DE69132468T2 - Selbst ausrichtende Kollektor-Implantation für bipolare Transistoren - Google Patents
Selbst ausrichtende Kollektor-Implantation für bipolare TransistorenInfo
- Publication number
- DE69132468T2 DE69132468T2 DE69132468T DE69132468T DE69132468T2 DE 69132468 T2 DE69132468 T2 DE 69132468T2 DE 69132468 T DE69132468 T DE 69132468T DE 69132468 T DE69132468 T DE 69132468T DE 69132468 T2 DE69132468 T2 DE 69132468T2
- Authority
- DE
- Germany
- Prior art keywords
- self
- bipolar transistors
- collector implantation
- aligning
- aligning collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002513 implantation Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/01—Bipolar transistors-ion implantation
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/543,907 US5071778A (en) | 1990-06-26 | 1990-06-26 | Self-aligned collector implant for bipolar transistors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69132468D1 DE69132468D1 (de) | 2000-12-21 |
DE69132468T2 true DE69132468T2 (de) | 2001-05-31 |
Family
ID=24170011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69132468T Expired - Fee Related DE69132468T2 (de) | 1990-06-26 | 1991-06-12 | Selbst ausrichtende Kollektor-Implantation für bipolare Transistoren |
Country Status (5)
Country | Link |
---|---|
US (1) | US5071778A (de) |
EP (1) | EP0463476B1 (de) |
JP (1) | JP3459657B2 (de) |
KR (1) | KR100228755B1 (de) |
DE (1) | DE69132468T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100234550B1 (ko) * | 1990-04-02 | 1999-12-15 | 클라크 3세 존 엠 | 증가된 항복 전압을 지닌 트랜지스터 디바이스 및 제조방법 |
WO1993016494A1 (en) * | 1992-01-31 | 1993-08-19 | Analog Devices, Inc. | Complementary bipolar polysilicon emitter devices |
US6011283A (en) * | 1992-10-19 | 2000-01-04 | Hyundai Electronics America | Pillar emitter for BiCMOS devices |
US5548158A (en) * | 1994-09-02 | 1996-08-20 | National Semiconductor Corporation | Structure of bipolar transistors with improved output current-voltage characteristics |
JPH09129747A (ja) * | 1995-11-06 | 1997-05-16 | Toshiba Corp | 半導体装置の製造方法 |
JPH10289961A (ja) * | 1997-04-15 | 1998-10-27 | Nec Corp | 半導体装置の製造方法 |
SE511891C2 (sv) * | 1997-08-29 | 1999-12-13 | Ericsson Telefon Ab L M | Bipolär effekttransistor och framställningsförfarande |
US6180478B1 (en) | 1999-04-19 | 2001-01-30 | Industrial Technology Research Institute | Fabrication process for a single polysilicon layer, bipolar junction transistor featuring reduced junction capacitance |
US6524904B1 (en) * | 1999-04-20 | 2003-02-25 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating semiconductor device |
DE10000645A1 (de) * | 2000-01-11 | 2001-07-12 | Inst Halbleiterphysik Gmbh | Bipolartransistor und Verfahren zu seiner Herstellung |
KR20010073440A (ko) * | 2000-01-14 | 2001-08-01 | 최인도 | 패류채취장치 |
US6352901B1 (en) | 2000-03-24 | 2002-03-05 | Industrial Technology Research Institute | Method of fabricating a bipolar junction transistor using multiple selectively implanted collector regions |
US6602747B1 (en) * | 2002-06-26 | 2003-08-05 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for fabricating bipolar complementary metal oxide semiconductor (BiCMOS) device structure |
SE0302594D0 (sv) * | 2003-09-30 | 2003-09-30 | Infineon Technologies Ag | Vertical DMOS transistor device, integrated circuit, and fabrication method thereof |
US7390720B2 (en) * | 2006-10-05 | 2008-06-24 | International Business Machines Corporation | Local collector implant structure for heterojunction bipolar transistors and method of forming the same |
US20080237657A1 (en) * | 2007-03-26 | 2008-10-02 | Dsm Solution, Inc. | Signaling circuit and method for integrated circuit devices and systems |
US7820532B2 (en) * | 2008-12-29 | 2010-10-26 | Honeywell International Inc. | Methods for simultaneously forming doped regions having different conductivity-determining type element profiles |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3955269A (en) * | 1975-06-19 | 1976-05-11 | International Business Machines Corporation | Fabricating high performance integrated bipolar and complementary field effect transistors |
US4507847A (en) * | 1982-06-22 | 1985-04-02 | Ncr Corporation | Method of making CMOS by twin-tub process integrated with a vertical bipolar transistor |
JPS58225663A (ja) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | 半導体装置の製造方法 |
US4536945A (en) * | 1983-11-02 | 1985-08-27 | National Semiconductor Corporation | Process for producing CMOS structures with Schottky bipolar transistors |
US4609568A (en) * | 1984-07-27 | 1986-09-02 | Fairchild Camera & Instrument Corporation | Self-aligned metal silicide process for integrated circuits having self-aligned polycrystalline silicon electrodes |
US4764480A (en) * | 1985-04-01 | 1988-08-16 | National Semiconductor Corporation | Process for making high performance CMOS and bipolar integrated devices on one substrate with reduced cell size |
EP0278619B1 (de) * | 1987-01-30 | 1993-12-08 | Texas Instruments Incorporated | Verfahren zum Herstellen integrierter Strukturen aus bipolaren und CMOS-Transistoren |
US4816423A (en) * | 1987-05-01 | 1989-03-28 | Texas Instruments Incorporated | Bicmos process for forming shallow npn emitters and mosfet source/drains |
US4774204A (en) * | 1987-06-02 | 1988-09-27 | Texas Instruments Incorporated | Method for forming self-aligned emitters and bases and source/drains in an integrated circuit |
-
1990
- 1990-06-26 US US07/543,907 patent/US5071778A/en not_active Expired - Lifetime
-
1991
- 1991-06-12 DE DE69132468T patent/DE69132468T2/de not_active Expired - Fee Related
- 1991-06-12 EP EP91109630A patent/EP0463476B1/de not_active Expired - Lifetime
- 1991-06-25 KR KR1019910010564A patent/KR100228755B1/ko not_active IP Right Cessation
- 1991-06-26 JP JP15439791A patent/JP3459657B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0463476A2 (de) | 1992-01-02 |
EP0463476A3 (en) | 1992-06-17 |
KR920001655A (ko) | 1992-01-30 |
US5071778A (en) | 1991-12-10 |
DE69132468D1 (de) | 2000-12-21 |
KR100228755B1 (ko) | 1999-11-01 |
EP0463476B1 (de) | 2000-11-15 |
JP3459657B2 (ja) | 2003-10-20 |
JPH0684933A (ja) | 1994-03-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |