DE602006021740D1 - Mikroelektronische schaltung ausgestattet mit einer thermischen schutzschaltung und thermische schutzmethode für eine mikroelektronische schaltung - Google Patents
Mikroelektronische schaltung ausgestattet mit einer thermischen schutzschaltung und thermische schutzmethode für eine mikroelektronische schaltungInfo
- Publication number
- DE602006021740D1 DE602006021740D1 DE602006021740T DE602006021740T DE602006021740D1 DE 602006021740 D1 DE602006021740 D1 DE 602006021740D1 DE 602006021740 T DE602006021740 T DE 602006021740T DE 602006021740 T DE602006021740 T DE 602006021740T DE 602006021740 D1 DE602006021740 D1 DE 602006021740D1
- Authority
- DE
- Germany
- Prior art keywords
- thermal protection
- microelectronic circuit
- protection method
- microelectronic
- circuit equipped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/569—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
- G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/441—Protection of an amplifier being implemented by clamping means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/468—Indexing scheme relating to amplifiers the temperature being sensed
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/78—A comparator being used in a controlling circuit of an amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06118479A EP1887333B1 (de) | 2006-08-04 | 2006-08-04 | Mikroelektronische schaltung ausgestattet mit einer thermischen schutzschaltung und thermische schutzmethode für eine mikroelektronische schaltung |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006021740D1 true DE602006021740D1 (de) | 2011-06-16 |
Family
ID=37450911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006021740T Active DE602006021740D1 (de) | 2006-08-04 | 2006-08-04 | Mikroelektronische schaltung ausgestattet mit einer thermischen schutzschaltung und thermische schutzmethode für eine mikroelektronische schaltung |
Country Status (3)
Country | Link |
---|---|
US (1) | US7626799B2 (de) |
EP (1) | EP1887333B1 (de) |
DE (1) | DE602006021740D1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4992572B2 (ja) * | 2007-06-26 | 2012-08-08 | ブラザー工業株式会社 | 電力供給遮断回路及び液滴吐出装置 |
JP5053421B2 (ja) * | 2010-06-16 | 2012-10-17 | 矢崎総業株式会社 | 信号判定システム及び温度判定システム |
US8668384B2 (en) * | 2010-10-07 | 2014-03-11 | Raytheon Company | System and method for detecting the temperature of an electrophoretic display device |
EP2816438B1 (de) * | 2013-06-20 | 2017-11-15 | Dialog Semiconductor GmbH | Aktive Klemmen für mehrstufige Verstärker in Über-/Unterspannungszuständen |
EP3223109B1 (de) * | 2014-11-20 | 2022-04-27 | Beijing Vanchip Testing Technologies Co., Ltd. | Leistungsregelungsverfahren, vorrichtung und kommunikationsendgerät zur verbesserung des schaltspektrums eines leistungsverstärkers |
CN205175565U (zh) | 2015-03-30 | 2016-04-20 | 意法半导体股份有限公司 | 温度传感器器件及感测系统 |
JP6793586B2 (ja) * | 2017-03-30 | 2020-12-02 | エイブリック株式会社 | ボルテージレギュレータ |
TWI646316B (zh) * | 2017-12-28 | 2019-01-01 | 新唐科技股份有限公司 | 溫度感測電路 |
US10833668B2 (en) * | 2019-03-07 | 2020-11-10 | Analog Devices International Unlimited Company | Integrated and distributed over temperature protection for power management switches |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4667265A (en) * | 1985-12-20 | 1987-05-19 | National Semiconductor Corporation | Adaptive thermal shutdown circuit |
US5070322A (en) * | 1989-07-19 | 1991-12-03 | Fuji Electric Co., Ltd. | An overheating detection circuit including a reversely biased junction having a temperature dependent reverse leakage current for detecting overheating of a power integrated circuit |
US5355123A (en) * | 1990-07-17 | 1994-10-11 | Fuji Electric Co., Ltd. | Overheating detection circuit for detecting overheating of a power device |
EP0488088B1 (de) * | 1990-11-26 | 2000-08-02 | Fuji Electric Co., Ltd. | Übertemperatur-Detektorschaltung zur Detektierung der Übertemperatur einer Leistungsschaltung |
DE4117508A1 (de) | 1991-05-24 | 1992-11-26 | Schering Ag | Substituierte benzthiazolderivate, verfahren zu ihrer herstellung und ihre verwendung als mittel mit herbizider wirkung |
GB9206058D0 (en) | 1992-03-20 | 1992-05-06 | Philips Electronics Uk Ltd | A semiconductor switch and a temperature sensing circuit for such a switch |
JPH1146120A (ja) * | 1997-07-25 | 1999-02-16 | Mitsubishi Electric Corp | 差動増幅回路 |
US5955793A (en) | 1998-02-11 | 1999-09-21 | Therm-O-Disc, Incorporated | High sensitivity diode temperature sensor with adjustable current source |
JP3656412B2 (ja) * | 1998-07-03 | 2005-06-08 | 株式会社日立製作所 | 車両用電力制御装置 |
JP2001045655A (ja) * | 1999-07-28 | 2001-02-16 | Fujitsu Ltd | 温度スイッチ回路 |
-
2006
- 2006-08-04 DE DE602006021740T patent/DE602006021740D1/de active Active
- 2006-08-04 EP EP06118479A patent/EP1887333B1/de not_active Expired - Fee Related
-
2007
- 2007-08-02 US US11/832,774 patent/US7626799B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1887333A1 (de) | 2008-02-13 |
US20080030914A1 (en) | 2008-02-07 |
EP1887333A3 (de) | 2008-12-17 |
EP1887333B1 (de) | 2011-05-04 |
US7626799B2 (en) | 2009-12-01 |
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