DE69127622T2 - Tantal- oder niob-basislegierungen - Google Patents
Tantal- oder niob-basislegierungenInfo
- Publication number
- DE69127622T2 DE69127622T2 DE69127622T DE69127622T DE69127622T2 DE 69127622 T2 DE69127622 T2 DE 69127622T2 DE 69127622 T DE69127622 T DE 69127622T DE 69127622 T DE69127622 T DE 69127622T DE 69127622 T2 DE69127622 T2 DE 69127622T2
- Authority
- DE
- Germany
- Prior art keywords
- ppm
- tantalum
- silicon
- wire
- molybdenum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 59
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 title claims abstract description 8
- 229910045601 alloy Inorganic materials 0.000 title claims description 21
- 239000000956 alloy Substances 0.000 title claims description 21
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 16
- 239000011733 molybdenum Substances 0.000 claims abstract description 16
- 239000010955 niobium Substances 0.000 claims abstract description 7
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 6
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 5
- 239000010953 base metal Substances 0.000 claims abstract description 3
- 239000000047 product Substances 0.000 claims description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 6
- 239000002244 precipitate Substances 0.000 claims description 5
- 238000002524 electron diffraction data Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 229910001257 Nb alloy Inorganic materials 0.000 claims 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 239000002019 doping agent Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 9
- 229910001362 Ta alloys Inorganic materials 0.000 description 7
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 7
- 229910021343 molybdenum disilicide Inorganic materials 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000002270 dispersing agent Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 3
- 229910020968 MoSi2 Inorganic materials 0.000 description 3
- 229910052776 Thorium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000003575 carbonaceous material Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 238000009707 resistance sintering Methods 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 3
- 229910003452 thorium oxide Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VGBPIHVLVSGJGR-UHFFFAOYSA-N thorium(4+);tetranitrate Chemical compound [Th+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VGBPIHVLVSGJGR-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- -1 rare earth oxides Chemical class 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
- C22C32/0078—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only silicides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Catalysts (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53409290A | 1990-06-06 | 1990-06-06 | |
PCT/US1991/003995 WO1991019015A1 (fr) | 1990-06-06 | 1991-06-06 | Alliages a base de tantale ou de niobium |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69127622D1 DE69127622D1 (de) | 1997-10-16 |
DE69127622T2 true DE69127622T2 (de) | 1998-02-12 |
Family
ID=24128673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69127622T Expired - Fee Related DE69127622T2 (de) | 1990-06-06 | 1991-06-06 | Tantal- oder niob-basislegierungen |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP0532658B1 (fr) |
JP (1) | JP2944211B2 (fr) |
KR (1) | KR0145741B1 (fr) |
AT (1) | ATE158026T1 (fr) |
AU (1) | AU8077491A (fr) |
DE (1) | DE69127622T2 (fr) |
HK (1) | HK1003139A1 (fr) |
WO (1) | WO1991019015A1 (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1075884A3 (fr) * | 1996-11-07 | 2005-10-05 | Cabot Corporation | Poudres de niobium et condensateurs électrolytiques au niobium |
US6576069B1 (en) * | 1998-05-22 | 2003-06-10 | Cabot Corporation | Tantalum-silicon alloys and products containing the same and processes of making the same |
JP2003213301A (ja) * | 2002-01-21 | 2003-07-30 | Kawatetsu Mining Co Ltd | ニオブ粉末及び固体電解コンデンサ |
JP2004035989A (ja) * | 2002-07-08 | 2004-02-05 | Kawatetsu Mining Co Ltd | ニオブ粉末、固体電解コンデンサ用アノード及び固体電解コンデンサ |
JP2004076063A (ja) * | 2002-08-13 | 2004-03-11 | Kawatetsu Mining Co Ltd | ニオブ合金粉末、固体電解コンデンサ用アノード及び固体電解コンデンサ |
JP2005064038A (ja) * | 2003-08-12 | 2005-03-10 | Cabot Supermetal Kk | 電解コンデンサ用陽極導線 |
US20060269436A1 (en) * | 2005-05-31 | 2006-11-30 | Cabot Corporation | Process for heat treating metal powder and products made from the same |
MX2009011368A (es) | 2007-04-27 | 2009-11-09 | Starck H C Inc | Aleacion a base de tantalio resistente a corrosion acuosa. |
US20110008201A1 (en) * | 2009-07-07 | 2011-01-13 | H.C. Starck Inc. | Niobium based alloy that is resistant to aqueous corrosion |
US11198927B1 (en) | 2019-09-26 | 2021-12-14 | United States Of America As Represented By The Secretary Of The Air Force | Niobium alloys for high temperature, structural applications |
US11846008B1 (en) | 2019-09-26 | 2023-12-19 | United States Of America As Represented By Secretary Of The Air Force | Niobium alloys for high temperature, structural applications |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4062679A (en) * | 1973-03-29 | 1977-12-13 | Fansteel Inc. | Embrittlement-resistant tantalum wire |
US4235629A (en) * | 1977-10-17 | 1980-11-25 | Fansteel Inc. | Method for producing an embrittlement-resistant tantalum wire |
US4859257A (en) * | 1986-01-29 | 1989-08-22 | Fansteel Inc. | Fine grained embrittlement resistant tantalum wire |
US4957541A (en) * | 1988-11-01 | 1990-09-18 | Nrc, Inc. | Capacitor grade tantalum powder |
-
1991
- 1991-06-06 KR KR1019920703111A patent/KR0145741B1/ko not_active IP Right Cessation
- 1991-06-06 AU AU80774/91A patent/AU8077491A/en not_active Abandoned
- 1991-06-06 WO PCT/US1991/003995 patent/WO1991019015A1/fr active IP Right Grant
- 1991-06-06 DE DE69127622T patent/DE69127622T2/de not_active Expired - Fee Related
- 1991-06-06 JP JP3511244A patent/JP2944211B2/ja not_active Expired - Lifetime
- 1991-06-06 EP EP91911943A patent/EP0532658B1/fr not_active Expired - Lifetime
- 1991-06-06 AT AT91911943T patent/ATE158026T1/de not_active IP Right Cessation
-
1998
- 1998-03-10 HK HK98101978A patent/HK1003139A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
ATE158026T1 (de) | 1997-09-15 |
DE69127622D1 (de) | 1997-10-16 |
JPH06501054A (ja) | 1994-01-27 |
AU8077491A (en) | 1991-12-31 |
EP0532658B1 (fr) | 1997-09-10 |
HK1003139A1 (en) | 1998-10-09 |
JP2944211B2 (ja) | 1999-08-30 |
WO1991019015A1 (fr) | 1991-12-12 |
EP0532658A1 (fr) | 1993-03-24 |
EP0532658A4 (fr) | 1994-04-13 |
KR0145741B1 (ko) | 1998-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |