DE69131252T2 - Thermische behandlungsmethode für halbleiterscheiben - Google Patents
Thermische behandlungsmethode für halbleiterscheibenInfo
- Publication number
- DE69131252T2 DE69131252T2 DE69131252T DE69131252T DE69131252T2 DE 69131252 T2 DE69131252 T2 DE 69131252T2 DE 69131252 T DE69131252 T DE 69131252T DE 69131252 T DE69131252 T DE 69131252T DE 69131252 T2 DE69131252 T2 DE 69131252T2
- Authority
- DE
- Germany
- Prior art keywords
- heat treatment
- wafers
- temperature
- concentration
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000000034 method Methods 0.000 title claims description 28
- 238000007669 thermal treatment Methods 0.000 title 1
- 238000010438 heat treatment Methods 0.000 claims description 87
- 235000012431 wafers Nutrition 0.000 claims description 61
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 46
- 229910052760 oxygen Inorganic materials 0.000 claims description 46
- 239000001301 oxygen Substances 0.000 claims description 46
- 239000013078 crystal Substances 0.000 claims description 44
- 238000005247 gettering Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 7
- 239000002244 precipitate Substances 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 2
- 238000011088 calibration curve Methods 0.000 claims 3
- 238000001556 precipitation Methods 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000004088 simulation Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2250226A JPH0750713B2 (ja) | 1990-09-21 | 1990-09-21 | 半導体ウェーハの熱処理方法 |
| PCT/JP1991/001259 WO1992005579A1 (fr) | 1990-09-21 | 1991-09-20 | Procede de traitement thermique de tranches de semi-conducteurs |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69131252D1 DE69131252D1 (de) | 1999-06-24 |
| DE69131252T2 true DE69131252T2 (de) | 2000-02-24 |
Family
ID=17204718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69131252T Expired - Lifetime DE69131252T2 (de) | 1990-09-21 | 1991-09-20 | Thermische behandlungsmethode für halbleiterscheiben |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5385115A (cg-RX-API-DMAC7.html) |
| EP (1) | EP0550750B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JPH0750713B2 (cg-RX-API-DMAC7.html) |
| DE (1) | DE69131252T2 (cg-RX-API-DMAC7.html) |
| WO (1) | WO1992005579A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3011982B2 (ja) * | 1990-09-14 | 2000-02-21 | コマツ電子金属株式会社 | 半導体装置の製造方法 |
| JP2613498B2 (ja) * | 1991-03-15 | 1997-05-28 | 信越半導体株式会社 | Ｓｉ単結晶ウエーハの熱処理方法 |
| JPH0684925A (ja) * | 1992-07-17 | 1994-03-25 | Toshiba Corp | 半導体基板およびその処理方法 |
| JP3232168B2 (ja) * | 1993-07-02 | 2001-11-26 | 三菱電機株式会社 | 半導体基板およびその製造方法ならびにその半導体基板を用いた半導体装置 |
| US5593494A (en) * | 1995-03-14 | 1997-01-14 | Memc Electronic Materials, Inc. | Precision controlled precipitation of oxygen in silicon |
| KR100240023B1 (ko) * | 1996-11-29 | 2000-01-15 | 윤종용 | 반도체 웨이퍼 열처리방법 및 이에 따라 형성된 반도체 웨이퍼 |
| DE69908965T2 (de) * | 1998-10-14 | 2004-05-13 | Memc Electronic Materials, Inc. | Wärmegetempertes einkristallines silizium mit niedriger fehlerdichte |
| TWI290182B (en) * | 2004-01-27 | 2007-11-21 | Sumco Techxiv Corp | Method for predicting precipitation behavior of oxygen in silicon single crystal, determining production parameter thereof, and storage medium storing program for predicting precipitation behavior of oxygen in silicon single crystal |
| WO2006125069A2 (en) * | 2005-05-19 | 2006-11-23 | Memc Electronic Materials, Inc. | A high resistivity silicon structure and a process for the preparation thereof |
| FR2964459B1 (fr) * | 2010-09-02 | 2012-09-28 | Commissariat Energie Atomique | Procede de cartographie de la concentration en oxygene |
| US20150294868A1 (en) * | 2014-04-15 | 2015-10-15 | Infineon Technologies Ag | Method of Manufacturing Semiconductor Devices Containing Chalcogen Atoms |
| JP6716344B2 (ja) * | 2016-06-01 | 2020-07-01 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
| JP6878188B2 (ja) * | 2017-07-26 | 2021-05-26 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの抵抗率測定方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4140570A (en) * | 1973-11-19 | 1979-02-20 | Texas Instruments Incorporated | Method of growing single crystal silicon by the Czochralski method which eliminates the need for post growth annealing for resistivity stabilization |
| JPS583374B2 (ja) * | 1977-06-15 | 1983-01-21 | 超エル・エス・アイ技術研究組合 | シリコン単結晶の処理方法 |
| FR2435818A1 (fr) * | 1978-09-08 | 1980-04-04 | Ibm France | Procede pour accroitre l'effet de piegeage interne des corps semi-conducteurs |
| FR2460479A1 (fr) * | 1979-06-29 | 1981-01-23 | Ibm France | Procede de caracterisation de la teneur en oxygene des barreaux de silicium tires selon la methode czochralski |
| JPS5680139A (en) * | 1979-12-05 | 1981-07-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS5830137A (ja) * | 1981-08-18 | 1983-02-22 | Toshiba Corp | ウエ−ハの製造方法 |
| JPS6066827A (ja) * | 1983-09-24 | 1985-04-17 | Mitsubishi Metal Corp | シリコンウエハ−中への結晶欠陥導入制御法 |
| EP0165364B1 (fr) * | 1984-06-20 | 1988-09-07 | International Business Machines Corporation | Procédé de standardisation et de stabilisation de tranches semiconductrices |
| US4622082A (en) * | 1984-06-25 | 1986-11-11 | Monsanto Company | Conditioned semiconductor substrates |
| US5066599A (en) * | 1989-07-27 | 1991-11-19 | Fujitsu Limited | Silicon crystal oxygen evaluation method using fourier transform infrared spectroscopy (ftir) and semiconductor device fabrication method using the same |
| US5096839A (en) * | 1989-09-20 | 1992-03-17 | Kabushiki Kaisha Toshiba | Silicon wafer with defined interstitial oxygen concentration |
-
1990
- 1990-09-21 JP JP2250226A patent/JPH0750713B2/ja not_active Expired - Lifetime
-
1991
- 1991-09-20 DE DE69131252T patent/DE69131252T2/de not_active Expired - Lifetime
- 1991-09-20 US US08/030,356 patent/US5385115A/en not_active Expired - Lifetime
- 1991-09-20 WO PCT/JP1991/001259 patent/WO1992005579A1/ja not_active Ceased
- 1991-09-20 EP EP91916605A patent/EP0550750B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04130732A (ja) | 1992-05-01 |
| EP0550750A1 (en) | 1993-07-14 |
| JPH0750713B2 (ja) | 1995-05-31 |
| EP0550750B1 (en) | 1999-05-19 |
| US5385115A (en) | 1995-01-31 |
| DE69131252D1 (de) | 1999-06-24 |
| EP0550750A4 (cg-RX-API-DMAC7.html) | 1994-01-19 |
| WO1992005579A1 (fr) | 1992-04-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |