KR970000695B1 - 기판 및 박막의 표면을 고정밀 형상 가공하기 위해 플라즈마 에치 영역을 제한하기 위한 방법 및 장치 - Google Patents

기판 및 박막의 표면을 고정밀 형상 가공하기 위해 플라즈마 에치 영역을 제한하기 위한 방법 및 장치 Download PDF

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Publication number
KR970000695B1
KR970000695B1 KR1019920024056A KR920024056A KR970000695B1 KR 970000695 B1 KR970000695 B1 KR 970000695B1 KR 1019920024056 A KR1019920024056 A KR 1019920024056A KR 920024056 A KR920024056 A KR 920024056A KR 970000695 B1 KR970000695 B1 KR 970000695B1
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KR
South Korea
Prior art keywords
plasma
plasma chamber
substrate
high frequency
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019920024056A
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English (en)
Korean (ko)
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KR930014812A (ko
Inventor
비. 자로윈 찰스
데이비드 볼링거 엘.
Original Assignee
휴우즈 에어크라프트 캄파니
완다 케이. 덴슨-로우
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Publication of KR930014812A publication Critical patent/KR930014812A/ko
Application granted granted Critical
Publication of KR970000695B1 publication Critical patent/KR970000695B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
KR1019920024056A 1991-12-13 1992-12-12 기판 및 박막의 표면을 고정밀 형상 가공하기 위해 플라즈마 에치 영역을 제한하기 위한 방법 및 장치 Expired - Fee Related KR970000695B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/807,535 US5336355A (en) 1991-12-13 1991-12-13 Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films
US807,535 1991-12-13

Publications (2)

Publication Number Publication Date
KR930014812A KR930014812A (ko) 1993-07-23
KR970000695B1 true KR970000695B1 (ko) 1997-01-18

Family

ID=25196602

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920024056A Expired - Fee Related KR970000695B1 (ko) 1991-12-13 1992-12-12 기판 및 박막의 표면을 고정밀 형상 가공하기 위해 플라즈마 에치 영역을 제한하기 위한 방법 및 장치

Country Status (7)

Country Link
US (1) US5336355A (enExample)
EP (1) EP0546842B1 (enExample)
JP (1) JPH0831449B2 (enExample)
KR (1) KR970000695B1 (enExample)
DE (1) DE69211508T2 (enExample)
IL (1) IL104029A (enExample)
TW (1) TW220012B (enExample)

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US5955383A (en) * 1997-01-22 1999-09-21 Taiwan Semiconductor Manufacturing Company Ltd. Method for controlling etch rate when using consumable electrodes during plasma etching
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US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US7166816B1 (en) 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US7569790B2 (en) 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US6506687B1 (en) * 1998-06-24 2003-01-14 Hitachi, Ltd. Dry etching device and method of producing semiconductor devices
US6074947A (en) * 1998-07-10 2000-06-13 Plasma Sil, Llc Process for improving uniform thickness of semiconductor substrates using plasma assisted chemical etching
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6399432B1 (en) 1998-11-24 2002-06-04 Philips Semiconductors Inc. Process to control poly silicon profiles in a dual doped poly silicon process
US6261406B1 (en) * 1999-01-11 2001-07-17 Lsi Logic Corporation Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface
WO2000042632A1 (en) * 1999-01-12 2000-07-20 Ipec Precision, Inc. Method and apparatus for generating and confining a reactive gas for etching substrates
JP2000256094A (ja) * 1999-03-08 2000-09-19 Speedfam-Ipec Co Ltd シリコンエピタキシャル成長ウェーハ製造方法およびその装置
US6294469B1 (en) 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
US6200908B1 (en) 1999-08-04 2001-03-13 Memc Electronic Materials, Inc. Process for reducing waviness in semiconductor wafers
US6482744B1 (en) * 2000-08-16 2002-11-19 Promos Technologies, Inc. Two step plasma etch using variable electrode spacing
AU2002211730A1 (en) * 2000-10-16 2002-04-29 Tokyo Electron Limited Plasma reactor with reduced reaction chamber
US6486072B1 (en) * 2000-10-23 2002-11-26 Advanced Micro Devices, Inc. System and method to facilitate removal of defects from a substrate
US7510664B2 (en) * 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
JP4460788B2 (ja) * 2001-02-23 2010-05-12 スピードファム株式会社 局所エッチング方法
US6896949B1 (en) 2001-03-15 2005-05-24 Bookham (Us) Inc. Wafer scale production of optical elements
US20030042227A1 (en) * 2001-08-29 2003-03-06 Tokyo Electron Limited Apparatus and method for tailoring an etch profile
US6660177B2 (en) 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
US7056416B2 (en) * 2002-02-15 2006-06-06 Matsushita Electric Industrial Co., Ltd. Atmospheric pressure plasma processing method and apparatus
KR20030081742A (ko) * 2002-04-12 2003-10-22 우형철 플라즈마를 이용한 에칭처리장치
US6943350B2 (en) * 2002-08-27 2005-09-13 Kla-Tencor Technologies Corporation Methods and apparatus for electron beam inspection of samples
JP4134741B2 (ja) * 2003-01-30 2008-08-20 松下電器産業株式会社 プラズマエッチング方法
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US20040173316A1 (en) * 2003-03-07 2004-09-09 Carr Jeffrey W. Apparatus and method using a microwave source for reactive atom plasma processing
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KR101384655B1 (ko) * 2013-03-26 2014-04-14 (주)지엔티 디스플레이 패널 에칭 장치 및 이를 이용한 에칭 방법
KR102618488B1 (ko) * 2014-11-23 2023-12-27 엠 큐브드 테크놀로지스 웨이퍼 핀 척 제조 및 수리
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CN112309807B (zh) * 2019-08-02 2022-12-30 中微半导体设备(上海)股份有限公司 等离子体刻蚀设备

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Also Published As

Publication number Publication date
EP0546842B1 (en) 1996-06-12
US5336355A (en) 1994-08-09
KR930014812A (ko) 1993-07-23
TW220012B (enExample) 1994-02-01
JPH05347277A (ja) 1993-12-27
DE69211508T2 (de) 1996-10-24
JPH0831449B2 (ja) 1996-03-27
EP0546842A1 (en) 1993-06-16
DE69211508D1 (de) 1996-07-18
IL104029A0 (en) 1993-05-13
IL104029A (en) 1995-12-08

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