DE69123228T2 - Verfahren zur Herstellung einer chemisch adsorbierten Schicht - Google Patents
Verfahren zur Herstellung einer chemisch adsorbierten SchichtInfo
- Publication number
- DE69123228T2 DE69123228T2 DE69123228T DE69123228T DE69123228T2 DE 69123228 T2 DE69123228 T2 DE 69123228T2 DE 69123228 T DE69123228 T DE 69123228T DE 69123228 T DE69123228 T DE 69123228T DE 69123228 T2 DE69123228 T2 DE 69123228T2
- Authority
- DE
- Germany
- Prior art keywords
- producing
- adsorbed layer
- chemically adsorbed
- chemically
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
- B05D1/185—Processes for applying liquids or other fluent materials performed by dipping applying monomolecular layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/46—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with organic materials
- C04B41/49—Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes
- C04B41/4905—Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes containing silicon
- C04B41/4922—Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes containing silicon applied to the substrate as monomers, i.e. as organosilanes RnSiX4-n, e.g. alkyltrialkoxysilane, dialkyldialkoxysilane
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/82—Coating or impregnation with organic materials
- C04B41/84—Compounds having one or more carbon-to-metal of carbon-to-silicon linkages
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02334—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Composite Materials (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP40486090 | 1990-12-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69123228D1 DE69123228D1 (de) | 1997-01-02 |
DE69123228T2 true DE69123228T2 (de) | 1997-03-13 |
Family
ID=18514515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69123228T Expired - Lifetime DE69123228T2 (de) | 1990-12-21 | 1991-12-18 | Verfahren zur Herstellung einer chemisch adsorbierten Schicht |
Country Status (3)
Country | Link |
---|---|
US (1) | US5143750A (de) |
EP (1) | EP0492417B1 (de) |
DE (1) | DE69123228T2 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2637869B2 (ja) * | 1990-12-10 | 1997-08-06 | 松下電器産業株式会社 | 吸着単分子膜及びその製造方法 |
DE69232591T2 (de) * | 1991-01-23 | 2002-08-22 | Matsushita Electric Ind Co Ltd | Wasser- und Ölabweisende adsorbierte Folie |
EP0497204B1 (de) * | 1991-01-28 | 2001-04-18 | Matsushita Electric Industrial Co., Ltd. | Medizinischer Artikel und Verfahren zu seiner Herstellung |
CA2060294C (en) * | 1991-02-06 | 2000-01-18 | Kazufumi Ogawa | Chemically absorbed film and method of manufacturing the same |
DE69206838T2 (de) * | 1991-02-19 | 1996-05-23 | Matsushita Electric Ind Co Ltd | Verfahren zur Herstellung eines chemisch absorbierten Films |
DE69211181T2 (de) * | 1991-02-27 | 1996-10-10 | Matsushita Electric Ind Co Ltd | Selbstschmierende Vorrichtung |
DE69329536T2 (de) | 1992-03-02 | 2001-06-07 | Matsushita Electric Ind Co Ltd | Chemisch adsorbierter Film und Verfahren zur Herstellung desselben |
JP2774743B2 (ja) * | 1992-09-14 | 1998-07-09 | 松下電器産業株式会社 | 撥水部材及びその製造方法 |
SE502729C2 (sv) * | 1994-03-21 | 1995-12-18 | Jan Karlsson | Isolerruta sammansatt av två eller flera glas |
US6090447A (en) * | 1996-08-09 | 2000-07-18 | Asahi Glass Company, Ltd. | Process for forming a water-repellent thin film |
WO1999002463A1 (de) * | 1997-07-05 | 1999-01-21 | Miele & Cie. Gmbh & Co. | Temperaturbeständige und kratzfeste antihaftbeschichtung |
US5891507A (en) * | 1997-07-28 | 1999-04-06 | Iowa-India Investments Company Limited | Process for coating a surface of a metallic stent |
DE19733731A1 (de) | 1997-08-04 | 1999-02-25 | Siemens Ag | Integrierte elektrische Schaltung mit Passivierungsschicht |
JP3329441B2 (ja) * | 1998-10-09 | 2002-09-30 | ティーディーケイ株式会社 | 薄膜形成のための前処理方法 |
FR2787350B1 (fr) | 1998-12-21 | 2002-01-04 | Saint Gobain Vitrage | Vitrage a revetement mesoporeux fonctionnel, notamment hydrophobe |
AU1583601A (en) * | 1999-11-05 | 2001-06-06 | Bausch & Lomb Incorporated | Surface treatment of non-plasma treated silicone hydrogel contact lenses |
WO2001034311A1 (en) * | 1999-11-05 | 2001-05-17 | Bausch & Lomb Incorporated | Surface treatment of rigid gas permeable contact lenses |
US6686522B2 (en) | 2000-06-22 | 2004-02-03 | Shinko Corporation | Musical instrument with a body made of polyurethane foam |
US6852266B2 (en) * | 2001-01-19 | 2005-02-08 | Korry Electronics Co. | Ultrasonic assisted deposition of anti-stick films on metal oxides |
US6783719B2 (en) | 2001-01-19 | 2004-08-31 | Korry Electronics, Co. | Mold with metal oxide surface compatible with ionic release agents |
US20060174753A1 (en) * | 2001-02-15 | 2006-08-10 | Thomas Aisenbrey | Musical instruments and components manufactured from conductively doped resin-based materials |
EP1396479A1 (de) * | 2002-09-03 | 2004-03-10 | The Procter & Gamble Company | Flüssigkeitsspender mit Antibeschlagspiegel |
EP1396478A1 (de) * | 2002-09-03 | 2004-03-10 | The Procter & Gamble Company | Flüssigkeitsspender mit Antibeschlagspiegel |
GB2413337A (en) * | 2004-04-21 | 2005-10-26 | Hydrogen Solar Ltd | Electrodes with tungsten oxide films |
US20070175502A1 (en) * | 2004-07-30 | 2007-08-02 | I.P. Foundry, Inc. | Apparatus and method for delivering acoustic energy through a liquid stream to a target object for disruptive surface cleaning or treating effects |
US20060021642A1 (en) * | 2004-07-30 | 2006-02-02 | Sliwa John W Jr | Apparatus and method for delivering acoustic energy through a liquid stream to a target object for disruptive surface cleaning or treating effects |
US7147634B2 (en) | 2005-05-12 | 2006-12-12 | Orion Industries, Ltd. | Electrosurgical electrode and method of manufacturing same |
US8814861B2 (en) | 2005-05-12 | 2014-08-26 | Innovatech, Llc | Electrosurgical electrode and method of manufacturing same |
US9520563B2 (en) * | 2007-11-21 | 2016-12-13 | The Board Of Trustees Of The Leland Stanford Junior University | Patterning of organic semiconductor materials |
EP2285500A2 (de) | 2008-05-09 | 2011-02-23 | AMF GmbH | Selbstorganisierte monmolekulare schichten und herstellungsverfahren |
DE102008044485A1 (de) * | 2008-08-28 | 2010-04-01 | Schott Solar Ag | Verfahren und Anordnung zum Herstellen einer Funktionsschicht auf einem Halbleiterbauelement |
US7984567B2 (en) * | 2008-10-07 | 2011-07-26 | Christ Bill Bertakis | Apparatus for cleaning simulated hair articles |
FR2940966B1 (fr) | 2009-01-09 | 2011-03-04 | Saint Gobain | Substrat hydrophobe comprenant un primage du type oxycarbure de silicium active par plasma |
FR2953823B1 (fr) | 2009-12-10 | 2011-12-02 | Saint Gobain | Substrat hydrophobe comprenant un double primage |
FR2982609B1 (fr) | 2011-11-16 | 2014-06-20 | Saint Gobain | Vitrage hydrophobe |
EP3055371B1 (de) | 2013-10-04 | 2018-01-10 | Luna Innovations Incorporated | Transparente wasserabweisende beschichtungsmaterialien mit verbesserter beständigkeit und verfahren zur herstellung davon |
US9982156B1 (en) * | 2014-04-17 | 2018-05-29 | Lockheed Martin Corporation | Transmissive surfaces and polymeric coatings therefore, for fortification of visible, infrared, and laser optical devices |
KR20180137039A (ko) | 2014-09-05 | 2018-12-26 | 닛뽕소다 가부시키가이샤 | 낚시 바늘 |
DE102016124056A1 (de) | 2016-12-12 | 2018-06-14 | Miele & Cie. Kg | Dichtung für ein Gargerät |
ES2682687B1 (es) * | 2017-03-21 | 2019-08-12 | Bsh Electrodomesticos Espana Sa | Método para recubrir un elemento base para un componente de aparato doméstico, y componente de aparato doméstico |
FR3093013B1 (fr) | 2019-02-27 | 2021-12-31 | Saint Gobain | Composition sol-gel durcissable sous l’effet d’un rayonnement UV pour l’obtention d’un revêtement hydrophobe |
CN114056933B (zh) * | 2021-12-17 | 2023-10-20 | 广东海拓创新精密设备科技有限公司 | 一种高分子量改性硅化聚氨酯橡胶物理粘附吸盘 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4539061A (en) * | 1983-09-07 | 1985-09-03 | Yeda Research And Development Co., Ltd. | Process for the production of built-up films by the stepwise adsorption of individual monolayers |
JPS6116910A (ja) * | 1984-07-03 | 1986-01-24 | Hitachi Cable Ltd | 放射線照射架橋可能なふつ素樹脂組成物 |
JPS61237636A (ja) * | 1985-04-15 | 1986-10-22 | 大同鋼板株式会社 | 塗装鋼板 |
JPS62269117A (ja) * | 1986-05-16 | 1987-11-21 | Stanley Electric Co Ltd | 液晶表示素子の垂直配向処理方法 |
JPS63220420A (ja) * | 1987-03-09 | 1988-09-13 | Matsushita Electric Ind Co Ltd | 記録媒体およびその製造方法 |
JPH0761428B2 (ja) * | 1989-03-09 | 1995-07-05 | 松下電器産業株式会社 | 選択透過性膜およびその製造方法 |
US5039555A (en) * | 1988-10-12 | 1991-08-13 | Matsushita Electric Industrial Co., Ltd. | Method of preparing lubricant for recording media |
-
1991
- 1991-12-18 DE DE69123228T patent/DE69123228T2/de not_active Expired - Lifetime
- 1991-12-18 EP EP91121741A patent/EP0492417B1/de not_active Expired - Lifetime
- 1991-12-19 US US07/810,114 patent/US5143750A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0492417B1 (de) | 1996-11-20 |
EP0492417A3 (en) | 1993-12-15 |
DE69123228D1 (de) | 1997-01-02 |
EP0492417A2 (de) | 1992-07-01 |
US5143750A (en) | 1992-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69123228T2 (de) | Verfahren zur Herstellung einer chemisch adsorbierten Schicht | |
DE69621723D1 (de) | Verfahren zur Herstellung einer Schicht | |
DE69127792T2 (de) | Verfahren zur Herstellung eines Musters in einer Schicht | |
DE69126949T2 (de) | Verfahren zur Herstellung einer einkristallinen Schicht | |
DE59409157D1 (de) | Verfahren zur Herstellung einer Schicht mit reduzierten mechanischen Spannungen | |
DE69210146D1 (de) | Verfahren zur Herstellung einer porenfreien, harten Schicht | |
DE68905556T2 (de) | Verfahren zur herstellung einer transparenten schicht. | |
DE69326706D1 (de) | Verfahren zur Herstellung einer Schicht auf einem Halbleiterkörper | |
DE69125789T2 (de) | Verfahren zur herstellung einer polyoxyalkylenverbindungen | |
DE69127237T2 (de) | Verfahren zur Herstellung einer Stoffverbindung | |
DE59205665D1 (de) | Verfahren zur Herstellung einer Grabenstruktur in einem Substrat | |
DE69116399T2 (de) | Verfahren zur Herstellung einer Schicht aus supraleitendem Oxyd | |
DE69118676T2 (de) | Verfahren zur herstellung einer dünnen schicht aus hochtemperatur-supraleiteroxyd | |
DE59703321D1 (de) | Verfahren zur Herstellung einer Beschichtung | |
DE69027850T2 (de) | Verfahren zur herstellung einer kohlenstoffschicht | |
DE59700065D1 (de) | Verfahren zur Herstellung einer photochromen Schicht | |
DE69031222D1 (de) | Verfahren zur herstellung einer 3-substituierten thio-3-cephemverbindung | |
DE59309045D1 (de) | Verfahren zur herstellung einer halbleiterstruktur | |
DE69210429D1 (de) | Verfahren zur Herstellung einer magnetischen Überzugsschicht | |
DE19880252D2 (de) | Verfahren zur Herstellung einer strukturierten Schicht | |
DE69323859D1 (de) | Verfahren zur Herstellung einer isolierten Schicht | |
DE69023718D1 (de) | Verfahren zur Herstellung einer Verbindungshalbleiterschicht. | |
ATA63090A (de) | Verfahren zur herstellung einer dichtungsschicht | |
DE69513942T2 (de) | Verfahren zur Herstellung einer metallhaltigen Keramikbeschichtung | |
DE69032290T2 (de) | Verfahren zur Herstellung einer amorphen Halbleiterschicht |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |