DE69307768T2 - Röntgenstrahlmaske für die Mustererzeugen - Google Patents

Röntgenstrahlmaske für die Mustererzeugen

Info

Publication number
DE69307768T2
DE69307768T2 DE69307768T DE69307768T DE69307768T2 DE 69307768 T2 DE69307768 T2 DE 69307768T2 DE 69307768 T DE69307768 T DE 69307768T DE 69307768 T DE69307768 T DE 69307768T DE 69307768 T2 DE69307768 T2 DE 69307768T2
Authority
DE
Germany
Prior art keywords
mask
absorber layer
layer
repair
manufacture according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69307768T
Other languages
German (de)
English (en)
Other versions
DE69307768D1 (de
Inventor
Donald M Tennant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69307768D1 publication Critical patent/DE69307768D1/de
Publication of DE69307768T2 publication Critical patent/DE69307768T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • H10P76/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE69307768T 1992-04-03 1993-03-25 Röntgenstrahlmaske für die Mustererzeugen Expired - Fee Related DE69307768T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/862,684 US5304437A (en) 1992-04-03 1992-04-03 Mask for x-ray pattern delineation

Publications (2)

Publication Number Publication Date
DE69307768D1 DE69307768D1 (de) 1997-03-13
DE69307768T2 true DE69307768T2 (de) 1997-05-28

Family

ID=25339054

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69307768T Expired - Fee Related DE69307768T2 (de) 1992-04-03 1993-03-25 Röntgenstrahlmaske für die Mustererzeugen

Country Status (8)

Country Link
US (1) US5304437A (cg-RX-API-DMAC10.html)
EP (1) EP0569123B1 (cg-RX-API-DMAC10.html)
JP (1) JPH0629196A (cg-RX-API-DMAC10.html)
KR (1) KR930022468A (cg-RX-API-DMAC10.html)
CA (1) CA2090157C (cg-RX-API-DMAC10.html)
DE (1) DE69307768T2 (cg-RX-API-DMAC10.html)
HK (1) HK118697A (cg-RX-API-DMAC10.html)
TW (1) TW234210B (cg-RX-API-DMAC10.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6015640A (en) * 1998-03-26 2000-01-18 Euv Llc Mask fabrication process
US6277539B1 (en) * 1998-05-22 2001-08-21 The United States Of America As Represented By The United States Department Of Energy Enhanced adhesion for LIGA microfabrication by using a buffer layer
AU5932500A (en) 1999-07-22 2001-02-13 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method and mask devices
US6776006B2 (en) 2000-10-13 2004-08-17 Corning Incorporated Method to avoid striae in EUV lithography mirrors
US6818357B2 (en) 2001-10-03 2004-11-16 Intel Corporation Photolithographic mask fabrication
DE10155112B4 (de) * 2001-11-09 2006-02-02 Infineon Technologies Ag Reflexionsmaske für die EUV-Lithographie und Herstellungsverfahren dafür
JP3816809B2 (ja) 2002-01-30 2006-08-30 株式会社日立製作所 薬剤、薬剤キャリア、薬剤の製造方法及び腫瘍の治療方法
JP3939167B2 (ja) * 2002-02-28 2007-07-04 Ｈｏｙａ株式会社 露光用反射型マスクブランク、その製造方法及び露光用反射型マスク
DE10223113B4 (de) * 2002-05-21 2007-09-13 Infineon Technologies Ag Verfahren zur Herstellung einer photolithographischen Maske
JP3842188B2 (ja) 2002-08-28 2006-11-08 株式会社日立製作所 超音波治療装置
US7959817B2 (en) 2004-01-09 2011-06-14 Masonite Corporation Door skin, a method of etching a plate, and an etched plate formed therefrom
US6988342B2 (en) 2003-01-17 2006-01-24 Masonite Corporation Door skin, a method of etching a plate for forming a wood grain pattern in the door skin, and an etched plate formed therefrom
JP4694150B2 (ja) * 2003-06-20 2011-06-08 東京エレクトロン株式会社 処理方法及び処理システム
FR2894691B1 (fr) * 2005-12-13 2008-01-18 Commissariat Energie Atomique Procede de fabrication de masque lithographique en reflexion et masque issu du procede
KR102520797B1 (ko) * 2015-10-15 2023-04-12 삼성전자주식회사 반사형 포토마스크 및 그 제조 방법
US20230280644A1 (en) * 2022-03-03 2023-09-07 International Business Machines Corporation Method of making euv mask with an absorber layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673018A (en) * 1969-05-08 1972-06-27 Rca Corp Method of fabrication of photomasks
DE3856054T2 (de) * 1987-02-18 1998-03-19 Canon K.K., Tokio/Tokyo Reflexionsmaske
JPH0675190B2 (ja) * 1987-10-09 1994-09-21 ヒューズ・エアクラフト・カンパニー アモルファス／単結晶構造を有するモノリシックチャンネルマスク
US4906326A (en) * 1988-03-25 1990-03-06 Canon Kabushiki Kaisha Mask repair system

Also Published As

Publication number Publication date
CA2090157A1 (en) 1993-10-04
EP0569123A3 (en) 1994-08-24
JPH0629196A (ja) 1994-02-04
US5304437A (en) 1994-04-19
KR930022468A (ko) 1993-11-24
HK118697A (en) 1997-09-05
CA2090157C (en) 1996-07-30
EP0569123A2 (en) 1993-11-10
EP0569123B1 (en) 1997-01-29
DE69307768D1 (de) 1997-03-13
TW234210B (cg-RX-API-DMAC10.html) 1994-11-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee
8327 Change in the person/name/address of the patent owner

Owner name: LUCENT TECHNOLOGIES INC., MURRAY HILL, N.Y., US

8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER GBR, 65193 WIESBADEN

8370 Indication related to discontinuation of the patent is to be deleted
8339 Ceased/non-payment of the annual fee