DE69316810D1 - SiGe-SOI MOSFET and manufacturing method - Google Patents

SiGe-SOI MOSFET and manufacturing method

Info

Publication number
DE69316810D1
DE69316810D1 DE69316810T DE69316810T DE69316810D1 DE 69316810 D1 DE69316810 D1 DE 69316810D1 DE 69316810 T DE69316810 T DE 69316810T DE 69316810 T DE69316810 T DE 69316810T DE 69316810 D1 DE69316810 D1 DE 69316810D1
Authority
DE
Germany
Prior art keywords
sige
manufacturing
soi mosfet
soi
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69316810T
Other languages
German (de)
Other versions
DE69316810T2 (en
Inventor
Joachim N Burghartz
Bernard Meyerson
Yaun-Chen Sun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69316810D1 publication Critical patent/DE69316810D1/en
Publication of DE69316810T2 publication Critical patent/DE69316810T2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H01L29/78687Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
DE69316810T 1992-08-10 1993-07-16 SiGe-SOI MOSFET and manufacturing method Expired - Lifetime DE69316810T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/927,901 US5461250A (en) 1992-08-10 1992-08-10 SiGe thin film or SOI MOSFET and method for making the same

Publications (2)

Publication Number Publication Date
DE69316810D1 true DE69316810D1 (en) 1998-03-12
DE69316810T2 DE69316810T2 (en) 1998-08-13

Family

ID=25455427

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69316810T Expired - Lifetime DE69316810T2 (en) 1992-08-10 1993-07-16 SiGe-SOI MOSFET and manufacturing method

Country Status (4)

Country Link
US (1) US5461250A (en)
EP (1) EP0587520B1 (en)
JP (1) JP2500047B2 (en)
DE (1) DE69316810T2 (en)

Families Citing this family (197)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691249B2 (en) * 1991-01-10 1994-11-14 インターナショナル・ビジネス・マシーンズ・コーポレイション Modulation-doped MISFET and manufacturing method thereof
JP3144032B2 (en) * 1992-03-30 2001-03-07 ソニー株式会社 Thin film transistor and method of manufacturing the same
JP3613594B2 (en) * 1993-08-19 2005-01-26 株式会社ルネサステクノロジ Semiconductor element and semiconductor memory device using the same
JPH07321323A (en) * 1994-05-24 1995-12-08 Matsushita Electric Ind Co Ltd Thin film transistor and its manufacturing method
KR0135804B1 (en) * 1994-06-13 1998-04-24 김광호 Silicon on insulator transistor
US5604368A (en) * 1994-07-15 1997-02-18 International Business Machines Corporation Self-aligned double-gate MOSFET by selective lateral epitaxy
US5985703A (en) * 1994-10-24 1999-11-16 Banerjee; Sanjay Method of making thin film transistors
US5828084A (en) * 1995-03-27 1998-10-27 Sony Corporation High performance poly-SiGe thin film transistor
JP2616741B2 (en) * 1995-04-27 1997-06-04 日本電気株式会社 Method for manufacturing polycrystalline silicon-germanium thin film transistor
KR100206877B1 (en) * 1995-12-28 1999-07-01 구본준 A method of fabricating a thin film transistor
US5793072A (en) * 1996-02-28 1998-08-11 International Business Machines Corporation Non-photosensitive, vertically redundant 2-channel α-Si:H thin film transistor
US5943560A (en) * 1996-04-19 1999-08-24 National Science Council Method to fabricate the thin film transistor
US5879996A (en) * 1996-09-18 1999-03-09 Micron Technology, Inc. Silicon-germanium devices for CMOS formed by ion implantation and solid phase epitaxial regrowth
EP0838858B1 (en) * 1996-09-27 2002-05-15 Infineon Technologies AG CMOS integrated circuit and method of manufacturing the same
US6087239A (en) 1996-11-22 2000-07-11 Micron Technology, Inc. Disposable spacer and method of forming and using same
JP2877108B2 (en) * 1996-12-04 1999-03-31 日本電気株式会社 Semiconductor device and manufacturing method thereof
US5773331A (en) * 1996-12-17 1998-06-30 International Business Machines Corporation Method for making single and double gate field effect transistors with sidewall source-drain contacts
CA2295069A1 (en) * 1997-06-24 1998-12-30 Eugene A. Fitzgerald Controlling threading dislocation densities in ge on si using graded gesi layers and planarization
FR2765394B1 (en) * 1997-06-25 1999-09-24 France Telecom PROCESS FOR OBTAINING A SILICON-GERMANIUM GRID TRANSISTOR
FR2765393B1 (en) * 1997-06-25 2001-11-30 France Telecom PROCESS FOR ETCHING A POLYCRYSTALLINE SI1-XGEX LAYER OR A STACK OF A POLYCRYSTALLINE SI1-XGEX LAYER AND A POLYCRYSTALLINE SI LAYER, AND APPLICATION THEREOF TO MICROELECTRONICS
JP4104701B2 (en) 1997-06-26 2008-06-18 株式会社半導体エネルギー研究所 Semiconductor device
JP4282778B2 (en) * 1997-08-05 2009-06-24 株式会社半導体エネルギー研究所 Semiconductor device
JP4236722B2 (en) * 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JPH11233788A (en) * 1998-02-09 1999-08-27 Semiconductor Energy Lab Co Ltd Semiconductor device
US6004837A (en) * 1998-02-18 1999-12-21 International Business Machines Corporation Dual-gate SOI transistor
US6482684B1 (en) * 1998-03-27 2002-11-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a TFT with Ge seeded amorphous Si layer
US7227176B2 (en) 1998-04-10 2007-06-05 Massachusetts Institute Of Technology Etch stop layer system
US6057212A (en) * 1998-05-04 2000-05-02 International Business Machines Corporation Method for making bonded metal back-plane substrates
US6207530B1 (en) * 1998-06-19 2001-03-27 International Business Machines Corporation Dual gate FET and process
US7294535B1 (en) 1998-07-15 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7153729B1 (en) 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7084016B1 (en) * 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7282398B2 (en) * 1998-07-17 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
US6013936A (en) * 1998-08-06 2000-01-11 International Business Machines Corporation Double silicon-on-insulator device and method therefor
US6559036B1 (en) 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6159807A (en) * 1998-09-21 2000-12-12 International Business Machines Corporation Self-aligned dynamic threshold CMOS device
US6734498B2 (en) * 1998-10-02 2004-05-11 Intel Corporation Insulated channel field effect transistor with an electric field terminal region
JP3616514B2 (en) * 1998-11-17 2005-02-02 株式会社東芝 Semiconductor integrated circuit and manufacturing method thereof
US6218711B1 (en) * 1999-02-19 2001-04-17 Advanced Micro Devices, Inc. Raised source/drain process by selective sige epitaxy
US6350993B1 (en) 1999-03-12 2002-02-26 International Business Machines Corporation High speed composite p-channel Si/SiGe heterostructure for field effect devices
JP3955409B2 (en) * 1999-03-17 2007-08-08 株式会社ルネサステクノロジ Semiconductor memory device
JP4521542B2 (en) 1999-03-30 2010-08-11 ルネサスエレクトロニクス株式会社 Semiconductor device and semiconductor substrate
DE19924571C2 (en) * 1999-05-28 2001-03-15 Siemens Ag Method of manufacturing a double gate MOSFET transistor
US6339232B1 (en) * 1999-09-20 2002-01-15 Kabushika Kaisha Toshiba Semiconductor device
EP1102327B1 (en) * 1999-11-15 2007-10-03 Matsushita Electric Industrial Co., Ltd. Field effect semiconductor device
US6633066B1 (en) * 2000-01-07 2003-10-14 Samsung Electronics Co., Ltd. CMOS integrated circuit devices and substrates having unstrained silicon active layers
JP2003520444A (en) 2000-01-20 2003-07-02 アンバーウェーブ システムズ コーポレイション Low threading dislocation density lattice-mismatched epilayer that does not require high-temperature growth
US6602613B1 (en) 2000-01-20 2003-08-05 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
US6750130B1 (en) 2000-01-20 2004-06-15 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
KR100694331B1 (en) * 2000-02-29 2007-03-12 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Semiconductor device and method of manufacturing same
US6642115B1 (en) * 2000-05-15 2003-11-04 International Business Machines Corporation Double-gate FET with planarized surfaces and self-aligned silicides
US6982460B1 (en) * 2000-07-07 2006-01-03 International Business Machines Corporation Self-aligned gate MOSFET with separate gates
DE10025264A1 (en) * 2000-05-22 2001-11-29 Max Planck Gesellschaft Field effect transistor based on embedded cluster structures and method for its production
AU2001263211A1 (en) * 2000-05-26 2001-12-11 Amberwave Systems Corporation Buried channel strained silicon fet using an ion implanted doped layer
US6461945B1 (en) * 2000-06-22 2002-10-08 Advanced Micro Devices, Inc. Solid phase epitaxy process for manufacturing transistors having silicon/germanium channel regions
US6743680B1 (en) 2000-06-22 2004-06-01 Advanced Micro Devices, Inc. Process for manufacturing transistors having silicon/germanium channel regions
US7503975B2 (en) * 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
JP2004519090A (en) 2000-08-07 2004-06-24 アンバーウェーブ システムズ コーポレイション Gate technology for strained surface channel and strained buried channel MOSFET devices
US6521502B1 (en) 2000-08-07 2003-02-18 Advanced Micro Devices, Inc. Solid phase epitaxy activation process for source/drain junction extensions and halo regions
US6573126B2 (en) 2000-08-16 2003-06-03 Massachusetts Institute Of Technology Process for producing semiconductor article using graded epitaxial growth
US6716684B1 (en) * 2000-11-13 2004-04-06 Advanced Micro Devices, Inc. Method of making a self-aligned triple gate silicon-on-insulator device
JP4053232B2 (en) * 2000-11-20 2008-02-27 株式会社ルネサステクノロジ Semiconductor integrated circuit device and manufacturing method thereof
US6649480B2 (en) 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US6495402B1 (en) 2001-02-06 2002-12-17 Advanced Micro Devices, Inc. Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regions and method of manufacture
US6686630B2 (en) * 2001-02-07 2004-02-03 International Business Machines Corporation Damascene double-gate MOSFET structure and its fabrication method
EP1421607A2 (en) 2001-02-12 2004-05-26 ASM America, Inc. Improved process for deposition of semiconductor films
US6380590B1 (en) 2001-02-22 2002-04-30 Advanced Micro Devices, Inc. SOI chip having multiple threshold voltage MOSFETs by using multiple channel materials and method of fabricating same
US6475869B1 (en) 2001-02-26 2002-11-05 Advanced Micro Devices, Inc. Method of forming a double gate transistor having an epitaxial silicon/germanium channel region
US6410371B1 (en) * 2001-02-26 2002-06-25 Advanced Micro Devices, Inc. Method of fabrication of semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer
US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6724008B2 (en) 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6723661B2 (en) 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6709935B1 (en) 2001-03-26 2004-03-23 Advanced Micro Devices, Inc. Method of locally forming a silicon/geranium channel layer
US6603156B2 (en) * 2001-03-31 2003-08-05 International Business Machines Corporation Strained silicon on insulator structures
WO2002082514A1 (en) 2001-04-04 2002-10-17 Massachusetts Institute Of Technology A method for semiconductor device fabrication
US6670675B2 (en) * 2001-08-06 2003-12-30 International Business Machines Corporation Deep trench body SOI contacts with epitaxial layer formation
US6831292B2 (en) 2001-09-21 2004-12-14 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
WO2003028106A2 (en) 2001-09-24 2003-04-03 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
US6870225B2 (en) * 2001-11-02 2005-03-22 International Business Machines Corporation Transistor structure with thick recessed source/drain structures and fabrication process of same
JP3970011B2 (en) * 2001-12-11 2007-09-05 シャープ株式会社 Semiconductor device and manufacturing method thereof
US6610576B2 (en) * 2001-12-13 2003-08-26 International Business Machines Corporation Method for forming asymmetric dual gate transistor
US7060632B2 (en) 2002-03-14 2006-06-13 Amberwave Systems Corporation Methods for fabricating strained layers on semiconductor substrates
US6635909B2 (en) 2002-03-19 2003-10-21 International Business Machines Corporation Strained fin FETs structure and method
US6580132B1 (en) 2002-04-10 2003-06-17 International Business Machines Corporation Damascene double-gate FET
GB0210065D0 (en) * 2002-05-02 2002-06-12 Koninkl Philips Electronics Nv Electronic devices comprising bottom gate tft's and their manufacture
US7307273B2 (en) 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
US20030227057A1 (en) 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US7615829B2 (en) 2002-06-07 2009-11-10 Amberwave Systems Corporation Elevated source and drain elements for strained-channel heterojuntion field-effect transistors
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
JP2004014856A (en) * 2002-06-07 2004-01-15 Sharp Corp Method for manufacturing semiconductor substrate and semiconductor device
US7335545B2 (en) 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
AU2003247513A1 (en) 2002-06-10 2003-12-22 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
DE10229003B4 (en) 2002-06-28 2014-02-13 Advanced Micro Devices, Inc. A method of fabricating an SOI field effect transistor element having a recombination region
AU2003267981A1 (en) * 2002-06-28 2004-01-19 Advanced Micro Devices, Inc. Soi field effect transistor element having a recombination region and method of forming same
JP3621695B2 (en) * 2002-07-29 2005-02-16 株式会社東芝 Semiconductor device and element forming substrate
US6605514B1 (en) 2002-07-31 2003-08-12 Advanced Micro Devices, Inc. Planar finFET patterning using amorphous carbon
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
JP2004079887A (en) 2002-08-21 2004-03-11 Renesas Technology Corp Semiconductor device
AU2003274922A1 (en) 2002-08-23 2004-03-11 Amberwave Systems Corporation Semiconductor heterostructures having reduced dislocation pile-ups and related methods
US7594967B2 (en) 2002-08-30 2009-09-29 Amberwave Systems Corporation Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
US6800910B2 (en) * 2002-09-30 2004-10-05 Advanced Micro Devices, Inc. FinFET device incorporating strained silicon in the channel region
US6873015B2 (en) * 2002-10-02 2005-03-29 Micron Technology, Inc. Semiconductor constructions comprising three-dimensional thin film transistor devices and resistors
US20060154423A1 (en) * 2002-12-19 2006-07-13 Fried David M Methods of forming structure and spacer and related finfet
US6774015B1 (en) * 2002-12-19 2004-08-10 International Business Machines Corporation Strained silicon-on-insulator (SSOI) and method to form the same
US7001837B2 (en) * 2003-01-17 2006-02-21 Advanced Micro Devices, Inc. Semiconductor with tensile strained substrate and method of making the same
EP2337062A3 (en) 2003-01-27 2016-05-04 Taiwan Semiconductor Manufacturing Company, Limited Method for making semiconductor structures with structural homogeneity
EP1602125B1 (en) 2003-03-07 2019-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Shallow trench isolation process
US6900502B2 (en) * 2003-04-03 2005-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Strained channel on insulator device
US6882025B2 (en) * 2003-04-25 2005-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Strained-channel transistor and methods of manufacture
US6867433B2 (en) * 2003-04-30 2005-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors
US7049660B2 (en) * 2003-05-30 2006-05-23 International Business Machines Corporation High-quality SGOI by oxidation near the alloy melting temperature
WO2004107452A1 (en) * 2003-05-30 2004-12-09 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for manufacturing same
WO2004109767A2 (en) * 2003-06-02 2004-12-16 Yale University High performance polycrystalline transistors
US7045401B2 (en) * 2003-06-23 2006-05-16 Sharp Laboratories Of America, Inc. Strained silicon finFET device
US20050012087A1 (en) * 2003-07-15 2005-01-20 Yi-Ming Sheu Self-aligned MOSFET having an oxide region below the channel
JP2007505477A (en) * 2003-07-23 2007-03-08 エーエスエム アメリカ インコーポレイテッド Silicon-on-insulator structures and SiGe deposition on bulk substrates
US6940705B2 (en) * 2003-07-25 2005-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitor with enhanced performance and method of manufacture
US6936881B2 (en) * 2003-07-25 2005-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitor that includes high permittivity capacitor dielectric
US7078742B2 (en) 2003-07-25 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Strained-channel semiconductor structure and method of fabricating the same
US7301206B2 (en) * 2003-08-01 2007-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors
US7101742B2 (en) * 2003-08-12 2006-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Strained channel complementary field-effect transistors and methods of manufacture
