SG151102A1 - Strained channel complementary field-effect transistors and methods of manufacture - Google Patents
Strained channel complementary field-effect transistors and methods of manufactureInfo
- Publication number
- SG151102A1 SG151102A1 SG200608682-1A SG2006086821A SG151102A1 SG 151102 A1 SG151102 A1 SG 151102A1 SG 2006086821 A SG2006086821 A SG 2006086821A SG 151102 A1 SG151102 A1 SG 151102A1
- Authority
- SG
- Singapore
- Prior art keywords
- manufacture
- methods
- effect transistors
- complementary field
- channel region
- Prior art date
Links
Landscapes
- Thin Film Transistor (AREA)
Abstract
Strained Channel Complementary Field-Effect Transistors and Methods of Manufacture A transistor includes a gate dielectric overlying a channel region. A source region and a drain region are located on opposing sides of the channel region. The channel region is formed from a first semiconductor material and the source and drain regions are formed from a second semiconductor material. A gate electrode overlies the gate dielectric. A pair of spacers is formed on sidewalls of the gate electrode. Each of the spacers includes a void adjacent the channel region. A high-stress film can overlie the gate electrode and spacers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200608682-1A SG151102A1 (en) | 2003-12-18 | 2003-12-18 | Strained channel complementary field-effect transistors and methods of manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200608682-1A SG151102A1 (en) | 2003-12-18 | 2003-12-18 | Strained channel complementary field-effect transistors and methods of manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
SG151102A1 true SG151102A1 (en) | 2009-04-30 |
Family
ID=40586495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200608682-1A SG151102A1 (en) | 2003-12-18 | 2003-12-18 | Strained channel complementary field-effect transistors and methods of manufacture |
Country Status (1)
Country | Link |
---|---|
SG (1) | SG151102A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5461250A (en) * | 1992-08-10 | 1995-10-24 | International Business Machines Corporation | SiGe thin film or SOI MOSFET and method for making the same |
US20020011628A1 (en) * | 1997-12-03 | 2002-01-31 | Takeshi Takagi | Semiconductor device |
US20030006407A1 (en) * | 1996-10-16 | 2003-01-09 | Taylor Geoff W. | Apparatus and a method of fabricating inversion channel devices with precision gate doping for a monolithic integrated circuit |
US6657223B1 (en) * | 2002-10-29 | 2003-12-02 | Advanced Micro Devices, Inc. | Strained silicon MOSFET having silicon source/drain regions and method for its fabrication |
US20070187716A1 (en) * | 1999-03-12 | 2007-08-16 | International Business Machines Corporation | High speed ge channel heterostructures for field effect devices |
-
2003
- 2003-12-18 SG SG200608682-1A patent/SG151102A1/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5461250A (en) * | 1992-08-10 | 1995-10-24 | International Business Machines Corporation | SiGe thin film or SOI MOSFET and method for making the same |
US20030006407A1 (en) * | 1996-10-16 | 2003-01-09 | Taylor Geoff W. | Apparatus and a method of fabricating inversion channel devices with precision gate doping for a monolithic integrated circuit |
US20020011628A1 (en) * | 1997-12-03 | 2002-01-31 | Takeshi Takagi | Semiconductor device |
US20070187716A1 (en) * | 1999-03-12 | 2007-08-16 | International Business Machines Corporation | High speed ge channel heterostructures for field effect devices |
US6657223B1 (en) * | 2002-10-29 | 2003-12-02 | Advanced Micro Devices, Inc. | Strained silicon MOSFET having silicon source/drain regions and method for its fabrication |
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