク及びフォトマスク
JP21123192A JPH0659434A (ja) 1992-08-07 1992-08-07 位相シフトフォトマスクブランク及び位相シフトフォトマスク
JP22240592A JP3225102B2 (ja) 1992-08-21 1992-08-21 位相シフトフォトマスクブランク及び位相シフトフォトマスク

Publications (2)

Publication Number Publication Date
DE69328140D1 true DE69328140D1 (de) 2000-04-27
DE69328140T2 DE69328140T2 (de) 2000-08-10

Family

ID=27329220

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69328140T Expired - Fee Related DE69328140T2 (de) 1992-08-07 1993-08-06 Blankophotomaske und Phasenverschiebungsmaske

Country Status (4)

Country Link
US (1) US5419988A (de)
EP (1) EP0582308B1 (de)
KR (2) KR100306861B1 (de)
DE (1) DE69328140T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100311704B1 (ko) * 1993-08-17 2001-12-15 기타오카 다카시 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및그블랭크스의제조방법
JP2878143B2 (ja) * 1994-02-22 1999-04-05 インターナショナル・ビジネス・マシーンズ・コーポレイション 減衰位相シフト・マスク作成用の薄膜材料及びその作成方法
US5952128A (en) * 1995-08-15 1999-09-14 Ulvac Coating Corporation Phase-shifting photomask blank and method of manufacturing the same as well as phase-shifting photomask
TW337610B (en) * 1997-11-18 1998-08-01 United Microelectronics Corp Structure with reduced stress between a spin-on-glass layer and a metal layer and process for producing the same
JP3257593B2 (ja) * 1999-02-05 2002-02-18 日本電気株式会社 半導体装置の製造方法
AU2002236520A1 (en) * 2000-12-01 2002-06-11 Unaxis Usa Inc. Embedded attenuated phase shift mask and method of making embedded attenuated phase shift mask
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
DE10361875B4 (de) * 2003-12-19 2009-04-09 Qimonda Ag Lithographiemaske, Verwendung der Lithographiemaske und Verfahren zur Herstellung der Lithographiemaske
JP2007149768A (ja) * 2005-11-24 2007-06-14 Nec Electronics Corp 半導体装置の製造方法
KR101465474B1 (ko) * 2008-01-03 2014-11-27 삼성디스플레이 주식회사 하프톤마스크와, 이의 제조방법
KR102167179B1 (ko) 2020-02-19 2020-10-16 일성기계공업 주식회사 원단 수축 건조기의 노즐구조체
KR102234321B1 (ko) 2020-12-01 2021-03-31 일성기계공업 주식회사 선택적 건조 기능을 갖는 원단 수축 건조기

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764739A (en) * 1980-10-09 1982-04-20 Dainippon Printing Co Ltd Photomask substrate and photomask
DE3170637D1 (en) * 1980-12-22 1985-06-27 Dainippon Printing Co Ltd Photomask and photomask blank
JPS57104141A (en) * 1980-12-22 1982-06-29 Dainippon Printing Co Ltd Photomask and photomask substrate
US4440841A (en) * 1981-02-28 1984-04-03 Dai Nippon Insatsu Kabushiki Kaisha Photomask and photomask blank
US4374912A (en) * 1981-03-31 1983-02-22 Dai Nippon Insatsu Kabushiki Kaisha Photomask and photomask blank
JP3036085B2 (ja) * 1990-12-28 2000-04-24 富士通株式会社 光学マスクとその欠陥修正方法

Also Published As

Publication number Publication date
EP0582308B1 (de) 2000-03-22
KR100317211B1 (ko) 2001-12-24
KR100306861B1 (ko) 2001-11-30
KR940004383A (ko) 1994-03-15
EP0582308A3 (en) 1996-07-03
DE69328140T2 (de) 2000-08-10
EP0582308A2 (de) 1994-02-09
US5419988A (en) 1995-05-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee