DE69216329D1 - Optische Halbleitervorrichtung mit einem Halbleiterlaser und einem Photodetektor - Google Patents

Optische Halbleitervorrichtung mit einem Halbleiterlaser und einem Photodetektor

Info

Publication number
DE69216329D1
DE69216329D1 DE69216329T DE69216329T DE69216329D1 DE 69216329 D1 DE69216329 D1 DE 69216329D1 DE 69216329 T DE69216329 T DE 69216329T DE 69216329 T DE69216329 T DE 69216329T DE 69216329 D1 DE69216329 D1 DE 69216329D1
Authority
DE
Germany
Prior art keywords
photodetector
semiconductor device
semiconductor laser
optical
optical semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69216329T
Other languages
English (en)
Other versions
DE69216329T2 (de
Inventor
Koyu Chinen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69216329D1 publication Critical patent/DE69216329D1/de
Application granted granted Critical
Publication of DE69216329T2 publication Critical patent/DE69216329T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
DE69216329T 1991-09-12 1992-09-11 Optische Halbleitervorrichtung mit einem Halbleiterlaser und einem Photodetektor Expired - Fee Related DE69216329T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26048791A JP2980435B2 (ja) 1991-09-12 1991-09-12 半導体装置

Publications (2)

Publication Number Publication Date
DE69216329D1 true DE69216329D1 (de) 1997-02-13
DE69216329T2 DE69216329T2 (de) 1997-05-22

Family

ID=17348651

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69216329T Expired - Fee Related DE69216329T2 (de) 1991-09-12 1992-09-11 Optische Halbleitervorrichtung mit einem Halbleiterlaser und einem Photodetektor

Country Status (5)

Country Link
US (1) US5281829A (de)
EP (1) EP0532025B1 (de)
JP (1) JP2980435B2 (de)
KR (1) KR960005580B1 (de)
DE (1) DE69216329T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669491A (ja) * 1992-08-18 1994-03-11 Fujitsu Ltd 光送受信装置
WO1995020751A1 (de) * 1994-01-26 1995-08-03 Horst Ahlers Temperatursensor
DE19812199C1 (de) * 1998-03-19 1999-11-04 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung und eine mindestens zwei Halbleiterelemente umfassende Halbleiteranordnung
US6137123A (en) * 1999-08-17 2000-10-24 Honeywell International Inc. High gain GaN/AlGaN heterojunction phototransistor
KR100490921B1 (ko) * 1999-10-30 2005-05-19 충남대학교산학협력단 순무피클의 제조방법
US6265237B1 (en) * 1999-12-15 2001-07-24 Lucent Technologies Inc. In-wafer testing of DFB semiconductor lasers
US7009210B2 (en) * 2000-10-06 2006-03-07 Alphion Corporation Method and apparatus for bit-rate and format insensitive performance monitoring of lightwave signals
US6888171B2 (en) * 2000-12-22 2005-05-03 Dallan Luming Science & Technology Group Co., Ltd. Light emitting diode
KR20010025701A (ko) * 2001-01-18 2001-04-06 임준호 생오이를 이용한 피클 제조방법
GB2389957A (en) * 2002-06-19 2003-12-24 Kamelian Ltd Automatic power control of a semiconductor optical amplifier
JP4134695B2 (ja) * 2002-11-21 2008-08-20 住友電気工業株式会社 光モジュール
KR100493089B1 (ko) * 2002-12-17 2005-06-02 삼성전자주식회사 집적광학장치
DE10345555A1 (de) 2003-09-30 2005-05-04 Osram Opto Semiconductors Gmbh Strahlungsemittierendes und -empfangendes Halbleiterbauelement und Verfahren zu dessen Herstellung
KR100750506B1 (ko) * 2004-12-10 2007-08-20 한국전자통신연구원 광감지기를 구비한 표면방출레이저소자 및 이를 적용한광도파로 소자
JP4706970B2 (ja) * 2006-02-16 2011-06-22 古河電気工業株式会社 フォトニック結晶半導体光増幅器および集積型光半導体素子
JP2009283822A (ja) 2008-05-26 2009-12-03 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
DE102009028909A1 (de) 2009-08-26 2011-03-17 Nanoplus Gmbh Nanosystems And Technologies Halbleiterlaser mit auf einem Laserspiegel angebrachtem Absorber
KR102607820B1 (ko) * 2022-10-13 2023-11-29 서미수 다종의 야채와 과일을 포함하는 발효 피클 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148482A (en) * 1979-05-08 1980-11-19 Canon Inc Semiconductor laser device
JPS5831593A (ja) * 1981-08-18 1983-02-24 Nec Corp 光集積化素子
DE3280183D1 (de) * 1981-11-30 1990-06-28 Fujitsu Ltd Optische halbleiteranordnung.
JPS58186986A (ja) * 1982-04-27 1983-11-01 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ
JPS61140189A (ja) * 1984-12-12 1986-06-27 Canon Inc 半導体レ−ザ
JPS61183988A (ja) * 1985-02-08 1986-08-16 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS62145791A (ja) * 1985-12-20 1987-06-29 Agency Of Ind Science & Technol 半導体装置
JPS62150795A (ja) * 1985-12-24 1987-07-04 Mitsubishi Electric Corp 半導体光素子構造
JPS6360563A (ja) * 1986-08-29 1988-03-16 Nec Corp 光電子集積素子

Also Published As

Publication number Publication date
KR960005580B1 (ko) 1996-04-26
JP2980435B2 (ja) 1999-11-22
US5281829A (en) 1994-01-25
JPH0575214A (ja) 1993-03-26
EP0532025B1 (de) 1997-01-02
EP0532025A1 (de) 1993-03-17
KR930006990A (ko) 1993-04-22
DE69216329T2 (de) 1997-05-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee