DE69232038T2 - Verfahren zur Herstellung einer Halbleiteranordnung mit Isolationszonen in einem Halbleitersubstrat - Google Patents

Verfahren zur Herstellung einer Halbleiteranordnung mit Isolationszonen in einem Halbleitersubstrat

Info

Publication number
DE69232038T2
DE69232038T2 DE1992632038 DE69232038T DE69232038T2 DE 69232038 T2 DE69232038 T2 DE 69232038T2 DE 1992632038 DE1992632038 DE 1992632038 DE 69232038 T DE69232038 T DE 69232038T DE 69232038 T2 DE69232038 T2 DE 69232038T2
Authority
DE
Germany
Prior art keywords
producing
semiconductor
isolation zones
semiconductor substrate
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1992632038
Other languages
English (en)
Other versions
DE69232038D1 (de
Inventor
Steven S Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MagnaChip Semiconductor Ltd
NCR International Inc
Original Assignee
Symbios Inc
NCR International Inc
Hyundai Electronics America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Symbios Inc, NCR International Inc, Hyundai Electronics America Inc filed Critical Symbios Inc
Publication of DE69232038D1 publication Critical patent/DE69232038D1/de
Application granted granted Critical
Publication of DE69232038T2 publication Critical patent/DE69232038T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
DE1992632038 1991-03-04 1992-02-28 Verfahren zur Herstellung einer Halbleiteranordnung mit Isolationszonen in einem Halbleitersubstrat Expired - Lifetime DE69232038T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66334991A 1991-03-04 1991-03-04

Publications (2)

Publication Number Publication Date
DE69232038D1 DE69232038D1 (de) 2001-10-11
DE69232038T2 true DE69232038T2 (de) 2002-01-31

Family

ID=24661438

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1992632038 Expired - Lifetime DE69232038T2 (de) 1991-03-04 1992-02-28 Verfahren zur Herstellung einer Halbleiteranordnung mit Isolationszonen in einem Halbleitersubstrat

Country Status (3)

Country Link
EP (1) EP0502663B1 (de)
JP (1) JPH05102133A (de)
DE (1) DE69232038T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5470783A (en) * 1994-06-06 1995-11-28 At&T Ipm Corp. Method for integrated circuit device isolation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052948A1 (de) * 1980-11-24 1982-06-02 Motorola, Inc. Herstellung von Oxid-Isolationen
US4580330A (en) * 1984-06-15 1986-04-08 Texas Instruments Incorporated Integrated circuit isolation
US4923563A (en) * 1987-06-15 1990-05-08 Ncr Corporation Semiconductor field oxide formation process using a sealing sidewall of consumable nitride

Also Published As

Publication number Publication date
EP0502663B1 (de) 2001-09-05
EP0502663A2 (de) 1992-09-09
EP0502663A3 (en) 1993-09-08
DE69232038D1 (de) 2001-10-11
JPH05102133A (ja) 1993-04-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: FIENER, J., PAT.-ANW., 87719 MINDELHEIM

8327 Change in the person/name/address of the patent owner

Owner name: HYNIX SEMICONDUCTOR INC., ICHON, KYONGGI, KR

Owner name: NCR INTERNATIONAL, INC., DAYTON, OHIO, US

8327 Change in the person/name/address of the patent owner

Owner name: MAGNACHIP SEMICONDUCTOR, LTD., CHEONGJU, KR

Owner name: NCR INTERNATIONAL, INC., DAYTON, OHIO, US