JPS62122275A - Mis type semiconductor device - Google Patents

Mis type semiconductor device

Info

Publication number
JPS62122275A
JPS62122275A JP26274985A JP26274985A JPS62122275A JP S62122275 A JPS62122275 A JP S62122275A JP 26274985 A JP26274985 A JP 26274985A JP 26274985 A JP26274985 A JP 26274985A JP S62122275 A JPS62122275 A JP S62122275A
Authority
JP
Japan
Prior art keywords
formed
interface
semiconductors
effect
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26274985A
Inventor
Sotohisa Asai
Shuhei Iwade
Hidekazu Yamamoto
Naoki Yuya
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP26274985A priority Critical patent/JPS62122275A/en
Publication of JPS62122275A publication Critical patent/JPS62122275A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H01L29/78687Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1029Channel region of field-effect devices of field-effect transistors
    • H01L29/1033Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1054Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1604Amorphous materials

Abstract

PURPOSE:To eliminate the effect of an interface level and to obtain a highly reliable semiconductor device, by changing the composition of amorphous semiconductors, and providing the minimum value of a forbidden band at a part inner than the interface between an insulating film and the semiconductor. CONSTITUTION:On an insulating substrate 5, a gate electrode 6 is formed. A gate insulating film 1, amorphous semiconductors, e.g., amorphous silicon carbide layers 2 and 4, and an amorphous silicon layer 3 are formed in the same film growing tank. Thereafter, source and drain electrodes 7 and 8 are formed. By forming the amorphous semiconductors having the different forbidden bands at the interface between the insulating film and the semiconductors, a potential well is formed. Since carrier charge is present in this well, the effect of the interface level is not received. In the MIS type FET having such a structure, a current path is formed as shown by an arrow, and the effect of the interface level is not exerted, too.
JP26274985A 1985-11-22 1985-11-22 Mis type semiconductor device Pending JPS62122275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26274985A JPS62122275A (en) 1985-11-22 1985-11-22 Mis type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26274985A JPS62122275A (en) 1985-11-22 1985-11-22 Mis type semiconductor device

Publications (1)

Publication Number Publication Date
JPS62122275A true JPS62122275A (en) 1987-06-03

Family

ID=17380049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26274985A Pending JPS62122275A (en) 1985-11-22 1985-11-22 Mis type semiconductor device

Country Status (1)

Country Link
JP (1) JPS62122275A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0383743A2 (en) * 1989-02-17 1990-08-22 International Business Machines Corporation Thin film transistor
US5221631A (en) * 1989-02-17 1993-06-22 International Business Machines Corporation Method of fabricating a thin film transistor having a silicon carbide buffer layer
US5272361A (en) * 1989-06-30 1993-12-21 Semiconductor Energy Laboratory Co., Ltd. Field effect semiconductor device with immunity to hot carrier effects
EP0587520A1 (en) * 1992-08-10 1994-03-16 International Business Machines Corporation A SiGe thin film or SOI MOSFET and method for making the same
US6731531B1 (en) 1997-07-29 2004-05-04 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6835638B1 (en) 1997-07-29 2004-12-28 Micron Technology, Inc. Silicon carbide gate transistor and fabrication process
US7005344B2 (en) 1997-07-29 2006-02-28 Micron Technology, Inc. Method of forming a device with a gallium nitride or gallium aluminum nitride gate

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0383743A2 (en) * 1989-02-17 1990-08-22 International Business Machines Corporation Thin film transistor
US5221631A (en) * 1989-02-17 1993-06-22 International Business Machines Corporation Method of fabricating a thin film transistor having a silicon carbide buffer layer
US5272361A (en) * 1989-06-30 1993-12-21 Semiconductor Energy Laboratory Co., Ltd. Field effect semiconductor device with immunity to hot carrier effects
EP0587520A1 (en) * 1992-08-10 1994-03-16 International Business Machines Corporation A SiGe thin film or SOI MOSFET and method for making the same
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
US6731531B1 (en) 1997-07-29 2004-05-04 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6835638B1 (en) 1997-07-29 2004-12-28 Micron Technology, Inc. Silicon carbide gate transistor and fabrication process
US7005344B2 (en) 1997-07-29 2006-02-28 Micron Technology, Inc. Method of forming a device with a gallium nitride or gallium aluminum nitride gate

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