DE69319901D1 - Methode zur herstellung eines lithographischen musters in einem verfahren zur herstellung von halbleitervorrichtungen - Google Patents

Methode zur herstellung eines lithographischen musters in einem verfahren zur herstellung von halbleitervorrichtungen

Info

Publication number
DE69319901D1
DE69319901D1 DE69319901T DE69319901T DE69319901D1 DE 69319901 D1 DE69319901 D1 DE 69319901D1 DE 69319901 T DE69319901 T DE 69319901T DE 69319901 T DE69319901 T DE 69319901T DE 69319901 D1 DE69319901 D1 DE 69319901D1
Authority
DE
Germany
Prior art keywords
feature
edge
producing
radiation
mask image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69319901T
Other languages
English (en)
Other versions
DE69319901T2 (de
Inventor
Jang Chen
James Matthews
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML MaskTools Netherlands BV
Original Assignee
Microunity Systems Engineering Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25341795&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69319901(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Microunity Systems Engineering Inc filed Critical Microunity Systems Engineering Inc
Publication of DE69319901D1 publication Critical patent/DE69319901D1/de
Application granted granted Critical
Publication of DE69319901T2 publication Critical patent/DE69319901T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Materials For Photolithography (AREA)
DE69319901T 1992-04-06 1993-03-29 Methode zur herstellung eines lithographischen musters in einem verfahren zur herstellung von halbleitervorrichtungen Expired - Fee Related DE69319901T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86379192A 1992-04-06 1992-04-06
PCT/US1993/003126 WO1993020482A1 (en) 1992-04-06 1993-03-29 Method for forming a lithographic pattern in a process for manufacturing semiconductor devices

Publications (2)

Publication Number Publication Date
DE69319901D1 true DE69319901D1 (de) 1998-08-27
DE69319901T2 DE69319901T2 (de) 1999-03-25

Family

ID=25341795

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69319901T Expired - Fee Related DE69319901T2 (de) 1992-04-06 1993-03-29 Methode zur herstellung eines lithographischen musters in einem verfahren zur herstellung von halbleitervorrichtungen

Country Status (8)

Country Link
US (1) US5340700A (de)
EP (1) EP0634028B1 (de)
JP (1) JP3495734B2 (de)
AT (1) ATE168791T1 (de)
AU (1) AU4277893A (de)
CA (1) CA2132005A1 (de)
DE (1) DE69319901T2 (de)
WO (1) WO1993020482A1 (de)

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US5821014A (en) * 1997-02-28 1998-10-13 Microunity Systems Engineering, Inc. Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
US6083272A (en) * 1997-06-13 2000-07-04 Advanced Micro Devices, Inc. Method of adjusting currents on a semiconductor device having transistors of varying density
US5959325A (en) * 1997-08-21 1999-09-28 International Business Machines Corporation Method for forming cornered images on a substrate and photomask formed thereby
US6578188B1 (en) 1997-09-17 2003-06-10 Numerical Technologies, Inc. Method and apparatus for a network-based mask defect printability analysis system
US6757645B2 (en) 1997-09-17 2004-06-29 Numerical Technologies, Inc. Visual inspection and verification system
US6370679B1 (en) 1997-09-17 2002-04-09 Numerical Technologies, Inc. Data hierarchy layout correction and verification method and apparatus
US7107571B2 (en) * 1997-09-17 2006-09-12 Synopsys, Inc. Visual analysis and verification system using advanced tools
US7617474B2 (en) * 1997-09-17 2009-11-10 Synopsys, Inc. System and method for providing defect printability analysis of photolithographic masks with job-based automation
US6470489B1 (en) 1997-09-17 2002-10-22 Numerical Technologies, Inc. Design rule checking system and method
US7093229B2 (en) * 1997-09-17 2006-08-15 Synopsys, Inc. System and method for providing defect printability analysis of photolithographic masks with job-based automation
US6453452B1 (en) 1997-12-12 2002-09-17 Numerical Technologies, Inc. Method and apparatus for data hierarchy maintenance in a system for mask description
US6174741B1 (en) 1997-12-19 2001-01-16 Siemens Aktiengesellschaft Method for quantifying proximity effect by measuring device performance
US6081658A (en) * 1997-12-31 2000-06-27 Avant! Corporation Proximity correction system for wafer lithography
JPH11282151A (ja) * 1998-03-27 1999-10-15 Mitsubishi Electric Corp マスクパターン検証装置、その方法およびそのプログラムを記録した媒体
US6383719B1 (en) 1998-05-19 2002-05-07 International Business Machines Corporation Process for enhanced lithographic imaging
US6218089B1 (en) 1998-05-22 2001-04-17 Micron Technology, Inc. Photolithographic method
US6330708B1 (en) 1998-09-17 2001-12-11 International Business Machines Corporation Method for preparing command files for photomask production
US6120952A (en) * 1998-10-01 2000-09-19 Micron Technology, Inc. Methods of reducing proximity effects in lithographic processes
US6214494B1 (en) 1998-10-07 2001-04-10 International Business Machines Corporation Serif mask design methodology based on enhancing high spatial frequency contribution for improved printability
JP3385325B2 (ja) 1998-11-09 2003-03-10 日本電気株式会社 格子パターンの露光方法および露光装置
US6467076B1 (en) * 1999-04-30 2002-10-15 Nicolas Bailey Cobb Method and apparatus for submicron IC design
US6376149B2 (en) 1999-05-26 2002-04-23 Yale University Methods and compositions for imaging acids in chemically amplified photoresists using pH-dependent fluorophores
US6238850B1 (en) 1999-08-23 2001-05-29 International Business Machines Corp. Method of forming sharp corners in a photoresist layer
US6251546B1 (en) 1999-09-16 2001-06-26 Agere Systems Guardian Corp. Method of fabricating devices using an attenuated phase-shifting mask and an attenuated phase-shifting mask
US6596466B1 (en) 2000-01-25 2003-07-22 Cypress Semiconductor Corporation Contact structure and method of forming a contact structure
US6584609B1 (en) * 2000-02-28 2003-06-24 Numerical Technologies, Inc. Method and apparatus for mixed-mode optical proximity correction
US6523162B1 (en) 2000-08-02 2003-02-18 Numerical Technologies, Inc. General purpose shape-based layout processing scheme for IC layout modifications
US6539521B1 (en) 2000-09-29 2003-03-25 Numerical Technologies, Inc. Dissection of corners in a fabrication layout for correcting proximity effects
US6792590B1 (en) 2000-09-29 2004-09-14 Numerical Technologies, Inc. Dissection of edges with projection points in a fabrication layout for correcting proximity effects
US6453457B1 (en) 2000-09-29 2002-09-17 Numerical Technologies, Inc. Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
US6625801B1 (en) 2000-09-29 2003-09-23 Numerical Technologies, Inc. Dissection of printed edges from a fabrication layout for correcting proximity effects
US6665856B1 (en) 2000-12-01 2003-12-16 Numerical Technologies, Inc. Displacing edge segments on a fabrication layout based on proximity effects model amplitudes for correcting proximity effects
US6653026B2 (en) 2000-12-20 2003-11-25 Numerical Technologies, Inc. Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
US6578190B2 (en) 2001-01-11 2003-06-10 International Business Machines Corporation Process window based optical proximity correction of lithographic images
US6873720B2 (en) * 2001-03-20 2005-03-29 Synopsys, Inc. System and method of providing mask defect printability analysis
US6925202B2 (en) 2001-03-20 2005-08-02 Synopsys, Inc. System and method of providing mask quality control
US6606738B1 (en) * 2001-03-30 2003-08-12 Advanced Micro Device, Inc. Analytical model for predicting the operating process window for lithographic patterning techniques based on photoresist trim technology
US6789237B1 (en) * 2001-05-11 2004-09-07 Northwestern University Efficient model order reduction via multi-point moment matching
US6560766B2 (en) 2001-07-26 2003-05-06 Numerical Technologies, Inc. Method and apparatus for analyzing a layout using an instance-based representation
US7014955B2 (en) 2001-08-28 2006-03-21 Synopsys, Inc. System and method for indentifying dummy features on a mask layer
US6684382B2 (en) 2001-08-31 2004-01-27 Numerical Technologies, Inc. Microloading effect correction
US6670082B2 (en) 2001-10-09 2003-12-30 Numerical Technologies, Inc. System and method for correcting 3D effects in an alternating phase-shifting mask
JP4171647B2 (ja) * 2001-11-28 2008-10-22 エーエスエムエル マスクツールズ ビー．ブイ． プロセス・ラチチュードを改善するために利用した補助形態を除去する方法
SE0104238D0 (sv) * 2001-12-14 2001-12-14 Micronic Laser Systems Ab Method and apparatus for patterning a workpiece
US7159197B2 (en) * 2001-12-31 2007-01-02 Synopsys, Inc. Shape-based geometry engine to perform smoothing and other layout beautification operations
DE10230532B4 (de) * 2002-07-05 2007-03-08 Infineon Technologies Ag Verfahren zum Bestimmen des Aufbaus einer Maske zum Mikrostrukturieren von Halbleitersubstraten mittels Fotolithographie
US7172838B2 (en) * 2002-09-27 2007-02-06 Wilhelm Maurer Chromeless phase mask layout generation
US6964032B2 (en) * 2003-02-28 2005-11-08 International Business Machines Corporation Pitch-based subresolution assist feature design
US7354681B2 (en) * 2003-06-30 2008-04-08 Asml Masktools B.V. Scattering bar OPC application method for sub-half wavelength lithography patterning
US20050112474A1 (en) * 2003-11-20 2005-05-26 Micronic Laser Systems Ab Method involving a mask or a reticle
KR100773665B1 (ko) * 2003-11-20 2007-11-05 마이크로닉 레이저 시스템즈 에이비 개선된 ｃｄ 균일도를 이용하여 패턴을 프린팅하는 방법 및장치
EP1719018A1 (de) * 2004-02-25 2006-11-08 Micronic Laser Systems Ab Verfahren zum belichten von strukturen und zum emulieren von masken bei der optischen maskenlosen lithographie
US7811720B2 (en) * 2004-05-10 2010-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Utilizing compensation features in photolithography for semiconductor device fabrication
US8132130B2 (en) * 2005-06-22 2012-03-06 Asml Masktools B.V. Method, program product and apparatus for performing mask feature pitch decomposition for use in a multiple exposure process
US20080102380A1 (en) * 2006-10-30 2008-05-01 Mangat Pawitter S High density lithographic process
WO2009130603A2 (en) * 2008-04-24 2009-10-29 Micronic Laser Systems Ab Spatial light modulator with structured mirror surfaces
US8539395B2 (en) 2010-03-05 2013-09-17 Micronic Laser Systems Ab Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image
US10976657B2 (en) * 2018-08-31 2021-04-13 Canon Kabushiki Kaisha System and method for illuminating edges of an imprint field with a gradient dosage

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DE3118802A1 (de) * 1980-05-14 1982-02-25 Canon K.K., Tokyo Druckuebertragungsgeraet
EP0126786B1 (de) * 1983-05-25 1987-04-01 Ibm Deutschland Gmbh Verfahren zum Übertragen eines Musters in eine strahlungsempfindliche Schicht
US4835088A (en) * 1987-12-22 1989-05-30 Submicron Structures, Inc. Method and apparatus for generating high-resolution images
DE69225347T2 (de) * 1991-02-19 1998-09-03 Fujitsu Ltd Projektionsbelichtungsmethode und optische Maske für die Projektionsbelichtung

Also Published As

Publication number Publication date
ATE168791T1 (de) 1998-08-15
JPH07505507A (ja) 1995-06-15
CA2132005A1 (en) 1993-10-14
US5340700A (en) 1994-08-23
EP0634028B1 (de) 1998-07-22
JP3495734B2 (ja) 2004-02-09
WO1993020482A1 (en) 1993-10-14
AU4277893A (en) 1993-11-08
EP0634028A1 (de) 1995-01-18
DE69319901T2 (de) 1999-03-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ASML MASKTOOLS NETHERLANDS B.V., VELDHOVEN, NL

8328 Change in the person/name/address of the agent

Representative=s name: WUESTHOFF & WUESTHOFF PATENT- UND RECHTSANWAELTE, 8

8327 Change in the person/name/address of the patent owner

Owner name: ASML MASKTOOLS B.V., VELDHOVEN, NL

8339 Ceased/non-payment of the annual fee