FR2883661B1 - MULTI-LAYER CHANNEL FIELD EFFECT TRANSISTOR WITH MULTI-LAYER CHANNEL - Google Patents

MULTI-LAYER CHANNEL FIELD EFFECT TRANSISTOR WITH MULTI-LAYER CHANNEL

Info

Publication number
FR2883661B1
FR2883661B1 FR0603975A FR0603975A FR2883661B1 FR 2883661 B1 FR2883661 B1 FR 2883661B1 FR 0603975 A FR0603975 A FR 0603975A FR 0603975 A FR0603975 A FR 0603975A FR 2883661 B1 FR2883661 B1 FR 2883661B1
Authority
FR
France
Prior art keywords
layer channel
field effect
effect transistor
channel field
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0603975A
Other languages
French (fr)
Other versions
FR2883661A1 (en
Inventor
Frederic Allibert
Bruno Ghyselen
Takeshi Akatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0603975A priority Critical patent/FR2883661B1/en
Publication of FR2883661A1 publication Critical patent/FR2883661A1/en
Application granted granted Critical
Publication of FR2883661B1 publication Critical patent/FR2883661B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
FR0603975A 2006-05-04 2006-05-04 MULTI-LAYER CHANNEL FIELD EFFECT TRANSISTOR WITH MULTI-LAYER CHANNEL Expired - Fee Related FR2883661B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0603975A FR2883661B1 (en) 2006-05-04 2006-05-04 MULTI-LAYER CHANNEL FIELD EFFECT TRANSISTOR WITH MULTI-LAYER CHANNEL

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0603975A FR2883661B1 (en) 2006-05-04 2006-05-04 MULTI-LAYER CHANNEL FIELD EFFECT TRANSISTOR WITH MULTI-LAYER CHANNEL

Publications (2)

Publication Number Publication Date
FR2883661A1 FR2883661A1 (en) 2006-09-29
FR2883661B1 true FR2883661B1 (en) 2008-04-25

Family

ID=36956234

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0603975A Expired - Fee Related FR2883661B1 (en) 2006-05-04 2006-05-04 MULTI-LAYER CHANNEL FIELD EFFECT TRANSISTOR WITH MULTI-LAYER CHANNEL

Country Status (1)

Country Link
FR (1) FR2883661B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8817358B2 (en) * 2012-08-02 2014-08-26 Qualcomm Mems Technologies, Inc. Thin film stack with surface-conditioning buffer layers and related methods

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
US6326667B1 (en) * 1999-09-09 2001-12-04 Kabushiki Kaisha Toshiba Semiconductor devices and methods for producing semiconductor devices
FR2799305B1 (en) * 1999-10-05 2004-06-18 St Microelectronics Sa METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH ENVELOPING GRID AND DEVICE OBTAINED
JP3782021B2 (en) * 2002-02-22 2006-06-07 株式会社東芝 Semiconductor device, semiconductor device manufacturing method, and semiconductor substrate manufacturing method
FR2842350B1 (en) * 2002-07-09 2005-05-13 METHOD FOR TRANSFERRING A LAYER OF CONCEALED SEMICONDUCTOR MATERIAL

Also Published As

Publication number Publication date
FR2883661A1 (en) 2006-09-29

Similar Documents

Publication Publication Date Title
FR2881877B1 (en) MULTI-LAYER CHANNEL FIELD EFFECT TRANSISTOR WITH MULTI-LAYER CHANNEL
DE602007001429D1 (en) Packet transmission device
EP2003686A4 (en) Field effect transistor
BRPI0715730A2 (en) transmission device
EP2077590A4 (en) Field-effect transistor
EP2065925A4 (en) Field-effect transistor
GB0616984D0 (en) Transistor
GB0616985D0 (en) Transistor
BRPI0816786A2 (en) CHANNEL
FR2934919B1 (en) FIELD EFFECT TRANSISTOR SHIFT REGISTER
GB0617934D0 (en) Transistor
FI20060503A0 (en) Licensed device
FI20065755A0 (en) Channel Estimation
GB0617068D0 (en) Transistor
EP2058848A4 (en) Lateral junction field effect transistor
FI20075634A (en) Feeding device
GB0815721D0 (en) FASR-acting gate
ATE493419T1 (en) PENEM PRODRUGS
DE102006055873B8 (en) Channel wall element
DE502007006199D1 (en) ROLLER GUIDE
PT2425947T (en) Extrusion device
EP2207218A4 (en) Field effect transistor
ITTO20060498A1 (en) CABLE DEVICE
FR2883661B1 (en) MULTI-LAYER CHANNEL FIELD EFFECT TRANSISTOR WITH MULTI-LAYER CHANNEL
GB2449544B (en) A field effect transistor

Legal Events

Date Code Title Description
CD Change of name or company name

Effective date: 20120423

Owner name: SOITEC, FR

ST Notification of lapse

Effective date: 20131031