DE69323484D1 - Verfahren und Schaltung zur Tunneleffektprogrammierung eines MOSFETs mit schwebendem Gatter - Google Patents
Verfahren und Schaltung zur Tunneleffektprogrammierung eines MOSFETs mit schwebendem GatterInfo
- Publication number
- DE69323484D1 DE69323484D1 DE69323484T DE69323484T DE69323484D1 DE 69323484 D1 DE69323484 D1 DE 69323484D1 DE 69323484 T DE69323484 T DE 69323484T DE 69323484 T DE69323484 T DE 69323484T DE 69323484 D1 DE69323484 D1 DE 69323484D1
- Authority
- DE
- Germany
- Prior art keywords
- programming
- circuit
- floating gate
- tunnel effect
- gate mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3477—Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP93830172A EP0621603B1 (de) | 1993-04-22 | 1993-04-22 | Verfahren und Schaltung zur Tunneleffektprogrammierung eines MOSFETs mit schwebendem Gatter |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69323484D1 true DE69323484D1 (de) | 1999-03-25 |
DE69323484T2 DE69323484T2 (de) | 1999-08-26 |
Family
ID=8215151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69323484T Expired - Fee Related DE69323484T2 (de) | 1993-04-22 | 1993-04-22 | Verfahren und Schaltung zur Tunneleffektprogrammierung eines MOSFETs mit schwebendem Gatter |
Country Status (4)
Country | Link |
---|---|
US (1) | US5493141A (de) |
EP (1) | EP0621603B1 (de) |
JP (1) | JPH07122081A (de) |
DE (1) | DE69323484T2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3635681B2 (ja) * | 1994-07-15 | 2005-04-06 | ソニー株式会社 | バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法 |
DE19518728C2 (de) * | 1995-05-22 | 1998-12-24 | Siemens Ag | Konstantstromquelle mit einer EEPROM-Zelle |
US5930171A (en) * | 1995-05-22 | 1999-07-27 | Siemens Aktiengesellschaft | Constant-current source with an EEPROM cell |
FR2738386B1 (fr) * | 1995-09-05 | 1997-10-24 | Sgs Thomson Microelectronics | Procede et circuit de programmation et d'effacement d'une memoire |
KR980005016A (ko) * | 1996-06-29 | 1998-03-30 | 김주용 | 플래쉬 메모리 소자의 소거방법 |
US5835413A (en) * | 1996-12-20 | 1998-11-10 | Intel Corporation | Method for improved data retention in a nonvolatile writeable memory by sensing and reprogramming cell voltage levels |
US6330347B1 (en) | 1997-02-19 | 2001-12-11 | Stmicroelectronics S.R.L. | Method and device for identifying fingerprints using an analog flash memory |
DE60006529T2 (de) * | 1999-06-02 | 2004-09-23 | Arizona State University, Tempe | Stromgesteuerter feldeffekttransistor |
US6864131B2 (en) * | 1999-06-02 | 2005-03-08 | Arizona State University | Complementary Schottky junction transistors and methods of forming the same |
US7589007B2 (en) * | 1999-06-02 | 2009-09-15 | Arizona Board Of Regents For And On Behalf Of Arizona State University | MESFETs integrated with MOSFETs on common substrate and methods of forming the same |
US6521958B1 (en) * | 1999-08-26 | 2003-02-18 | Micron Technology, Inc. | MOSFET technology for programmable address decode and correction |
WO2002056316A1 (fr) * | 2001-01-12 | 2002-07-18 | Hitachi, Ltd. | Memoire remanente a semi-conducteur |
US6674667B2 (en) * | 2001-02-13 | 2004-01-06 | Micron Technology, Inc. | Programmable fuse and antifuse and method therefor |
JP3683206B2 (ja) | 2001-11-08 | 2005-08-17 | 沖電気工業株式会社 | 不揮発性半導体記憶装置およびその書き込み方法 |
TW519734B (en) * | 2001-12-04 | 2003-02-01 | Macronix Int Co Ltd | Programming and erasing methods of non-volatile memory having nitride tunneling layer |
US8188785B2 (en) | 2010-02-04 | 2012-05-29 | Semiconductor Components Industries, Llc | Mixed-mode circuits and methods of producing a reference current and a reference voltage |
US8878511B2 (en) * | 2010-02-04 | 2014-11-04 | Semiconductor Components Industries, Llc | Current-mode programmable reference circuits and methods therefor |
US8680840B2 (en) * | 2010-02-11 | 2014-03-25 | Semiconductor Components Industries, Llc | Circuits and methods of producing a reference current or voltage |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3972059A (en) * | 1973-12-28 | 1976-07-27 | International Business Machines Corporation | Dielectric diode, fabrication thereof, and charge store memory therewith |
US4185319A (en) * | 1978-10-04 | 1980-01-22 | Rca Corp. | Non-volatile memory device |
JPS5619589A (en) * | 1979-07-26 | 1981-02-24 | Fujitsu Ltd | Amplifier circuit of internal signal |
US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
US4797856A (en) * | 1987-04-16 | 1989-01-10 | Intel Corporation | Self-limiting erase scheme for EEPROM |
US5253196A (en) * | 1991-01-09 | 1993-10-12 | The United States Of America As Represented By The Secretary Of The Navy | MOS analog memory with injection capacitors |
US5220533A (en) * | 1991-11-06 | 1993-06-15 | Altera Corporation | Method and apparatus for preventing overerasure in a flash cell |
US5138576A (en) * | 1991-11-06 | 1992-08-11 | Altera Corporation | Method and apparatus for erasing an array of electrically erasable EPROM cells |
-
1993
- 1993-04-22 DE DE69323484T patent/DE69323484T2/de not_active Expired - Fee Related
- 1993-04-22 EP EP93830172A patent/EP0621603B1/de not_active Expired - Lifetime
-
1994
- 1994-04-21 JP JP8326294A patent/JPH07122081A/ja active Pending
- 1994-04-21 US US08/231,071 patent/US5493141A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0621603A1 (de) | 1994-10-26 |
EP0621603B1 (de) | 1999-02-10 |
DE69323484T2 (de) | 1999-08-26 |
US5493141A (en) | 1996-02-20 |
JPH07122081A (ja) | 1995-05-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |