DE69325120D1 - Halbleiterschalter mit Temperaturfühler - Google Patents

Halbleiterschalter mit Temperaturfühler

Info

Publication number
DE69325120D1
DE69325120D1 DE69325120T DE69325120T DE69325120D1 DE 69325120 D1 DE69325120 D1 DE 69325120D1 DE 69325120 T DE69325120 T DE 69325120T DE 69325120 T DE69325120 T DE 69325120T DE 69325120 D1 DE69325120 D1 DE 69325120D1
Authority
DE
Germany
Prior art keywords
temperature sensor
semiconductor switch
semiconductor
switch
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69325120T
Other languages
English (en)
Other versions
DE69325120T2 (de
Inventor
Brendon Patrick Kelly
Royce Lowis
Paul Timothy C O Philips Moody
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69325120D1 publication Critical patent/DE69325120D1/de
Application granted granted Critical
Publication of DE69325120T2 publication Critical patent/DE69325120T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G01K7/20—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
DE69325120T 1992-03-20 1993-03-12 Halbleiterschalter mit Temperaturfühler Expired - Fee Related DE69325120T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB929206058A GB9206058D0 (en) 1992-03-20 1992-03-20 A semiconductor switch and a temperature sensing circuit for such a switch

Publications (2)

Publication Number Publication Date
DE69325120D1 true DE69325120D1 (de) 1999-07-08
DE69325120T2 DE69325120T2 (de) 1999-11-25

Family

ID=10712490

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325120T Expired - Fee Related DE69325120T2 (de) 1992-03-20 1993-03-12 Halbleiterschalter mit Temperaturfühler

Country Status (6)

Country Link
US (1) US5434443A (de)
EP (1) EP0561461B1 (de)
JP (1) JP3315456B2 (de)
KR (1) KR100241636B1 (de)
DE (1) DE69325120T2 (de)
GB (1) GB9206058D0 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19534604C1 (de) * 1995-09-18 1996-10-24 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement mit mehreren Temperatursensoren zum Schutz vor Überlastung
DE19548060A1 (de) * 1995-12-21 1997-06-26 Siemens Ag Durch Feldeffekt steuerbares Leistungs-Halbleiterbauelement mit Temperatursensor
JP3384522B2 (ja) * 1996-07-30 2003-03-10 矢崎総業株式会社 スイッチング装置
US5770880A (en) * 1996-09-03 1998-06-23 Harris Corporation P-collector H.V. PMOS switch VT adjusted source/drain
DE19644193C2 (de) * 1996-10-24 2001-04-19 Bosch Gmbh Robert Integrierte Überlastschutzeinrichtung mit Temperatursensor
US6088208A (en) * 1997-03-31 2000-07-11 Matsushita Electronics Corporation Electronic device, electronic switching apparatus including the same, and production method thereof
US5873053A (en) * 1997-04-08 1999-02-16 International Business Machines Corporation On-chip thermometry for control of chip operating temperature
DE19727229C1 (de) * 1997-06-26 1998-07-23 Siemens Ag Schaltungsanordnung zum Erfassen des Überschreitens einer kritischen Temperatur eines Bauelements
GB9818044D0 (en) * 1998-08-20 1998-10-14 Koninkl Philips Electronics Nv Power transistor device
US6055149A (en) * 1998-12-02 2000-04-25 Intersil Corporation Current limited, thermally protected, power device
KR100353471B1 (ko) 1998-12-23 2002-11-18 주식회사 하이닉스반도체 데이터 센스 앰프
DE10220587B4 (de) * 2002-05-08 2007-07-19 Infineon Technologies Ag Temperatursensor für MOS-Schaltungsanordnung
JP4771043B2 (ja) * 2004-09-06 2011-09-14 日本電気株式会社 薄膜半導体素子及びその駆動回路並びにそれらを用いた装置
EP1691484B1 (de) * 2005-02-10 2016-08-17 STMicroelectronics Srl Thermische Schutzvorrichtung für einen integrierten MOS Leistungstransistor
JP2006319153A (ja) * 2005-05-13 2006-11-24 Sony Corp 半導体集積回路及びその制御方法
WO2007141870A1 (ja) 2006-06-09 2007-12-13 Fujitsu Limited 温度センサ用リングオシレータ、温度センサ回路及びこれを備える半導体装置
DE602006021740D1 (de) 2006-08-04 2011-06-16 Stmicroelectronics Design And Applic S R O Mikroelektronische schaltung ausgestattet mit einer thermischen schutzschaltung und thermische schutzmethode für eine mikroelektronische schaltung
KR100850091B1 (ko) * 2006-12-28 2008-08-04 동부일렉트로닉스 주식회사 반도체 소자를 이용한 온도센서 및 그 제조 방법
US7798703B2 (en) 2007-05-09 2010-09-21 Infineon Technologies Ag Apparatus and method for measuring local surface temperature of semiconductor device
WO2009141347A1 (de) * 2008-05-19 2009-11-26 X-Fab Semiconductor Foundries Ag Betriebstemperaturmessung eines mos-leistungsbauelements und mos bauelement zur ausfuehrung des verfahrens
US7944269B2 (en) * 2008-09-26 2011-05-17 Infineon Technologies Ag Power transistor and method for controlling a power transistor
KR101991735B1 (ko) * 2011-05-19 2019-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
CN102394237A (zh) * 2011-12-06 2012-03-28 电子科技大学 一种具有温度采样和过温保护功能的复合vdmos器件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4730228A (en) * 1986-03-21 1988-03-08 Siemens Aktiengesellschaft Overtemperature detection of power semiconductor components
JP2552880B2 (ja) * 1986-11-12 1996-11-13 シリコニックス・インコーポレイテッド 垂直ｄｍｏｓセル構造
US4896196A (en) * 1986-11-12 1990-01-23 Siliconix Incorporated Vertical DMOS power transistor with an integral operating condition sensor
JP2521783B2 (ja) * 1987-09-28 1996-08-07 三菱電機株式会社 半導体装置およびその製造方法
US4931844A (en) * 1988-03-09 1990-06-05 Ixys Corporation High power transistor with voltage, current, power, resistance, and temperature sensing capability
US4924111A (en) * 1988-10-31 1990-05-08 Motorola, Inc. Microprocessor layout minimizing temperature and current effects
US5034796A (en) * 1989-06-07 1991-07-23 Ixys Corporation Simplified current sensing structure for MOS power devices
JP2503670B2 (ja) * 1989-07-26 1996-06-05 三菱電機株式会社 半導体装置
WO1991006839A1 (de) * 1989-11-04 1991-05-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integrierbare temperatursensorschaltung
US5063307A (en) * 1990-09-20 1991-11-05 Ixys Corporation Insulated gate transistor devices with temperature and current sensor

Also Published As

Publication number Publication date
EP0561461A3 (de) 1994-01-12
JPH0677409A (ja) 1994-03-18
JP3315456B2 (ja) 2002-08-19
KR930020155A (ko) 1993-10-19
GB9206058D0 (en) 1992-05-06
DE69325120T2 (de) 1999-11-25
KR100241636B1 (ko) 2000-03-02
EP0561461B1 (de) 1999-06-02
US5434443A (en) 1995-07-18
EP0561461A2 (de) 1993-09-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: VOLMER, G., DIPL.-ING., PAT.-ANW., 52066 AACHEN

8339 Ceased/non-payment of the annual fee