DE69232510T2 - Nicht-flüchtige Halbleiter-Speicher-Vorrichtung - Google Patents

Nicht-flüchtige Halbleiter-Speicher-Vorrichtung

Info

Publication number
DE69232510T2
DE69232510T2 DE1992632510 DE69232510T DE69232510T2 DE 69232510 T2 DE69232510 T2 DE 69232510T2 DE 1992632510 DE1992632510 DE 1992632510 DE 69232510 T DE69232510 T DE 69232510T DE 69232510 T2 DE69232510 T2 DE 69232510T2
Authority
DE
Germany
Prior art keywords
threshold voltage
erasure
memory cells
cell
highest
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1992632510
Other languages
English (en)
Other versions
DE69232510D1 (de
Inventor
Yasushi Kasa
Takao Akaogi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3346663A external-priority patent/JP2732471B2/ja
Priority claimed from JP27435592A external-priority patent/JPH06124595A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69232510D1 publication Critical patent/DE69232510D1/de
Publication of DE69232510T2 publication Critical patent/DE69232510T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/81—Threshold

Landscapes

  • Read Only Memory (AREA)
DE1992632510 1991-12-27 1992-12-29 Nicht-flüchtige Halbleiter-Speicher-Vorrichtung Expired - Fee Related DE69232510T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3346663A JP2732471B2 (ja) 1991-12-27 1991-12-27 不揮発性半導体記憶装置
JP27435592A JPH06124595A (ja) 1992-10-13 1992-10-13 フラッシュ・メモリ

Publications (2)

Publication Number Publication Date
DE69232510D1 DE69232510D1 (de) 2002-04-25
DE69232510T2 true DE69232510T2 (de) 2002-07-18

Family

ID=26551005

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1992632510 Expired - Fee Related DE69232510T2 (de) 1991-12-27 1992-12-29 Nicht-flüchtige Halbleiter-Speicher-Vorrichtung

Country Status (2)

Country Link
EP (1) EP0903753B1 (de)
DE (1) DE69232510T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1128391A1 (de) 2000-02-22 2001-08-29 STMicroelectronics S.r.l. Verfahren und Schalterkreisarchitekur zur Prüfung einer integrierten Schaltung mit einem programmierbaren, nicht-flüchtigen Speicher

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4460982A (en) * 1982-05-20 1984-07-17 Intel Corporation Intelligent electrically programmable and electrically erasable ROM
JPH0713879B2 (ja) * 1985-06-21 1995-02-15 三菱電機株式会社 半導体記憶装置
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
JP2586722B2 (ja) * 1990-10-11 1997-03-05 日本電気株式会社 半導体記憶装置
US5142496A (en) * 1991-06-03 1992-08-25 Advanced Micro Devices, Inc. Method for measuring VT 's less than zero without applying negative voltages

Also Published As

Publication number Publication date
EP0903753B1 (de) 2002-03-20
EP0903753A2 (de) 1999-03-24
EP0903753A3 (de) 1999-04-28
DE69232510D1 (de) 2002-04-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee