DE69129722T2 - Verfahren für das selektive Wachstum einer Dünnschicht auf einem gemusterten Substrat - Google Patents

Verfahren für das selektive Wachstum einer Dünnschicht auf einem gemusterten Substrat

Info

Publication number
DE69129722T2
DE69129722T2 DE69129722T DE69129722T DE69129722T2 DE 69129722 T2 DE69129722 T2 DE 69129722T2 DE 69129722 T DE69129722 T DE 69129722T DE 69129722 T DE69129722 T DE 69129722T DE 69129722 T2 DE69129722 T2 DE 69129722T2
Authority
DE
Germany
Prior art keywords
gas
vacuum chamber
reacting gas
wafer
molecules
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69129722T
Other languages
German (de)
English (en)
Other versions
DE69129722D1 (de
Inventor
Ken-Ichi Fuchu-Shi Tokyo Aketagawa
Junro Fuchu-Shi Tokyo Sakai
Toru Minato-Ku Tokyo Tatsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
NEC Corp
Original Assignee
NEC Corp
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Anelva Corp filed Critical NEC Corp
Publication of DE69129722D1 publication Critical patent/DE69129722D1/de
Application granted granted Critical
Publication of DE69129722T2 publication Critical patent/DE69129722T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69129722T 1990-09-21 1991-09-20 Verfahren für das selektive Wachstum einer Dünnschicht auf einem gemusterten Substrat Expired - Lifetime DE69129722T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25300490 1990-09-21

Publications (2)

Publication Number Publication Date
DE69129722D1 DE69129722D1 (de) 1998-08-13
DE69129722T2 true DE69129722T2 (de) 1999-05-06

Family

ID=17245153

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69129722T Expired - Lifetime DE69129722T2 (de) 1990-09-21 1991-09-20 Verfahren für das selektive Wachstum einer Dünnschicht auf einem gemusterten Substrat

Country Status (6)

Country Link
US (1) US5441012A (forum.php)
EP (1) EP0476684B1 (forum.php)
KR (1) KR100190953B1 (forum.php)
CA (1) CA2051529C (forum.php)
DE (1) DE69129722T2 (forum.php)
TW (1) TW205603B (forum.php)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6797558B2 (en) * 2001-04-24 2004-09-28 Micron Technology, Inc. Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer
US6159852A (en) 1998-02-13 2000-12-12 Micron Technology, Inc. Method of depositing polysilicon, method of fabricating a field effect transistor, method of forming a contact to a substrate, method of forming a capacitor
KR20020083767A (ko) * 2001-04-30 2002-11-04 주식회사 하이닉스반도체 선택적 에피택셜 성장 공정에서의 기판 세정 방법
US7085616B2 (en) * 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
CN119947134A (zh) * 2025-04-08 2025-05-06 中国科学院金属研究所 基于MSi2N4介导界面调控的半导体异质结及制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3717514A (en) * 1970-10-06 1973-02-20 Motorola Inc Single crystal silicon contact for integrated circuits and method for making same
DE2059116C3 (de) * 1970-12-01 1974-11-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines Halbleiterbauelementes
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices
US4462847A (en) * 1982-06-21 1984-07-31 Texas Instruments Incorporated Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure vapor deposition
JPH0782996B2 (ja) * 1986-03-28 1995-09-06 キヤノン株式会社 結晶の形成方法
JPH0639357B2 (ja) * 1986-09-08 1994-05-25 新技術開発事業団 元素半導体単結晶薄膜の成長方法
JP2647927B2 (ja) * 1988-10-17 1997-08-27 三洋電機株式会社 選択的エピタキシャル成長方法
US4910165A (en) * 1988-11-04 1990-03-20 Ncr Corporation Method for forming epitaxial silicon on insulator structures using oxidized porous silicon
US4963506A (en) * 1989-04-24 1990-10-16 Motorola Inc. Selective deposition of amorphous and polycrystalline silicon

Also Published As

Publication number Publication date
DE69129722D1 (de) 1998-08-13
CA2051529C (en) 1999-08-24
KR920006733A (ko) 1992-04-28
EP0476684B1 (en) 1998-07-08
CA2051529A1 (en) 1992-03-22
TW205603B (forum.php) 1993-05-11
KR100190953B1 (ko) 1999-06-15
EP0476684A2 (en) 1992-03-25
US5441012A (en) 1995-08-15
EP0476684A3 (en) 1992-12-09

Similar Documents

Publication Publication Date Title
DE69106091T2 (de) Verfahren zur Abscheidung eines dünnen Films.
DE3884682T2 (de) Verfahren zur Züchtung eines Halbleiterkristalles aus III-V-Gruppen-Verbindung auf einem Si-Substrat.
DE3727264C2 (forum.php)
DE68917504T2 (de) Verfahren zur Herstellung von abwechselnden Schichten aus monokristallinen Halbleitermaterial und Schichten aus isolierendem Material.
DE3526825C2 (forum.php)
DE60104426T2 (de) Verfahren zur dampfphasenabscheidung eines films auf einem substrat
DE3802732C2 (forum.php)
DE10136682B4 (de) Selektives Epitaxieverfahren für Halbleiterbauelemente
DE69325983T2 (de) Verfahren und Vorrichtung zur chemischen Dampfabscheidung
DE2110289C3 (de) Verfahren zum Niederschlagen von Halbleitermaterial und Vorrichtung zu seiner Durchführung
DE3507337C2 (forum.php)
DE10208450A1 (de) Vorrichtung und Verfahren zum Abscheiden dünner Schichten mittels ALD/CVD-Prozessen in Verbindung mit schnellen thermischen Prozessen
DE112011105102T5 (de) Verfahren und Vorrichtung zum selektiven Abscheiden von epitaxialen Germanium-Spannungsbeaufschlagungslegierungen
DE69919419T2 (de) Vorrichtung zur Abscheidung eines Filmes und Verfahren zur Herstellung eines kristallinen Filmes aus Silizium
DE69521786T2 (de) Verfahren und Vorrichtung zur plasma-unterstützten zeilenweisen Dampfabscheidung
DE60124452T2 (de) CVD Verfahren zum Herstellen von amorphem Silizium
WO2012143262A1 (de) Vorrichtung und verfahren zum grossflächigen abscheiden von halbleiterschichten mit gasgetrennter hcl-einspeisung
DE3852402T2 (de) Galliumnitridartige Halbleiterverbindung und daraus bestehende lichtemittierende Vorrichtung sowie Verfahren zu deren Herstellung.
DE3526824C2 (forum.php)
DE69229870T2 (de) Vorrichtung zum einführen von gas, sowie gerät und verfahren zum epitaxialen wachstum.
DE69129722T2 (de) Verfahren für das selektive Wachstum einer Dünnschicht auf einem gemusterten Substrat
DE3634140C2 (forum.php)
DE1901819B2 (de) Herstellungsverfahren für polykristalline Siliciumschichten
DE3751884T2 (de) Herstellungsverfahren einer niedergeschlagenen Kristallschicht
DE3526889A1 (de) Einrichtung zum bilden eines halbleiterkristalls

Legal Events

Date Code Title Description
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition