DE69128313T2 - Einschalt-Rücksetzimpulsgenerator - Google Patents

Einschalt-Rücksetzimpulsgenerator

Info

Publication number
DE69128313T2
DE69128313T2 DE69128313T DE69128313T DE69128313T2 DE 69128313 T2 DE69128313 T2 DE 69128313T2 DE 69128313 T DE69128313 T DE 69128313T DE 69128313 T DE69128313 T DE 69128313T DE 69128313 T2 DE69128313 T2 DE 69128313T2
Authority
DE
Germany
Prior art keywords
power
pulse generator
reset pulse
reset
generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69128313T
Other languages
English (en)
Other versions
DE69128313D1 (de
Inventor
Ching-Yuh Tsay
Donald J Redwine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69128313D1 publication Critical patent/DE69128313D1/de
Publication of DE69128313T2 publication Critical patent/DE69128313T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE69128313T 1990-07-31 1991-07-31 Einschalt-Rücksetzimpulsgenerator Expired - Fee Related DE69128313T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/561,536 US5159206A (en) 1990-07-31 1990-07-31 Power up reset circuit

Publications (2)

Publication Number Publication Date
DE69128313D1 DE69128313D1 (de) 1998-01-15
DE69128313T2 true DE69128313T2 (de) 1998-08-06

Family

ID=24242377

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128313T Expired - Fee Related DE69128313T2 (de) 1990-07-31 1991-07-31 Einschalt-Rücksetzimpulsgenerator

Country Status (3)

Country Link
US (1) US5159206A (de)
EP (1) EP0469588B1 (de)
DE (1) DE69128313T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216299A (en) * 1992-02-13 1993-06-01 Standard Microsystems Corporation Low power noise rejecting TTL to CMOS input buffer
JP3192751B2 (ja) * 1992-05-07 2001-07-30 株式会社東芝 半導体装置
US5323067A (en) * 1993-04-14 1994-06-21 National Semiconductor Corporation Self-disabling power-up detection circuit
US5495196A (en) * 1993-05-07 1996-02-27 Xilinx, Inc. User controlled reset circuit with fast recovery
US6204701B1 (en) 1994-05-31 2001-03-20 Texas Instruments Incorporated Power up detection circuit
US6060945A (en) * 1994-05-31 2000-05-09 Texas Instruments Incorporated Burn-in reference voltage generation
US6127881A (en) * 1994-05-31 2000-10-03 Texas Insruments Incorporated Multiplier circuit
US5497348A (en) * 1994-05-31 1996-03-05 Texas Instruments Incorporated Burn-in detection circuit
US5519346A (en) * 1994-06-22 1996-05-21 Motorola, Inc. Selective restart circuit for an electronic device
US5508649A (en) * 1994-07-21 1996-04-16 National Semiconductor Corporation Voltage level triggered ESD protection circuit
GB9423046D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A voltage reference circuit
US5502416A (en) * 1995-03-31 1996-03-26 Sgs-Thomson Microelectronics, Inc. Adjustable reset threshold for an integrated regulator
US5703512A (en) * 1995-06-06 1997-12-30 Sgs-Thomson Microelectronics, Inc. Method and apparatus for test mode entry during power up
US6388314B1 (en) * 1995-08-17 2002-05-14 Micron Technology, Inc. Single deposition layer metal dynamic random access memory
US5744990A (en) * 1995-11-08 1998-04-28 Standard Microsystems Corporation Enhanced power-on-reset/low voltage detection circuit
US5686847A (en) * 1996-03-15 1997-11-11 Rockwell International Corporation Reduced sensitivity power-on reset circuitry
US5903491A (en) 1997-06-09 1999-05-11 Micron Technology, Inc. Single deposition layer metal dynamic random access memory
US5923156A (en) * 1997-08-15 1999-07-13 Micron Technology, Inc. N-channel voltage regulator
JP2000112587A (ja) * 1998-09-09 2000-04-21 Texas Instr Inc <Ti> 電力を選択的に割当てるシステム
US6473852B1 (en) 1998-10-30 2002-10-29 Fairchild Semiconductor Corporation Method and circuit for performing automatic power on reset of an integrated circuit
DE10055242C1 (de) 2000-11-08 2002-02-21 Infineon Technologies Ag Schaltungsanordnung mit interner Versorgungsspannung
US6952122B2 (en) * 2001-09-28 2005-10-04 Intel Corporation Generating pulses for resetting integrated circuits
KR100422588B1 (ko) * 2002-05-20 2004-03-16 주식회사 하이닉스반도체 파워 업 신호 발생 장치
US6992534B2 (en) * 2003-10-14 2006-01-31 Micron Technology, Inc. Circuits and methods of temperature compensation for refresh oscillator
US6998884B2 (en) * 2003-12-31 2006-02-14 Atmel Corporation Circuit for auto-clamping input pins to a definite voltage during power-up or reset
TWI462496B (zh) * 2007-10-03 2014-11-21 Airoha Tech Corp The biasing circuit of the wireless transceiver
CN106888012B (zh) * 2017-01-09 2023-06-16 四川埃姆克伺服科技有限公司 一种用于伺服控制器的差分型模拟量输入接口电路
TWI660551B (zh) * 2018-07-20 2019-05-21 華邦電子股份有限公司 電壓開啟重置信號產生裝置及其電壓偵測電路

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4140930A (en) * 1976-07-30 1979-02-20 Sharp Kabushiki Kaisha Voltage detection circuit composed of at least two MOS transistors
DE3274039D1 (en) * 1981-02-25 1986-12-04 Toshiba Kk Complementary mosfet logic circuit
JPS60223321A (ja) * 1984-04-20 1985-11-07 Toshiba Corp タイマ回路
US4584492A (en) * 1984-08-06 1986-04-22 Intel Corporation Temperature and process stable MOS input buffer
IT1215463B (it) * 1987-05-07 1990-02-14 Sgs Microelettronica Spa Generatore di impulsi di riposizionamento in coincidenza colla salita dell'alimentazione, per circuiti integrati di tipo cmos.
JP2772522B2 (ja) * 1987-11-06 1998-07-02 日本電気アイシーマイコンシステム 株式会社 パワーオン信号発生回路
US4812679A (en) * 1987-11-09 1989-03-14 Motorola, Inc. Power-on reset circuit
JP2541585B2 (ja) * 1987-11-18 1996-10-09 富士通株式会社 リセット信号発生回路
JP2777136B2 (ja) * 1988-03-08 1998-07-16 株式会社東芝 半導体集積回路の誤動作防止回路
JPH0724298B2 (ja) * 1988-08-10 1995-03-15 日本電気株式会社 半導体記憶装置
US4885476A (en) * 1989-03-06 1989-12-05 Motorola, Inc. Power-on reset circuit
US4970408A (en) * 1989-10-30 1990-11-13 Motorola, Inc. CMOS power-on reset circuit

Also Published As

Publication number Publication date
DE69128313D1 (de) 1998-01-15
EP0469588B1 (de) 1997-12-03
US5159206A (en) 1992-10-27
EP0469588A2 (de) 1992-02-05
EP0469588A3 (en) 1993-04-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee