SG151102A1 - Strained channel complementary field-effect transistors and methods of manufacture - Google Patents

Strained channel complementary field-effect transistors and methods of manufacture

Info

Publication number
SG151102A1
SG151102A1 SG200608682-1A SG2006086821A SG151102A1 SG 151102 A1 SG151102 A1 SG 151102A1 SG 2006086821 A SG2006086821 A SG 2006086821A SG 151102 A1 SG151102 A1 SG 151102A1
Authority
SG
Singapore
Prior art keywords
manufacture
methods
effect transistors
complementary field
channel region
Prior art date
Application number
SG200608682-1A
Inventor
Chih-Hsin Ko
Yee-Chia Yeo
Wen-Chin Lee
Chenming Hu
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to SG200608682-1A priority Critical patent/SG151102A1/en
Publication of SG151102A1 publication Critical patent/SG151102A1/en

Links

Landscapes

  • Thin Film Transistor (AREA)

Abstract

Strained Channel Complementary Field-Effect Transistors and Methods of Manufacture A transistor includes a gate dielectric overlying a channel region. A source region and a drain region are located on opposing sides of the channel region. The channel region is formed from a first semiconductor material and the source and drain regions are formed from a second semiconductor material. A gate electrode overlies the gate dielectric. A pair of spacers is formed on sidewalls of the gate electrode. Each of the spacers includes a void adjacent the channel region. A high-stress film can overlie the gate electrode and spacers.
SG200608682-1A 2003-12-18 2003-12-18 Strained channel complementary field-effect transistors and methods of manufacture SG151102A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG200608682-1A SG151102A1 (en) 2003-12-18 2003-12-18 Strained channel complementary field-effect transistors and methods of manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200608682-1A SG151102A1 (en) 2003-12-18 2003-12-18 Strained channel complementary field-effect transistors and methods of manufacture

Publications (1)

Publication Number Publication Date
SG151102A1 true SG151102A1 (en) 2009-04-30

Family

ID=40586495

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200608682-1A SG151102A1 (en) 2003-12-18 2003-12-18 Strained channel complementary field-effect transistors and methods of manufacture

Country Status (1)

Country Link
SG (1) SG151102A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
US20020011628A1 (en) * 1997-12-03 2002-01-31 Takeshi Takagi Semiconductor device
US20030006407A1 (en) * 1996-10-16 2003-01-09 Taylor Geoff W. Apparatus and a method of fabricating inversion channel devices with precision gate doping for a monolithic integrated circuit
US6657223B1 (en) * 2002-10-29 2003-12-02 Advanced Micro Devices, Inc. Strained silicon MOSFET having silicon source/drain regions and method for its fabrication
US20070187716A1 (en) * 1999-03-12 2007-08-16 International Business Machines Corporation High speed ge channel heterostructures for field effect devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
US20030006407A1 (en) * 1996-10-16 2003-01-09 Taylor Geoff W. Apparatus and a method of fabricating inversion channel devices with precision gate doping for a monolithic integrated circuit
US20020011628A1 (en) * 1997-12-03 2002-01-31 Takeshi Takagi Semiconductor device
US20070187716A1 (en) * 1999-03-12 2007-08-16 International Business Machines Corporation High speed ge channel heterostructures for field effect devices
US6657223B1 (en) * 2002-10-29 2003-12-02 Advanced Micro Devices, Inc. Strained silicon MOSFET having silicon source/drain regions and method for its fabrication

Similar Documents

Publication Publication Date Title
TW200507255A (en) Semiconductor device and method of fabricating the same
TW200625634A (en) Transistor with strained region and method of manufacture
TW200511583A (en) Strained-channel fin field effect transistor (FET) with a uniform channel thickness and separate gates
SG99379A1 (en) Method for forming a transistor gate dielectric with high-k and low-k regions
SG145563A1 (en) Method to form a self-aligned cmos inverter using vertical device integration
WO2003036729A8 (en) Delta doped silicon carbide metal-semiconductor field effect transistors and methods of fabricating them
WO2005057615A3 (en) Closed cell trench metal-oxide-semiconductor field effect transistor
WO2009055173A3 (en) Floating body field-effect transistors, and methods of forming floating body field-effect transistors
TW200631065A (en) Strained transistor with hybrid-strain inducing layer
TW200633212A (en) Semiconductor device including field-effect transistor
SG142307A1 (en) Strained channel field effect transistor using sacrificial spacer
DE69728259D1 (en) SILICON CARBIDE CMOS AND PRODUCTION METHOD
WO2004019380A3 (en) Method and apparatus for improved mos gating to reduce miller capacitance and switching losses
ATE461526T1 (en) HIGH DENSITY FINFET INTEGRATION PROCESS
WO2007082266A3 (en) Semiconductor transistors with expanded top portions of gates
WO2005053032A3 (en) Trench insulated gate field effect transistor
MY135374A (en) Semiconductor storage
WO2005089440A3 (en) Multiple dielectric finfet structure and method
TW200633137A (en) Semiconductor constructions and transistors, and methods of forming semiconductor constructions and transistors
WO2005098959A3 (en) Dual-gate transistors
TWI268557B (en) Semiconductor device, accumulation mode multiple-gate transistor and methods of fabricating the same
WO2004012270A3 (en) Field effect transistor and method of manufacturing same
TW200505020A (en) Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same
WO2002078090A3 (en) Field-effect transistor structure and method of manufacture
TW200703666A (en) Thin film transistor