US6974755B2 (en) * 2003-08-15 2005-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structure with nitrogen-containing liner and methods of manufacture
US20050035369A1 (en) * 2003-08-15 2005-02-17 Chun-Chieh Lin Structure and method of forming integrated circuits utilizing strained channel transistors
US7112495B2 (en) * 2003-08-15 2006-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
US7071052B2 (en) 2003-08-18 2006-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Resistor with reduced leakage
US20050070070A1 (en) * 2003-09-29 2005-03-31 International Business Machines Method of forming strained silicon on insulator
US6902965B2 (en) * 2003-10-31 2005-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Strained silicon structure
US7964925B2 (en) * 2006-10-13 2011-06-21 Hewlett-Packard Development Company, L.P. Photodiode module and apparatus including multiple photodiode modules
US7888201B2 (en) * 2003-11-04 2011-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors
SG151102A1 (en) * 2003-12-18 2009-04-30 Taiwan Semiconductor Mfg Strained channel complementary field-effect transistors and methods of manufacture
KR100975523B1 (en) * 2003-12-30 2010-08-13 삼성전자주식회사 Semiconductor device with modified mobility and thin film transistor having the same
US7224007B1 (en) * 2004-01-12 2007-05-29 Advanced Micro Devices, Inc. Multi-channel transistor with tunable hot carrier effect
US7105393B2 (en) * 2004-01-30 2006-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Strained silicon layer fabrication with reduced dislocation defect density
US20050186722A1 (en) * 2004-02-25 2005-08-25 Kuan-Lun Cheng Method and structure for CMOS device with stress relaxed by ion implantation of carbon or oxygen containing ions
US7504693B2 (en) * 2004-04-23 2009-03-17 International Business Machines Corporation Dislocation free stressed channels in bulk silicon and SOI CMOS devices by gate stress engineering
US20050266632A1 (en) * 2004-05-26 2005-12-01 Yun-Hsiu Chen Integrated circuit with strained and non-strained transistors, and method of forming thereof
US7495266B2 (en) * 2004-06-16 2009-02-24 Massachusetts Institute Of Technology Strained silicon-on-silicon by wafer bonding and layer transfer
US20050280081A1 (en) * 2004-06-16 2005-12-22 Massachusetts Institute Of Technology Semiconductor devices having bonded interfaces and methods for making the same
US7187059B2 (en) * 2004-06-24 2007-03-06 International Business Machines Corporation Compressive SiGe <110> growth and structure of MOSFET devices
US7151285B2 (en) * 2004-06-30 2006-12-19 Micron Technology, Inc. Transistor structures and transistors with a germanium-containing channel
US8669145B2 (en) 2004-06-30 2014-03-11 International Business Machines Corporation Method and structure for strained FinFET devices
DE102004033147B4 (en) * 2004-07-08 2007-05-03 Infineon Technologies Ag Planar double gate transistor and method of fabricating a planar double gate transistor
CN100505185C (en) * 2004-09-02 2009-06-24 Nxp股份有限公司 Method of manufacturing a semiconductor device
TW200629427A (en) * 2004-11-10 2006-08-16 Gil Asa Transistor structure and method of manufacturing thereof
US20060105533A1 (en) * 2004-11-16 2006-05-18 Chong Yung F Method for engineering hybrid orientation/material semiconductor substrate
US20060113603A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid semiconductor-on-insulator structures and related methods
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
US20060118869A1 (en) * 2004-12-03 2006-06-08 Je-Hsiung Lan Thin-film transistors and processes for forming the same
FR2881877B1 (en) * 2005-02-04 2007-08-31 Soitec Silicon On Insulator MULTI-LAYER CHANNEL FIELD EFFECT TRANSISTOR WITH MULTI-LAYER CHANNEL
FR2881878A1 (en) * 2005-02-04 2006-08-11 Soitec Silicon On Insulator Multi-gate e.g. double gate, field effect transistor, has channel with multilayer structure that has conditioning layers arranged to have electric properties capable of constraining adjacent conducting layer to confine charge carriers
JP4405412B2 (en) * 2005-03-02 2010-01-27 株式会社東芝 Semiconductor integrated circuit
US7709313B2 (en) * 2005-07-19 2010-05-04 International Business Machines Corporation High performance capacitors in planar back gates CMOS
US7901968B2 (en) * 2006-03-23 2011-03-08 Asm America, Inc. Heteroepitaxial deposition over an oxidized surface
FR2883661B1 (en) * 2006-05-04 2008-04-25 Soitec Silicon On Insulator MULTI-LAYER CHANNEL FIELD EFFECT TRANSISTOR WITH MULTI-LAYER CHANNEL
US7646071B2 (en) * 2006-05-31 2010-01-12 Intel Corporation Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory
US7772060B2 (en) 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
DE102006028543B4 (en) * 2006-06-21 2010-02-18 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors in a high performance BICMOS process
