DE69211508T2 - Verfahren und Geräte zur Einschränkung des Plasma-Ätzgebietes zur Erlangung präziser Formgestaltung von Substratöberflächen - Google Patents
Verfahren und Geräte zur Einschränkung des Plasma-Ätzgebietes zur Erlangung präziser Formgestaltung von SubstratöberflächenInfo
- Publication number
- DE69211508T2 DE69211508T2 DE69211508T DE69211508T DE69211508T2 DE 69211508 T2 DE69211508 T2 DE 69211508T2 DE 69211508 T DE69211508 T DE 69211508T DE 69211508 T DE69211508 T DE 69211508T DE 69211508 T2 DE69211508 T2 DE 69211508T2
- Authority
- DE
- Germany
- Prior art keywords
- plasma
- substrate
- plasma chamber
- radio frequency
- dielectric insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 53
- 238000001020 plasma etching Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title description 24
- 239000012212 insulator Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 5
- 230000008033 biological extinction Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 25
- 238000005530 etching Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 15
- 238000007493 shaping process Methods 0.000 description 8
- 238000012937 correction Methods 0.000 description 6
- 239000000470 constituent Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
- H01J2237/20228—Mechanical X-Y scanning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/807,535 US5336355A (en) | 1991-12-13 | 1991-12-13 | Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69211508D1 DE69211508D1 (de) | 1996-07-18 |
| DE69211508T2 true DE69211508T2 (de) | 1996-10-24 |
Family
ID=25196602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69211508T Expired - Fee Related DE69211508T2 (de) | 1991-12-13 | 1992-12-10 | Verfahren und Geräte zur Einschränkung des Plasma-Ätzgebietes zur Erlangung präziser Formgestaltung von Substratöberflächen |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5336355A (enExample) |
| EP (1) | EP0546842B1 (enExample) |
| JP (1) | JPH0831449B2 (enExample) |
| KR (1) | KR970000695B1 (enExample) |
| DE (1) | DE69211508T2 (enExample) |
| IL (1) | IL104029A (enExample) |
| TW (1) | TW220012B (enExample) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2030811C1 (ru) * | 1991-05-24 | 1995-03-10 | Инженерный центр "Плазмодинамика" | Установка для плазменной обработки твердого тела |
| US5298103A (en) * | 1993-07-15 | 1994-03-29 | Hughes Aircraft Company | Electrode assembly useful in confined plasma assisted chemical etching |
| US5529275A (en) * | 1994-09-08 | 1996-06-25 | Lear Seating Corporation | Vehicle seat track assembly |
| US5891350A (en) | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
| JP3612158B2 (ja) | 1996-11-18 | 2005-01-19 | スピードファム株式会社 | プラズマエッチング方法及びその装置 |
| US5955383A (en) * | 1997-01-22 | 1999-09-21 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for controlling etch rate when using consumable electrodes during plasma etching |
| US6924455B1 (en) | 1997-06-26 | 2005-08-02 | Applied Science & Technology, Inc. | Integrated plasma chamber and inductively-coupled toroidal plasma source |
| US6150628A (en) | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
| US6815633B1 (en) | 1997-06-26 | 2004-11-09 | Applied Science & Technology, Inc. | Inductively-coupled toroidal plasma source |
| US7166816B1 (en) | 1997-06-26 | 2007-01-23 | Mks Instruments, Inc. | Inductively-coupled torodial plasma source |
| US6388226B1 (en) | 1997-06-26 | 2002-05-14 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
