DE69303121T2 - Lichtemittierende GaP-Vorrichtung und Verfahren zu ihrer Herstellung - Google Patents

Lichtemittierende GaP-Vorrichtung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69303121T2
DE69303121T2 DE1993603121 DE69303121T DE69303121T2 DE 69303121 T2 DE69303121 T2 DE 69303121T2 DE 1993603121 DE1993603121 DE 1993603121 DE 69303121 T DE69303121 T DE 69303121T DE 69303121 T2 DE69303121 T2 DE 69303121T2
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
same
emitting device
gap light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1993603121
Other languages
English (en)
Other versions
DE69303121D1 (de
Inventor
Munehisa C O Isobe Yanagisawa
Susumu C O Isobe Kojos Higuchi
Yuki C O Isobe Kojo Tamura
Akio C O Isobe Kojo Nakamura
Toshio C O Isobe Kojo Otaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69303121D1 publication Critical patent/DE69303121D1/de
Publication of DE69303121T2 publication Critical patent/DE69303121T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE1993603121 1992-07-31 1993-03-30 Lichtemittierende GaP-Vorrichtung und Verfahren zu ihrer Herstellung Expired - Fee Related DE69303121T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22532492A JP2701113B2 (ja) 1992-07-31 1992-07-31 ＧａＰ系発光素子基板及びその製造方法

Publications (2)

Publication Number Publication Date
DE69303121D1 DE69303121D1 (de) 1996-07-18
DE69303121T2 true DE69303121T2 (de) 1996-10-24

Family

ID=16827573

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1993603121 Expired - Fee Related DE69303121T2 (de) 1992-07-31 1993-03-30 Lichtemittierende GaP-Vorrichtung und Verfahren zu ihrer Herstellung

Country Status (3)

Country Link
EP (1) EP0580953B1 (de)
JP (1) JP2701113B2 (de)
DE (1) DE69303121T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4946247B2 (ja) * 2006-08-04 2012-06-06 信越半導体株式会社 エピタキシャル基板および液相エピタキシャル成長方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4180423A (en) * 1974-01-31 1979-12-25 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing red light-emitting gallium phosphide device
JPS54128990A (en) * 1978-03-31 1979-10-05 Toshiba Corp Growing method for single crystal of gallium phosphide
JPS6230700A (ja) * 1985-08-01 1987-02-09 Shin Etsu Handotai Co Ltd 化合物半導体単結晶およびその製造方法
JPS63315599A (ja) * 1987-06-15 1988-12-23 Mitsubishi Monsanto Chem Co 無機化合物単結晶の成長方法
JPH01290597A (ja) * 1988-05-19 1989-11-22 Sumitomo Electric Ind Ltd 半絶縁性ＧａＡｓ単結晶の製造方法

Also Published As

Publication number Publication date
EP0580953A1 (de) 1994-02-02
EP0580953B1 (de) 1996-06-12
JP2701113B2 (ja) 1998-01-21
JPH0653548A (ja) 1994-02-25
DE69303121D1 (de) 1996-07-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee