DE69304095T2 - Laserdiode mit verteilter Rückkopplung mit selektiv angeordneten Verlustabschnitten - Google Patents

Laserdiode mit verteilter Rückkopplung mit selektiv angeordneten Verlustabschnitten

Info

Publication number
DE69304095T2
DE69304095T2 DE69304095T DE69304095T DE69304095T2 DE 69304095 T2 DE69304095 T2 DE 69304095T2 DE 69304095 T DE69304095 T DE 69304095T DE 69304095 T DE69304095 T DE 69304095T DE 69304095 T2 DE69304095 T2 DE 69304095T2
Authority
DE
Germany
Prior art keywords
laser diode
distributed feedback
feedback laser
selectively arranged
loss sections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69304095T
Other languages
English (en)
Other versions
DE69304095D1 (de
Inventor
Keith Brian Kahen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE69304095D1 publication Critical patent/DE69304095D1/de
Publication of DE69304095T2 publication Critical patent/DE69304095T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H01S5/0602—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region which is an umpumped part of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
DE69304095T 1992-02-18 1993-01-27 Laserdiode mit verteilter Rückkopplung mit selektiv angeordneten Verlustabschnitten Expired - Lifetime DE69304095T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/836,568 US5206877A (en) 1992-02-18 1992-02-18 Distributed feedback laser diodes with selectively placed lossy sections

Publications (2)

Publication Number Publication Date
DE69304095D1 DE69304095D1 (de) 1996-09-26
DE69304095T2 true DE69304095T2 (de) 1997-03-13

Family

ID=25272249

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69304095T Expired - Lifetime DE69304095T2 (de) 1992-02-18 1993-01-27 Laserdiode mit verteilter Rückkopplung mit selektiv angeordneten Verlustabschnitten

Country Status (4)

Country Link
US (1) US5206877A (de)
EP (1) EP0556607B1 (de)
JP (1) JPH05283806A (de)
DE (1) DE69304095T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2770714B2 (ja) * 1993-09-10 1998-07-02 日本電気株式会社 分布帰還型半導体レーザおよびその電流注入方法
JP2590710B2 (ja) * 1993-11-26 1997-03-12 日本電気株式会社 半導体装置およびその製造方法
KR100265859B1 (ko) * 1996-12-21 2000-09-15 정선종 전계방출 디스플레이용 발광입자
GB2410124B (en) * 2004-01-14 2006-08-02 Agilent Technologies Inc Semiconductor laser with grating structure for stabilizing the wavelength of optical radiation
WO2007059147A2 (en) * 2005-11-14 2007-05-24 Applied Materials, Inc. Semiconductor laser
DE102008054217A1 (de) * 2008-10-31 2010-05-06 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
US9093821B2 (en) * 2013-12-11 2015-07-28 Wisconsin Alumni Research Foundation Substrate-emitting transverse magnetic polarized laser employing a metal/semiconductor distributed feedback grating for symmetric-mode operation

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3686785T2 (de) * 1985-06-10 1993-04-29 Nec Corp Halbleiterlaservorrichtung mit verteilter rueckkopplung.
JPS6317588A (ja) * 1986-07-10 1988-01-25 Nec Corp 半導体レ−ザ装置
JPS6376391A (ja) * 1986-09-18 1988-04-06 Fujitsu Ltd 半導体発光装置の製造方法
JPS63265485A (ja) * 1987-04-23 1988-11-01 Sony Corp 半導体レ−ザ
US4835779A (en) * 1987-05-04 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Method and apparatus for the operation of a distributed feedback laser
JP2673518B2 (ja) * 1987-07-21 1997-11-05 東亞合成株式会社 塩水中の塩素酸塩の除去方法
JP2533355B2 (ja) * 1988-03-11 1996-09-11 国際電信電話株式会社 分布帰還形半導体レ―ザ装置およびその電流注入方法
US4903275A (en) * 1989-03-20 1990-02-20 General Electric Company Phase modulation semiconductor laser array
US5084894A (en) * 1989-06-20 1992-01-28 Optical Measurement Technology Development Co., Ltd. Optical semiconductor device

Also Published As

Publication number Publication date
JPH05283806A (ja) 1993-10-29
US5206877A (en) 1993-04-27
EP0556607A3 (en) 1993-09-15
EP0556607A2 (de) 1993-08-25
DE69304095D1 (de) 1996-09-26
EP0556607B1 (de) 1996-08-21

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