DE69125554D1 - Verfahren zur Herstellung einer Solarzelle aus amorphem Silizium - Google Patents

Verfahren zur Herstellung einer Solarzelle aus amorphem Silizium

Info

Publication number
DE69125554D1
DE69125554D1 DE69125554T DE69125554T DE69125554D1 DE 69125554 D1 DE69125554 D1 DE 69125554D1 DE 69125554 T DE69125554 T DE 69125554T DE 69125554 T DE69125554 T DE 69125554T DE 69125554 D1 DE69125554 D1 DE 69125554D1
Authority
DE
Germany
Prior art keywords
producing
solar cell
amorphous silicon
silicon solar
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69125554T
Other languages
English (en)
Other versions
DE69125554T2 (de
Inventor
Kenji Miyachi
Masato Koyama
Yoshinori Ashida
Nobuhiro Fukuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2234393A external-priority patent/JP2966909B2/ja
Priority claimed from JP2234391A external-priority patent/JP2966908B2/ja
Priority claimed from JP2234392A external-priority patent/JPH04115579A/ja
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Publication of DE69125554D1 publication Critical patent/DE69125554D1/de
Application granted granted Critical
Publication of DE69125554T2 publication Critical patent/DE69125554T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
DE69125554T 1990-09-06 1991-09-04 Verfahren zur Herstellung einer Solarzelle aus amorphem Silizium Expired - Fee Related DE69125554T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2234393A JP2966909B2 (ja) 1990-09-06 1990-09-06 非晶質半導体薄膜
JP2234391A JP2966908B2 (ja) 1990-09-06 1990-09-06 光電変換素子
JP2234392A JPH04115579A (ja) 1990-09-06 1990-09-06 非晶質太陽電池

Publications (2)

Publication Number Publication Date
DE69125554D1 true DE69125554D1 (de) 1997-05-15
DE69125554T2 DE69125554T2 (de) 1997-07-17

Family

ID=27332132

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125554T Expired - Fee Related DE69125554T2 (de) 1990-09-06 1991-09-04 Verfahren zur Herstellung einer Solarzelle aus amorphem Silizium

Country Status (4)

Country Link
US (1) US5248348A (de)
EP (1) EP0475666B1 (de)
AU (1) AU632241B2 (de)
DE (1) DE69125554T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5419783A (en) * 1992-03-26 1995-05-30 Sanyo Electric Co., Ltd. Photovoltaic device and manufacturing method therefor
US5476798A (en) * 1992-06-29 1995-12-19 United Solar Systems Corporation Plasma deposition process with substrate temperature control
DE69331522T2 (de) * 1992-06-29 2002-08-29 United Solar Systems Corp Mikrowellengespeistes abscheideverfahren mit regelung der substrattemperatur.
EP0609104B1 (de) * 1993-01-29 1998-05-20 Canon Kabushiki Kaisha Verfahren zur Herstellung funktioneller niedergeschlagener Schichten
JPH06326024A (ja) * 1993-05-10 1994-11-25 Canon Inc 半導体基板の製造方法及び非晶質堆積膜の形成方法
CN1135635C (zh) * 1994-03-25 2004-01-21 阿莫科/恩龙太阳公司 增强光电器件和电子器件的光和电特性的等离子淀积工艺
US5635408A (en) * 1994-04-28 1997-06-03 Canon Kabushiki Kaisha Method of producing a semiconductor device
US5518935A (en) * 1994-06-17 1996-05-21 At&T Corp. Hydrogenation of photoresponsive semiconductor devices
US6489219B1 (en) 1995-11-09 2002-12-03 Micron Technology, Inc. Method of alloying a semiconductor device
US20020031920A1 (en) 1996-01-16 2002-03-14 Lyding Joseph W. Deuterium treatment of semiconductor devices
US5872387A (en) * 1996-01-16 1999-02-16 The Board Of Trustees Of The University Of Illinois Deuterium-treated semiconductor devices
US6077791A (en) * 1996-12-16 2000-06-20 Motorola Inc. Method of forming passivation layers using deuterium containing reaction gases
US5982020A (en) 1997-04-28 1999-11-09 Lucent Technologies Inc. Deuterated bipolar transistor and method of manufacture thereof
US6071751A (en) * 1997-04-28 2000-06-06 Texas Instruments Incorporated Deuterium sintering with rapid quenching
US6023093A (en) * 1997-04-28 2000-02-08 Lucent Technologies Inc. Deuterated direlectric and polysilicon film-based semiconductor devices and method of manufacture thereof
US6252270B1 (en) 1997-04-28 2001-06-26 Agere Systems Guardian Corp. Increased cycle specification for floating-gate and method of manufacture thereof
US6365511B1 (en) 1999-06-03 2002-04-02 Agere Systems Guardian Corp. Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability
US6468829B2 (en) * 2000-05-16 2002-10-22 United Solar Systems Corporation Method for manufacturing high efficiency photovoltaic devices at enhanced depositions rates
US6576522B2 (en) 2000-12-08 2003-06-10 Agere Systems Inc. Methods for deuterium sintering
US6605529B2 (en) 2001-05-11 2003-08-12 Agere Systems Inc. Method of creating hydrogen isotope reservoirs in a semiconductor device
KR101015161B1 (ko) * 2002-10-25 2011-02-16 외를리콘 솔라 아게, 트뤼프바흐 반도체 장치들의 제조방법 및 그 방법으로 얻어진 반도체장치들
US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
WO2008128211A1 (en) * 2007-04-13 2008-10-23 Ziawatt Solar, Llc Layers that impede diffusion of metals in group vi element-containing materials
WO2010027606A2 (en) * 2008-08-23 2010-03-11 The Regents Of The University Of California Improved amorphous silicon solar cells
CN102460720B (zh) * 2009-05-28 2014-10-29 东洋钢钣株式会社 化合物半导体型太阳能电池用基板
US8778448B2 (en) 2011-07-21 2014-07-15 International Business Machines Corporation Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
EP2740815B1 (de) * 2011-08-02 2016-04-13 Shincron Co., Ltd. Verfahren zur bildung einer siliziumkarbid-dünnschicht
JP6306411B2 (ja) * 2014-04-17 2018-04-04 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
CN115985803B (zh) * 2023-03-22 2023-07-04 广东联塑班皓新能源科技集团有限公司 一种光伏组件生产系统

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
JPS59107574A (ja) * 1982-12-13 1984-06-21 Agency Of Ind Science & Technol アモルフアスシリコン太陽電池の製造方法
US4471155A (en) * 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage
JPS62177983A (ja) * 1986-01-31 1987-08-04 Mitsui Toatsu Chem Inc 光電変換素子の製造法
US4690830A (en) * 1986-02-18 1987-09-01 Solarex Corporation Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US4799968A (en) * 1986-09-26 1989-01-24 Sanyo Electric Co., Ltd. Photovoltaic device
JPH06105691B2 (ja) * 1988-09-29 1994-12-21 株式会社富士電機総合研究所 炭素添加非晶質シリコン薄膜の製造方法
JP2846651B2 (ja) * 1989-03-31 1999-01-13 三洋電機株式会社 光起電力装置

Also Published As

Publication number Publication date
EP0475666A2 (de) 1992-03-18
AU632241B2 (en) 1992-12-17
AU8354691A (en) 1992-03-12
US5248348A (en) 1993-09-28
EP0475666A3 (en) 1992-08-05
EP0475666B1 (de) 1997-04-09
DE69125554T2 (de) 1997-07-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MITSUI CHEMICALS, INC., TOKIO/TOKYO, JP

8339 Ceased/non-payment of the annual fee