US7704838B2 (en) * 2006-08-25 2010-04-27 Freescale Semiconductor, Inc. Method for forming an independent bottom gate connection for buried interconnection including bottom gate of a planar double gate MOSFET
US8530972B2 (en) * 2006-08-25 2013-09-10 Freescale Semiconductor, Inc. Double gate MOSFET with coplanar surfaces for contacting source, drain, and bottom gate
US7442599B2 (en) * 2006-09-15 2008-10-28 Sharp Laboratories Of America, Inc. Silicon/germanium superlattice thermal sensor
US7777268B2 (en) * 2006-10-10 2010-08-17 Schiltron Corp. Dual-gate device
US8558278B2 (en) 2007-01-16 2013-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Strained transistor with optimized drive current and method of forming
US7943961B2 (en) 2008-03-13 2011-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Strain bars in stressed layers of MOS devices
US7808051B2 (en) 2008-09-29 2010-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Standard cell without OD space effect in Y-direction
JP5532803B2 (en) * 2009-09-30 2014-06-25 ソニー株式会社 Semiconductor device and display device
KR101926646B1 (en) 2010-04-16 2018-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Electrode for energy storage device and method for manufacturing the same
US9461169B2 (en) 2010-05-28 2016-10-04 Globalfoundries Inc. Device and method for fabricating thin semiconductor channel and buried strain memorization layer
US8816392B2 (en) * 2010-07-01 2014-08-26 Institute of Microelectronics, Chinese Academy of Sciences Semiconductor device having gate structures to reduce the short channel effects
US9087687B2 (en) 2011-12-23 2015-07-21 International Business Machines Corporation Thin heterostructure channel device
US9127345B2 (en) 2012-03-06 2015-09-08 Asm America, Inc. Methods for depositing an epitaxial silicon germanium layer having a germanium to silicon ratio greater than 1:1 using silylgermane and a diluent
US8969924B2 (en) * 2012-05-21 2015-03-03 The Board Of Trustees Of The Leland Stanford Junior University Transistor-based apparatuses, systems and methods
US9978650B2 (en) * 2013-03-13 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor channel
CN106030810B (en) * 2013-09-27 2019-07-16 英特尔公司 Improved cladding layer epitaxy via template engineering for hetero-integration on silicon
CN104517847B (en) * 2013-09-29 2017-07-14 中芯国际集成电路制造(上海)有限公司 Nodeless mesh body pipe and forming method thereof
US9570609B2 (en) 2013-11-01 2017-02-14 Samsung Electronics Co., Ltd. Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same
US9484423B2 (en) 2013-11-01 2016-11-01 Samsung Electronics Co., Ltd. Crystalline multiple-nanosheet III-V channel FETs
CN103715269B (en) * 2013-12-31 2015-06-03 京东方科技集团股份有限公司 Thin film transistor, array substrate and display device
US9647098B2 (en) 2014-07-21 2017-05-09 Samsung Electronics Co., Ltd. Thermionically-overdriven tunnel FETs and methods of fabricating the same
EP3573094B1 (en) 2014-11-18 2023-01-04 GlobalWafers Co., Ltd. High resistivity semiconductor-on-insulator wafer and a method of manufacturing
WO2016081367A1 (en) 2014-11-18 2016-05-26 Sunedison Semiconductor Limited HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING A CHARGE TRAPPING LAYER FORMED BY He-N2 CO-IMPLANTATION
CN114496732B (en) 2015-06-01 2023-03-03 环球晶圆股份有限公司 Method for fabricating silicon germanium on insulator
US9640641B2 (en) 2015-07-15 2017-05-02 International Business Machines Corporation Silicon germanium fin channel formation
EP3378094B1 (en) 2015-11-20 2021-09-15 Globalwafers Co., Ltd. Manufacturing method of smoothing a semiconductor surface
US10269617B2 (en) 2016-06-22 2019-04-23 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising an isolation region
KR102629466B1 (en) * 2016-09-21 2024-01-26 에스케이하이닉스 주식회사 Manufacturing method of semiconductor device
US20190088766A1 (en) 2017-09-21 2019-03-21 Globalfoundries Inc. Methods of forming epi semiconductor material in source/drain regions of a transistor device formed on an soi substrate
CN108767011A (en) * 2018-04-28 2018-11-06 南京邮电大学 A kind of double grids MOSFET structure
CN112262467B (en) 2018-06-08 2024-08-09 环球晶圆股份有限公司 Method for transferring thin silicon layer
US10680065B2 (en) * 2018-08-01 2020-06-09 Globalfoundries Inc. Field-effect transistors with a grown silicon-germanium channel
US10510871B1 (en) * 2018-08-16 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10811601B2 (en) 2019-01-22 2020-10-20 Northrop Grumman Systems Corporation Semiconductor devices using insulator-metal phase change materials and method for fabrication
US11004940B1 (en) 2020-07-31 2021-05-11 Genesic Semiconductor Inc. Manufacture of power devices having increased cross over current
TW202226592A (en) 2020-08-31 2022-07-01 美商GeneSiC 半導體股份有限公司 Design and manufacture of improved power devices
US11393915B2 (en) 2020-12-09 2022-07-19 Globalfoundries U.S. Inc. Epi semiconductor structures with increased epi volume in source/drain regions of a transistor device formed on an SOI substrate

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0719888B2 (en) * 1985-04-05 1995-03-06 セイコーエプソン株式会社 Field effect transistor and method of manufacturing the same
US4597160A (en) * 1985-08-09 1986-07-01 Rca Corporation Method of fabricating a polysilicon transistor with a high carrier mobility
JPS6242566A (en) * 1985-08-20 1987-02-24 Fujitsu Ltd Thin film transistor
US4697197A (en) * 1985-10-11 1987-09-29 Rca Corp. Transistor having a superlattice
US4841481A (en) * 1985-10-25 1989-06-20 Hitachi, Ltd. Semiconductor memory device
JPS62122275A (en) * 1985-11-22 1987-06-03 Mitsubishi Electric Corp Mis type semiconductor device
JPS62179160A (en) * 1986-01-31 1987-08-06 Nec Corp Manufacture of mis-type semiconductor device
JPS6453460A (en) * 1987-08-24 1989-03-01 Sony Corp Mos transistor
US5140391A (en) * 1987-08-24 1992-08-18 Sony Corporation Thin film MOS transistor having pair of gate electrodes opposing across semiconductor layer
JP2668373B2 (en) * 1988-01-07 1997-10-27 富士通株式会社 Complementary semiconductor device
JPH01248668A (en) * 1988-03-30 1989-10-04 Seiko Epson Corp Thin-film transistor
US4921813A (en) * 1988-10-17 1990-05-01 Motorola, Inc. Method for making a polysilicon transistor
US4918510A (en) * 1988-10-31 1990-04-17 Motorola, Inc. Compact CMOS device structure
JPH02159775A (en) * 1988-12-14 1990-06-19 Toshiba Corp Semiconductor photodetector and manufacture thereof
US5019882A (en) * 1989-05-15 1991-05-28 International Business Machines Corporation Germanium channel silicon MOSFET
US5272365A (en) * 1990-03-29 1993-12-21 Kabushiki Kaisha Toshiba Silicon transistor device with silicon-germanium electron gas hetero structure channel
JPH0691249B2 (en) * 1991-01-10 1994-11-14 インターナショナル・ビジネス・マシーンズ・コーポレイション Modulation-doped MISFET and manufacturing method thereof

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EP0587520A1 (en) 1994-03-16
US5461250A (en) 1995-10-24

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