DE69224903D1 - Feldeffekttransistor vom Metall-Oxyd-Halbleitertyp (MOSFET) - Google Patents
Feldeffekttransistor vom Metall-Oxyd-Halbleitertyp (MOSFET)Info
- Publication number
- DE69224903D1 DE69224903D1 DE69224903T DE69224903T DE69224903D1 DE 69224903 D1 DE69224903 D1 DE 69224903D1 DE 69224903 T DE69224903 T DE 69224903T DE 69224903 T DE69224903 T DE 69224903T DE 69224903 D1 DE69224903 D1 DE 69224903D1
- Authority
- DE
- Germany
- Prior art keywords
- mosfet
- metal oxide
- oxide semiconductor
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Electronic Switches (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04257253A JP3111424B2 (ja) | 1992-09-01 | 1992-09-01 | 信号統合処理回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69224903D1 true DE69224903D1 (de) | 1998-04-30 |
| DE69224903T2 DE69224903T2 (de) | 1998-07-16 |
Family
ID=17303821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69224903T Expired - Fee Related DE69224903T2 (de) | 1992-09-01 | 1992-12-11 | Feldeffekttransistor vom Metall-Oxyd-Halbleitertyp (MOSFET) |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5440156A (de) |
| EP (1) | EP0585491B1 (de) |
| JP (1) | JP3111424B2 (de) |
| KR (1) | KR100317236B1 (de) |
| DE (1) | DE69224903T2 (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6013958A (en) * | 1998-07-23 | 2000-01-11 | Lucent Technologies Inc. | Integrated circuit with variable capacitor |
| JP4565693B2 (ja) * | 2000-03-13 | 2010-10-20 | 株式会社日立国際電気 | Ｍｏｓ−ｆｅｔ増幅回路 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4507649A (en) * | 1982-05-24 | 1985-03-26 | Rca Corporation | Flash A/D converter having reduced input loading |
| JPS61102057U (de) * | 1984-12-10 | 1986-06-28 | ||
| JPS61193514A (ja) * | 1985-02-22 | 1986-08-28 | Nec Corp | タイマ回路 |
| US4967109A (en) * | 1989-12-08 | 1990-10-30 | General Electric Company | High efficiency gate driver circuit for a high frequency converter |
| IT1251011B (it) * | 1991-02-18 | 1995-04-28 | Sgs Thomson Microelectronics | Dispositivo di controllo di corrente particolarmente per circuiti di potenza in tecnologia mos |
-
1992
- 1992-09-01 JP JP04257253A patent/JP3111424B2/ja not_active Expired - Fee Related
- 1992-12-08 US US07/986,764 patent/US5440156A/en not_active Expired - Fee Related
- 1992-12-11 DE DE69224903T patent/DE69224903T2/de not_active Expired - Fee Related
- 1992-12-11 EP EP92121192A patent/EP0585491B1/de not_active Expired - Lifetime
-
1993
- 1993-08-31 KR KR1019930017124A patent/KR100317236B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100317236B1 (ko) | 2002-07-18 |
| EP0585491B1 (de) | 1998-03-25 |
| JP3111424B2 (ja) | 2000-11-20 |
| JPH0685181A (ja) | 1994-03-25 |
| US5440156A (en) | 1995-08-08 |
| EP0585491A1 (de) | 1994-03-09 |
| DE69224903T2 (de) | 1998-07-16 |
| KR940008135A (ko) | 1994-04-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: YOZAN, INC., TOKIO/TOKYO, JP SHARP K.K., OSAKA, JP |
|
| 8339 | Ceased/non-payment of the annual fee |