| US7569790B2 (en) | 1997-06-26 | 2009-08-04 | Mks Instruments, Inc. | Method and apparatus for processing metal bearing gases |
| US8779322B2 (en) | 1997-06-26 | 2014-07-15 | Mks Instruments Inc. | Method and apparatus for processing metal bearing gases |
| US6506687B1 (en) * | 1998-06-24 | 2003-01-14 | Hitachi, Ltd. | Dry etching device and method of producing semiconductor devices |
| US6074947A (en) * | 1998-07-10 | 2000-06-13 | Plasma Sil, Llc | Process for improving uniform thickness of semiconductor substrates using plasma assisted chemical etching |
| DE19833257C1 (de) * | 1998-07-23 | 1999-09-30 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe |
| US6399432B1 (en) | 1998-11-24 | 2002-06-04 | Philips Semiconductors Inc. | Process to control poly silicon profiles in a dual doped poly silicon process |
| US6261406B1 (en) * | 1999-01-11 | 2001-07-17 | Lsi Logic Corporation | Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface |
| WO2000042632A1 (en) * | 1999-01-12 | 2000-07-20 | Ipec Precision, Inc. | Method and apparatus for generating and confining a reactive gas for etching substrates |
| JP2000256094A (ja) * | 1999-03-08 | 2000-09-19 | Speedfam-Ipec Co Ltd | シリコンエピタキシャル成長ウェーハ製造方法およびその装置 |
| US6294469B1 (en) | 1999-05-21 | 2001-09-25 | Plasmasil, Llc | Silicon wafering process flow |
| US6200908B1 (en) | 1999-08-04 | 2001-03-13 | Memc Electronic Materials, Inc. | Process for reducing waviness in semiconductor wafers |
| US6482744B1 (en) * | 2000-08-16 | 2002-11-19 | Promos Technologies, Inc. | Two step plasma etch using variable electrode spacing |
| AU2002211730A1 (en) * | 2000-10-16 | 2002-04-29 | Tokyo Electron Limited | Plasma reactor with reduced reaction chamber |
| US6486072B1 (en) * | 2000-10-23 | 2002-11-26 | Advanced Micro Devices, Inc. | System and method to facilitate removal of defects from a substrate |
| US7510664B2 (en) * | 2001-01-30 | 2009-03-31 | Rapt Industries, Inc. | Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces |
| US7591957B2 (en) * | 2001-01-30 | 2009-09-22 | Rapt Industries, Inc. | Method for atmospheric pressure reactive atom plasma processing for surface modification |
| JP4460788B2 (ja) * | 2001-02-23 | 2010-05-12 | スピードファム株式会社 | 局所エッチング方法 |
| US6896949B1 (en) | 2001-03-15 | 2005-05-24 | Bookham (Us) Inc. | Wafer scale production of optical elements |
| US20030042227A1 (en) * | 2001-08-29 | 2003-03-06 | Tokyo Electron Limited | Apparatus and method for tailoring an etch profile |
| US6660177B2 (en) | 2001-11-07 | 2003-12-09 | Rapt Industries Inc. | Apparatus and method for reactive atom plasma processing for material deposition |
| US7056416B2 (en) * | 2002-02-15 | 2006-06-06 | Matsushita Electric Industrial Co., Ltd. | Atmospheric pressure plasma processing method and apparatus |
| KR20030081742A (ko) * | 2002-04-12 | 2003-10-22 | 우형철 | 플라즈마를 이용한 에칭처리장치 |
| US6943350B2 (en) * | 2002-08-27 | 2005-09-13 | Kla-Tencor Technologies Corporation | Methods and apparatus for electron beam inspection of samples |
| JP4134741B2 (ja) * | 2003-01-30 | 2008-08-20 | 松下電器産業株式会社 | プラズマエッチング方法 |
| US7371992B2 (en) | 2003-03-07 | 2008-05-13 | Rapt Industries, Inc. | Method for non-contact cleaning of a surface |
| US20040173316A1 (en) * | 2003-03-07 | 2004-09-09 | Carr Jeffrey W. | Apparatus and method using a microwave source for reactive atom plasma processing |
| US7304263B2 (en) | 2003-08-14 | 2007-12-04 | Rapt Industries, Inc. | Systems and methods utilizing an aperture with a reactive atom plasma torch |
| US7297892B2 (en) | 2003-08-14 | 2007-11-20 | Rapt Industries, Inc. | Systems and methods for laser-assisted plasma processing |
| KR100553713B1 (ko) * | 2004-06-03 | 2006-02-24 | 삼성전자주식회사 | 플라즈마 식각 장치 및 이 장치를 이용한 포토 마스크의제조 방법 |
| US20070063654A1 (en) * | 2005-09-21 | 2007-03-22 | Mehan Vijay K | Method and apparatus for ionization treatment of gases |
| EP1772901B1 (en) * | 2005-10-07 | 2012-07-25 | Rohm and Haas Electronic Materials, L.L.C. | Wafer holding article and method for semiconductor processing |
| CN101534869A (zh) * | 2006-09-05 | 2009-09-16 | 艾尔廸科技有限公司 | 扩散式等离子体处理和材料加工 |
| CN101809720A (zh) * | 2007-09-28 | 2010-08-18 | 东京毅力科创株式会社 | 等离子体处理方法和等离子体处理装置 |
| KR101384655B1 (ko) * | 2013-03-26 | 2014-04-14 | (주)지엔티 | 디스플레이 패널 에칭 장치 및 이를 이용한 에칭 방법 |
| KR102618488B1 (ko) * | 2014-11-23 | 2023-12-27 | 엠 큐브드 테크놀로지스 | 웨이퍼 핀 척 제조 및 수리 |
| WO2018093874A1 (en) * | 2016-11-15 | 2018-05-24 | Applied Materials, Inc. | Dynamic phased array plasma source for complete plasma coverage of a moving substrate |
| CN112309807B (zh) * | 2019-08-02 | 2022-12-30 | 中微半导体设备(上海)股份有限公司 | 等离子体刻蚀设备 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4088926A (en) * | 1976-05-10 | 1978-05-09 | Nasa | Plasma cleaning device |
| JPS57174467A (en) * | 1981-04-20 | 1982-10-27 | Inoue Japax Res Inc | Ion working device |
| US4668366A (en) * | 1984-08-02 | 1987-05-26 | The Perkin-Elmer Corporation | Optical figuring by plasma assisted chemical transport and etching apparatus therefor |
| JPS61139029A (ja) * | 1984-12-10 | 1986-06-26 | Mitsubishi Electric Corp | シリコンイオンビ−ムによる加工方法 |
| US4859908A (en) * | 1986-09-24 | 1989-08-22 | Matsushita Electric Industrial Co., Ltd. | Plasma processing apparatus for large area ion irradiation |
| CA1336180C (en) * | 1987-03-27 | 1995-07-04 | Kazuaki Ohmi | Substrate-treating apparatus and method |
| US4853250A (en) * | 1988-05-11 | 1989-08-01 | Universite De Sherbrooke | Process of depositing particulate material on a substrate |
| US5000771A (en) * | 1989-12-29 | 1991-03-19 | At&T Bell Laboratories | Method for manufacturing an article comprising a refractory dielectric body |
| JP2657850B2 (ja) * | 1990-10-23 | 1997-09-30 | 株式会社半導体エネルギー研究所 | プラズマ発生装置およびそれを用いたエッチング方法 |
| JPH0817171B2 (ja) * | 1990-12-31 | 1996-02-21 | 株式会社半導体エネルギー研究所 | プラズマ発生装置およびそれを用いたエッチング方法 |
| DE4119362A1 (de) * | 1991-06-12 | 1992-12-17 | Leybold Ag | Teilchenquelle, insbesondere fuer reaktive ionenaetz- und plasmaunterstuetzte cvd-verfahren |
-
1991
- 1991-12-13 US US07/807,535 patent/US5336355A/en not_active Expired - Fee Related
-
1992
- 1992-12-08 IL IL10402992A patent/IL104029A/en not_active IP Right Cessation
- 1992-12-10 DE DE69211508T patent/DE69211508T2/de not_active Expired - Fee Related
- 1992-12-10 EP EP92311317A patent/EP0546842B1/en not_active Expired - Lifetime
- 1992-12-12 KR KR1019920024056A patent/KR970000695B1/ko not_active Expired - Fee Related
- 1992-12-14 JP JP4333308A patent/JPH0831449B2/ja not_active Expired - Fee Related
- 1992-12-21 TW TW081110252A patent/TW220012B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP0546842B1 (en) | 1996-06-12 |
| US5336355A (en) | 1994-08-09 |
| KR930014812A (ko) | 1993-07-23 |
| TW220012B (enExample) | 1994-02-01 |
| JPH05347277A (ja) | 1993-12-27 |
| JPH0831449B2 (ja) | 1996-03-27 |
| KR970000695B1 (ko) | 1997-01-18 |
| EP0546842A1 (en) | 1993-06-16 |
| DE69211508D1 (de) | 1996-07-18 |
| IL104029A0 (en) | 1993-05-13 |
| IL104029A (en) | 1995-12-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: IPEC PRECISION, INC.(N.D.GES.D.STAATES DELAWARE), |
|
| 8339 | Ceased/non-payment of the annual fee |