DE69304352D1 - Stromversorgungsgerät für eine Halbleiterlichtquelle mit optimierter Einstellung für den Betrieb einer Laserdiode - Google Patents

Stromversorgungsgerät für eine Halbleiterlichtquelle mit optimierter Einstellung für den Betrieb einer Laserdiode

Info

Publication number
DE69304352D1
DE69304352D1 DE69304352T DE69304352T DE69304352D1 DE 69304352 D1 DE69304352 D1 DE 69304352D1 DE 69304352 T DE69304352 T DE 69304352T DE 69304352 T DE69304352 T DE 69304352T DE 69304352 D1 DE69304352 D1 DE 69304352D1
Authority
DE
Germany
Prior art keywords
light source
power supply
supply device
laser diode
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69304352T
Other languages
English (en)
Other versions
DE69304352T2 (de
Inventor
Tetsufumi Odagawa
Kiyohide Wakao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69304352D1 publication Critical patent/DE69304352D1/de
Application granted granted Critical
Publication of DE69304352T2 publication Critical patent/DE69304352T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06812—Stabilisation of laser output parameters by monitoring or fixing the threshold current or other specific points of the L-I or V-I characteristics

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69304352T 1992-01-10 1993-01-08 Stromversorgungsgerät für eine Halbleiterlichtquelle mit optimierter Einstellung für den Betrieb einer Laserdiode Expired - Lifetime DE69304352T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4002793A JPH05190947A (ja) 1992-01-10 1992-01-10 半導体レーザの駆動方法

Publications (2)

Publication Number Publication Date
DE69304352D1 true DE69304352D1 (de) 1996-10-10
DE69304352T2 DE69304352T2 (de) 1997-01-23

Family

ID=11539250

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69304352T Expired - Lifetime DE69304352T2 (de) 1992-01-10 1993-01-08 Stromversorgungsgerät für eine Halbleiterlichtquelle mit optimierter Einstellung für den Betrieb einer Laserdiode

Country Status (4)

Country Link
US (1) US5987044A (de)
EP (1) EP0551121B1 (de)
JP (1) JPH05190947A (de)
DE (1) DE69304352T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999014832A1 (fr) 1997-09-16 1999-03-25 Hitachi, Ltd. Dispositif de transmission optique et procede de pilotage d'une diode laser
US6122302A (en) * 1997-12-10 2000-09-19 Harmonic Inc. Automatic compensation of CNR and OMI in a laser transmitter
US20070175150A1 (en) * 2000-04-12 2007-08-02 Price Raymond R Wall system
WO2002037622A2 (en) 2000-11-06 2002-05-10 Vitesse Semiconductor Corporation Method of controlling the turn off characteristics of a vcsel diode
AU2002254522A1 (en) * 2001-03-30 2003-11-11 Santur Corporation High speed modulation of arrayed lasers
WO2002084742A1 (en) * 2001-03-30 2002-10-24 Santur Corporation Switched laser array modulation with integral electroabsorption modulator
US20050105571A1 (en) * 2002-02-25 2005-05-19 Van Der Kall Herman P. Controlling the temperature of a laser diode in a disc drive
US7869477B2 (en) * 2002-12-18 2011-01-11 Lighttime, Llc System and method for developing high output power nanosecond range pulses from continuous wave semiconductor laser systems
US20040131094A1 (en) * 2002-12-18 2004-07-08 Reza Miremadi Method of controlling the extinction ratio of a laser
US20040190580A1 (en) * 2003-03-04 2004-09-30 Bardia Pezeshki High-yield high-precision distributed feedback laser based on an array
US7573928B1 (en) 2003-09-05 2009-08-11 Santur Corporation Semiconductor distributed feedback (DFB) laser array with integrated attenuator
JP2006324575A (ja) * 2005-05-20 2006-11-30 Sumitomo Electric Ind Ltd 半導体レーザ素子の駆動方法
US20070262294A1 (en) * 2006-05-15 2007-11-15 X-Rite, Incorporated Light source including quantum dot material and apparatus including same
US8000368B2 (en) * 2006-07-26 2011-08-16 Santur Corporation Modulated semiconductor DFB laser array with a MEMS-based RF switch
JP4341708B2 (ja) 2007-08-13 2009-10-07 オムロン株式会社 半導体レーザ駆動装置、半導体レーザ駆動方法、光送信装置、光配線モジュール、および電子機器
JP6378901B2 (ja) * 2014-03-06 2018-08-22 オリンパス株式会社 光源装置、内視鏡装置及び光源制御方法
EP3273551A4 (de) * 2015-03-19 2018-11-14 Sony Corporation Lichtemittierendes halbleiterelement und lichtemittierende halbleiterelementanordnung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599988A (ja) * 1982-07-09 1984-01-19 Hitachi Ltd Ｐｗｍ光変調器
JPS5984591A (ja) * 1982-11-08 1984-05-16 Fujitsu Ltd レ−ザダイオ−ドの駆動回路
JPS59171037A (ja) * 1983-03-18 1984-09-27 Hitachi Ltd 半導体レーザの駆動方法及び駆動装置
JPS6018982A (ja) * 1983-07-13 1985-01-31 Fujitsu Ltd 半導体レ−ザ駆動方式
IL86349A (en) * 1987-05-26 1993-04-04 Hughes Aircraft Co Temperature stabilization of laser diodes and light emitting diodes

Also Published As

Publication number Publication date
DE69304352T2 (de) 1997-01-23
EP0551121B1 (de) 1996-09-04
EP0551121A1 (de) 1993-07-14
JPH05190947A (ja) 1993-07-30
US5987044A (en) 1999-11-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE