DE69221354D1 - Halbleiterrelais - Google Patents
HalbleiterrelaisInfo
- Publication number
- DE69221354D1 DE69221354D1 DE69221354T DE69221354T DE69221354D1 DE 69221354 D1 DE69221354 D1 DE 69221354D1 DE 69221354 T DE69221354 T DE 69221354T DE 69221354 T DE69221354 T DE 69221354T DE 69221354 D1 DE69221354 D1 DE 69221354D1
- Authority
- DE
- Germany
- Prior art keywords
- solid state
- state relay
- relay
- solid
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/678,573 US5138177A (en) | 1991-03-26 | 1991-03-26 | Solid-state relay |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69221354D1 true DE69221354D1 (de) | 1997-09-11 |
DE69221354T2 DE69221354T2 (de) | 1997-11-20 |
Family
ID=24723364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69221354T Expired - Fee Related DE69221354T2 (de) | 1991-03-26 | 1992-03-18 | Halbleiterrelais |
Country Status (4)
Country | Link |
---|---|
US (1) | US5138177A (de) |
EP (1) | EP0506288B1 (de) |
JP (1) | JP2948979B2 (de) |
DE (1) | DE69221354T2 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5278422A (en) * | 1991-09-02 | 1994-01-11 | Matsushita Electric Works, Ltd. | Normally open solid state relay with minimized response time of relay action upon being turned off |
JP2740426B2 (ja) * | 1991-09-02 | 1998-04-15 | 松下電工株式会社 | 半導体リレー |
DE4214920A1 (de) * | 1992-05-11 | 1993-11-18 | Thomson Brandt Gmbh | Verfahren und Vorrichtung zur Sensorsignal-Aufbereitung |
US5221847A (en) * | 1992-06-26 | 1993-06-22 | At&T Bell Laboratories | Break-before-make control for form C solid-state relays with current limiter bypass |
JPH06177418A (ja) * | 1992-12-04 | 1994-06-24 | Toshiba Corp | ホトカプラ装置 |
US5298817A (en) * | 1993-02-09 | 1994-03-29 | At&T Bell Laboratories | High-frequency solid-state relay |
JP3068985B2 (ja) * | 1993-07-29 | 2000-07-24 | 株式会社東芝 | 半導体リレー |
US5360979A (en) * | 1993-08-05 | 1994-11-01 | At&T Bell Laboratories | Fast turn-off circuit for solid-state relays or the like |
US6211551B1 (en) * | 1997-06-30 | 2001-04-03 | Matsushita Electric Works, Ltd. | Solid-state relay |
DE19915836C2 (de) * | 1999-04-08 | 2002-03-07 | Dold & Soehne Kg E | Modulares Gehäusesystem für den Einbau von Steuerungs- und Leistungselektronik |
JP2000349328A (ja) * | 1999-06-07 | 2000-12-15 | Oki Electric Ind Co Ltd | 光結合型半導体スイッチ回路 |
US6894349B2 (en) * | 2001-06-08 | 2005-05-17 | Intersil Americas Inc. | Lateral DMOS structure with lateral extension structure for reduced charge trapping in gate oxide |
US6765247B2 (en) * | 2001-10-12 | 2004-07-20 | Intersil Americas, Inc. | Integrated circuit with a MOS structure having reduced parasitic bipolar transistor action |
US7342447B2 (en) * | 2005-05-09 | 2008-03-11 | Texas Instruments Incorporated | Systems and methods for driving an output transistor |
US7335871B2 (en) * | 2005-10-18 | 2008-02-26 | Honeywell International Inc. | Low power switching for antenna reconfiguration |
DE102007021491A1 (de) * | 2007-05-08 | 2008-11-13 | Robert Bosch Gmbh | Motoranordnung mit elektronischem Trennrelais-Modul |
JP4802227B2 (ja) * | 2008-08-14 | 2011-10-26 | 富士通コンポーネント株式会社 | リレー装置 |
JP4856135B2 (ja) * | 2008-08-14 | 2012-01-18 | 富士通コンポーネント株式会社 | リレー装置 |
US9583413B2 (en) * | 2009-02-13 | 2017-02-28 | Infineon Technologies Ag | Semiconductor device |
US8619395B2 (en) | 2010-03-12 | 2013-12-31 | Arc Suppression Technologies, Llc | Two terminal arc suppressor |
JP5861081B2 (ja) | 2010-06-03 | 2016-02-16 | パナソニックIpマネジメント株式会社 | 半導体装置およびこれを用いた半導体リレー |
JP5659376B2 (ja) * | 2011-06-06 | 2015-01-28 | オプテックス株式会社 | 直流絶縁型の半導体リレー装置 |
JP5563050B2 (ja) * | 2012-12-10 | 2014-07-30 | 株式会社東芝 | ゲート駆動回路、およびパワー半導体モジュール |
KR101730198B1 (ko) * | 2012-12-26 | 2017-04-25 | 삼성전기주식회사 | Spdt 스위치 회로 |
JP5781108B2 (ja) * | 2013-02-28 | 2015-09-16 | 株式会社東芝 | 光結合装置 |
DE102015109167B3 (de) * | 2015-06-10 | 2016-08-11 | Weetech Gmbh | Bidirektionaler MOSFET-Schalter und Multiplexer |
US10338613B2 (en) * | 2016-03-02 | 2019-07-02 | Triune Systems, L.L.C. | Circuits and methods for providing power and data communication in isolated system architectures |
CN110798191A (zh) * | 2019-10-30 | 2020-02-14 | 宋晓东 | 一种常闭直流固态继电器 |
US10879878B1 (en) | 2019-12-16 | 2020-12-29 | Altec Industries, Inc. | Drop-in solid-state relay |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1264513C2 (de) * | 1963-11-29 | 1973-01-25 | Texas Instruments Inc | Bezugspotentialfreier gleichstromdifferenzverstaerker |
US3459943A (en) * | 1967-02-06 | 1969-08-05 | Gen Electric | Silicon controlled rectifier gating circuits with a high frequency triggering voltage and photocells |
JPS5929006B2 (ja) * | 1974-07-19 | 1984-07-17 | 株式会社日立製作所 | 感光半導体スイツチ |
US4227098A (en) * | 1979-02-21 | 1980-10-07 | General Electric Company | Solid state relay |
US4268843A (en) * | 1979-02-21 | 1981-05-19 | General Electric Company | Solid state relay |
US4303831A (en) * | 1979-07-30 | 1981-12-01 | Bell Telephone Laboratories, Incorporated | Optically triggered linear bilateral switch |
US4390790A (en) * | 1979-08-09 | 1983-06-28 | Theta-J Corporation | Solid state optically coupled electrical power switch |
US4408131A (en) * | 1981-09-21 | 1983-10-04 | Westinghouse Electric Corp. | Optically isolated solid state relay |
JPS58136137A (ja) * | 1982-02-08 | 1983-08-13 | Hitachi Ltd | 電界効果トランジスタを用いたインバータ回路 |
US4777387A (en) * | 1984-02-21 | 1988-10-11 | International Rectifier Corporation | Fast turn-off circuit for photovoltaic driven MOSFET |
JPS62100017A (ja) * | 1985-10-25 | 1987-05-09 | Matsushita Electric Works Ltd | 半導体装置 |
JP2522249B2 (ja) * | 1986-06-21 | 1996-08-07 | 日本電気株式会社 | ソリッドステ−トリレ− |
JPS63153916A (ja) * | 1986-08-11 | 1988-06-27 | Matsushita Electric Works Ltd | 半導体スイツチ回路 |
JPS63236411A (ja) * | 1987-03-25 | 1988-10-03 | Matsushita Electric Works Ltd | 固体リレ− |
US4859875A (en) * | 1987-08-28 | 1989-08-22 | Siemens Aktiengesellschaft | Optocoupler for power FET |
US4931656A (en) * | 1988-03-07 | 1990-06-05 | Dionics Inc. | Means to dynamically discharge a capacitively charged electrical device |
US4912335A (en) * | 1988-03-07 | 1990-03-27 | Dionics Inc. | Means for rapid charging and dynamic discharging of a capacitively charged electrical device |
JPH02253718A (ja) * | 1989-03-28 | 1990-10-12 | Matsushita Electric Works Ltd | 固体リレー |
US4902901A (en) * | 1989-04-14 | 1990-02-20 | Hewlett-Packard Company | High-power solid state relay employing photosensitive current augmenting means for faster turn-on time |
JP2555887B2 (ja) * | 1989-06-19 | 1996-11-20 | 日本電気株式会社 | トランスファー型ソリッドステートリレー |
-
1991
- 1991-03-26 US US07/678,573 patent/US5138177A/en not_active Expired - Lifetime
-
1992
- 1992-03-18 DE DE69221354T patent/DE69221354T2/de not_active Expired - Fee Related
- 1992-03-18 EP EP92302309A patent/EP0506288B1/de not_active Expired - Lifetime
- 1992-03-25 JP JP4097422A patent/JP2948979B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0506288B1 (de) | 1997-08-06 |
DE69221354T2 (de) | 1997-11-20 |
EP0506288A3 (en) | 1993-02-10 |
JPH05114847A (ja) | 1993-05-07 |
EP0506288A2 (de) | 1992-09-30 |
JP2948979B2 (ja) | 1999-09-13 |
US5138177A (en) | 1992-08-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |