DE69209478T2 - Rohreinrichtung zur Herstellung eines Halbleiterbauelementes - Google Patents

Rohreinrichtung zur Herstellung eines Halbleiterbauelementes

Info

Publication number
DE69209478T2
DE69209478T2 DE69209478T DE69209478T DE69209478T2 DE 69209478 T2 DE69209478 T2 DE 69209478T2 DE 69209478 T DE69209478 T DE 69209478T DE 69209478 T DE69209478 T DE 69209478T DE 69209478 T2 DE69209478 T2 DE 69209478T2
Authority
DE
Germany
Prior art keywords
production
semiconductor component
pipe device
pipe
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69209478T
Other languages
English (en)
Other versions
DE69209478D1 (de
Inventor
Chang-Jip Yang
Kyu-Bok Ryu
Jung-Soo An
Jun-Geen An
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE69209478D1 publication Critical patent/DE69209478D1/de
Publication of DE69209478T2 publication Critical patent/DE69209478T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
DE69209478T 1992-01-06 1992-12-17 Rohreinrichtung zur Herstellung eines Halbleiterbauelementes Expired - Fee Related DE69209478T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920000054A KR950006969B1 (ko) 1992-01-06 1992-01-06 반도체 제조용 튜브장치

Publications (2)

Publication Number Publication Date
DE69209478D1 DE69209478D1 (de) 1996-05-02
DE69209478T2 true DE69209478T2 (de) 1996-10-02

Family

ID=19327562

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69209478T Expired - Fee Related DE69209478T2 (de) 1992-01-06 1992-12-17 Rohreinrichtung zur Herstellung eines Halbleiterbauelementes

Country Status (6)

Country Link
US (1) US5352293A (de)
EP (1) EP0550859B1 (de)
JP (1) JPH0824108B2 (de)
KR (1) KR950006969B1 (de)
DE (1) DE69209478T2 (de)
TW (1) TW257880B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5997588A (en) * 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
US20050139321A1 (en) * 2002-07-03 2005-06-30 Tokyo Electron Limited Plasma processing apparatus
US7822598B2 (en) * 2004-02-27 2010-10-26 Dictaphone Corporation System and method for normalization of a string of words

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3314393A (en) * 1962-07-05 1967-04-18 Nippon Electric Co Vapor deposition device
DE2220807A1 (de) * 1971-04-30 1972-11-16 Texas Instruments Inc Verfahren und Vorrichtung zum Abscheiden von polykristallinen Duennfilmen aus Silicium und Siliciumdioxid auf Halbleitersubstraten
JPS5057380A (de) * 1973-09-19 1975-05-19
JPS5171674A (ja) * 1974-12-18 1976-06-21 Mitsubishi Electric Corp Handotaisochinoseizohoho
JPS5923464B2 (ja) * 1979-04-18 1984-06-02 テルサ−ムコ株式会社 半導体熱処理装置
JPS5664441A (en) * 1979-10-30 1981-06-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4732110A (en) * 1983-04-29 1988-03-22 Hughes Aircraft Company Inverted positive vertical flow chemical vapor deposition reactor chamber
US4640223A (en) * 1984-07-24 1987-02-03 Dozier Alfred R Chemical vapor deposition reactor
JPS62166624U (de) * 1986-04-14 1987-10-22
US4753192A (en) * 1987-01-08 1988-06-28 Btu Engineering Corporation Movable core fast cool-down furnace
JPH01125821A (ja) * 1987-11-10 1989-05-18 Matsushita Electric Ind Co Ltd 気相成長装置
US4793283A (en) * 1987-12-10 1988-12-27 Sarkozy Robert F Apparatus for chemical vapor deposition with clean effluent and improved product yield
JPH02133919A (ja) * 1988-11-14 1990-05-23 Fuji Electric Co Ltd 半導体ウエハの拡散装置
JPH0311623A (ja) * 1989-06-09 1991-01-18 Toshiba Ceramics Co Ltd 半導体熱処理用炉芯管
US5064367A (en) * 1989-06-28 1991-11-12 Digital Equipment Corporation Conical gas inlet for thermal processing furnace

Also Published As

Publication number Publication date
US5352293A (en) 1994-10-04
DE69209478D1 (de) 1996-05-02
JPH0824108B2 (ja) 1996-03-06
TW257880B (de) 1995-09-21
KR950006969B1 (ko) 1995-06-26
EP0550859A1 (de) 1993-07-14
JPH0684815A (ja) 1994-03-25
EP0550859B1 (de) 1996-03-27
KR930017083A (ko) 1993-08-30

Similar Documents

Publication Publication Date Title
DE69309763T2 (de) Vorrichtung zur Herstellung von Rohren
DE69229431D1 (de) Einrichtung und vorrichtung zur herstellung eines halbleiterbauelementes
DE69204386T2 (de) Verfahren zur Herstellung eines polykristallinen Siliziumfilmes.
DE69332511D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69333282D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69010635D1 (de) Gerät zur Herstellung eines Kiesmantels.
DE69226523T2 (de) Druckkompensierte vorrichtung zur flüssigkeitsverabreichung
DE69305318T2 (de) Verfahren zur Herstellung eines Siliziumoxid-Filmes
DE69514201D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE59304593D1 (de) Verfahren zur Herstellung eines Bauelementes mit porösem Silizium
DE69205640T2 (de) Verfahren zur Herstellung eines Mikroelektronisches Bauelement.
DE69218069T2 (de) Verfahren zur Herstellung eines planarisierten Halbleiterbauelementes
DE69112545T2 (de) Verfahren zur Herstellung eines Halbleiterbauelementes.
DE69120865D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE59306861D1 (de) Verfahren zur Herstellung eines Rohrgelenks
DE69524117T2 (de) Gerät zur bestätigung des stillstands eines beweglichen teiles
DE59209342D1 (de) Vorrichtung zur Herstellung von Kunststoff-Rohren
DE69402024D1 (de) Verfahren zur Herstellung eines Diamanthalbleiters
DE69301035D1 (de) Verfahren zur Herstellung eines Silizium-Einkristalls
DE69209478D1 (de) Rohreinrichtung zur Herstellung eines Halbleiterbauelementes
DE59303002D1 (de) Vorrichtung zur Herstellung eines Betonrohres
DE69417805D1 (de) Verfahren zur Herstellung eines Halbleitermaterials
DE69207260T2 (de) Einrichtung für die Gasströme eines Mehrfachgeschossbehälters
DE69013064T2 (de) Verfahren zur Herstellung eines Halbleiter-Bauelements.
DE59302583D1 (de) Verfahren zur Herstellung eines Siliziumnitridpulvers

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee