DE69202867D1 - Ofenstruktur einer Herstellungsvorrichtung für Halbleiter. - Google Patents

Ofenstruktur einer Herstellungsvorrichtung für Halbleiter.

Info

Publication number
DE69202867D1
DE69202867D1 DE69202867T DE69202867T DE69202867D1 DE 69202867 D1 DE69202867 D1 DE 69202867D1 DE 69202867 T DE69202867 T DE 69202867T DE 69202867 T DE69202867 T DE 69202867T DE 69202867 D1 DE69202867 D1 DE 69202867D1
Authority
DE
Germany
Prior art keywords
semiconductor manufacturing
manufacturing device
oven structure
oven
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69202867T
Other languages
English (en)
Other versions
DE69202867T2 (de
Inventor
Yasuyoshi Kawase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69202867D1 publication Critical patent/DE69202867D1/de
Application granted granted Critical
Publication of DE69202867T2 publication Critical patent/DE69202867T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/02—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity of multiple-track type; of multiple-chamber type; Combinations of furnaces
    • F27B9/028—Multi-chamber type furnaces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F27D2019/0084—Controlling closure systems, e.g. doors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
DE69202867T 1991-01-10 1992-01-09 Ofenstruktur einer Herstellungsvorrichtung für Halbleiter. Expired - Fee Related DE69202867T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3001365A JPH04297025A (ja) 1991-01-10 1991-01-10 半導体製造装置

Publications (2)

Publication Number Publication Date
DE69202867D1 true DE69202867D1 (de) 1995-07-20
DE69202867T2 DE69202867T2 (de) 1995-11-23

Family

ID=11499474

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69202867T Expired - Fee Related DE69202867T2 (de) 1991-01-10 1992-01-09 Ofenstruktur einer Herstellungsvorrichtung für Halbleiter.

Country Status (4)

Country Link
US (1) US5232506A (de)
EP (1) EP0494783B1 (de)
JP (1) JPH04297025A (de)
DE (1) DE69202867T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316794A (en) * 1992-12-11 1994-05-31 Applied Materials, Inc. Method for servicing vacuum chamber using non-reactive gas-filled maintenance enclosure
JPH06295915A (ja) * 1993-04-09 1994-10-21 F T L:Kk 半導体装置の製造装置及び半導体装置の製造方法
US6161311A (en) * 1998-07-10 2000-12-19 Asm America, Inc. System and method for reducing particles in epitaxial reactors
JP2001085346A (ja) * 1999-09-17 2001-03-30 Nec Kyushu Ltd 半導体装置の製造装置及び半導体装置の製造方法
US6483081B1 (en) * 2000-11-27 2002-11-19 Novellus Systems, Inc. In-line cure furnace and method for using the same
US9748125B2 (en) 2012-01-31 2017-08-29 Applied Materials, Inc. Continuous substrate processing system

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584811B2 (ja) * 1978-10-31 1983-01-27 富士通株式会社 半導体装置の製造方法
JPS5916328A (ja) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
US4817557A (en) * 1983-05-23 1989-04-04 Anicon, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
JPS60170234A (ja) * 1984-02-15 1985-09-03 Semiconductor Energy Lab Co Ltd 気相反応装置および気相反応被膜作製方法
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
JPS61291032A (ja) * 1985-06-17 1986-12-20 Fujitsu Ltd 真空装置
JPS63109174A (ja) * 1986-10-24 1988-05-13 Hitachi Ltd 枚葉式ｃｖｄ装置
JPS63157870A (ja) * 1986-12-19 1988-06-30 Anelva Corp 基板処理装置
JPH01125821A (ja) * 1987-11-10 1989-05-18 Matsushita Electric Ind Co Ltd 気相成長装置

Also Published As

Publication number Publication date
US5232506A (en) 1993-08-03
EP0494783B1 (de) 1995-06-14
DE69202867T2 (de) 1995-11-23
EP0494783A1 (de) 1992-07-15
JPH04297025A (ja) 1992-10-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee