DE69123074D1 - Elektrisch programmierbares Antischmelzsicherungselement und Verfahren zu seiner Herstellung - Google Patents

Elektrisch programmierbares Antischmelzsicherungselement und Verfahren zu seiner Herstellung

Info

Publication number
DE69123074D1
DE69123074D1 DE69123074T DE69123074T DE69123074D1 DE 69123074 D1 DE69123074 D1 DE 69123074D1 DE 69123074 T DE69123074 T DE 69123074T DE 69123074 T DE69123074 T DE 69123074T DE 69123074 D1 DE69123074 D1 DE 69123074D1
Authority
DE
Germany
Prior art keywords
amorphous silicon
layer
tungsten
electrically programmable
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69123074T
Other languages
English (en)
Other versions
DE69123074T2 (de
Inventor
John L Mccollum
Shih-Ou Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsemi SoC Corp
Original Assignee
Actel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Actel Corp filed Critical Actel Corp
Application granted granted Critical
Publication of DE69123074D1 publication Critical patent/DE69123074D1/de
Publication of DE69123074T2 publication Critical patent/DE69123074T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69123074T 1990-04-12 1991-04-09 Elektrisch programmierbares Antischmelzsicherungselement und Verfahren zu seiner Herstellung Expired - Fee Related DE69123074T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/508,306 US5070384A (en) 1990-04-12 1990-04-12 Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer

Publications (2)

Publication Number Publication Date
DE69123074D1 true DE69123074D1 (de) 1996-12-19
DE69123074T2 DE69123074T2 (de) 1997-03-06

Family

ID=24022211

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69123074T Expired - Fee Related DE69123074T2 (de) 1990-04-12 1991-04-09 Elektrisch programmierbares Antischmelzsicherungselement und Verfahren zu seiner Herstellung

Country Status (5)

Country Link
US (1) US5070384A (de)
EP (1) EP0452091B1 (de)
JP (1) JP3095811B2 (de)
AT (1) ATE145301T1 (de)
DE (1) DE69123074T2 (de)

Families Citing this family (152)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451887A (en) * 1986-09-19 1995-09-19 Actel Corporation Programmable logic module and architecture for field programmable gate array device
US5477165A (en) * 1986-09-19 1995-12-19 Actel Corporation Programmable logic module and architecture for field programmable gate array device
US5502315A (en) * 1989-09-07 1996-03-26 Quicklogic Corporation Electrically programmable interconnect structure having a PECVD amorphous silicon element
US5989943A (en) * 1989-09-07 1999-11-23 Quicklogic Corporation Method for fabrication of programmable interconnect structure
US5181096A (en) * 1990-04-12 1993-01-19 Actel Corporation Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayer
US5780323A (en) * 1990-04-12 1998-07-14 Actel Corporation Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
US5272101A (en) * 1990-04-12 1993-12-21 Actel Corporation Electrically programmable antifuse and fabrication processes
US5381035A (en) * 1992-09-23 1995-01-10 Chen; Wenn-Jei Metal-to-metal antifuse including etch stop layer
US5614756A (en) * 1990-04-12 1997-03-25 Actel Corporation Metal-to-metal antifuse with conductive
US5552627A (en) * 1990-04-12 1996-09-03 Actel Corporation Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers
US5404029A (en) * 1990-04-12 1995-04-04 Actel Corporation Electrically programmable antifuse element
US5541441A (en) * 1994-10-06 1996-07-30 Actel Corporation Metal to metal antifuse
US5543656A (en) * 1990-04-12 1996-08-06 Actel Corporation Metal to metal antifuse
US5311039A (en) * 1990-04-24 1994-05-10 Seiko Epson Corporation PROM and ROM memory cells
JPH06505368A (ja) * 1991-01-17 1994-06-16 クロスポイント・ソルーションズ・インコーポレイテッド フィールドプログラム可能なゲートアレイに使用するための改良されたアンチヒューズ回路構造およびその製造方法
US6171512B1 (en) 1991-02-15 2001-01-09 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
US5322812A (en) * 1991-03-20 1994-06-21 Crosspoint Solutions, Inc. Improved method of fabricating antifuses in an integrated circuit device and resulting structure
EP0509631A1 (de) * 1991-04-18 1992-10-21 Actel Corporation Antischmelzsicherungen mit minimalischen Oberflächen
US5120679A (en) * 1991-06-04 1992-06-09 Vlsi Technology, Inc. Anti-fuse structures and methods for making same
US5290734A (en) * 1991-06-04 1994-03-01 Vlsi Technology, Inc. Method for making anti-fuse structures
US5242851A (en) * 1991-07-16 1993-09-07 Samsung Semiconductor, Inc. Programmable interconnect device and method of manufacturing same
US5641703A (en) * 1991-07-25 1997-06-24 Massachusetts Institute Of Technology Voltage programmable links for integrated circuits
US5258643A (en) * 1991-07-25 1993-11-02 Massachusetts Institute Of Technology Electrically programmable link structures and methods of making same
US5327024A (en) * 1992-07-02 1994-07-05 Quicklogic Corporation Field programmable antifuse device and programming method therefor
US5544070A (en) * 1991-07-31 1996-08-06 Quicklogic Corporation Programmed programmable device and method for programming antifuses of a programmable device
US5302546A (en) * 1991-07-31 1994-04-12 Quicklogic Corporation Programming of antifuses
US5243226A (en) * 1991-07-31 1993-09-07 Quicklogic Corporation Programming of antifuses
WO1993004499A1 (en) * 1991-08-19 1993-03-04 Crosspoint Solutions, Inc. An improved antifuse and method of manufacture thereof
WO1993005514A1 (en) * 1991-09-04 1993-03-18 Vlsi Technology, Inc. Anti-fuse structures and methods for making same
US5110754A (en) * 1991-10-04 1992-05-05 Micron Technology, Inc. Method of making a DRAM capacitor for use as an programmable antifuse for redundancy repair/options on a DRAM
US5451811A (en) * 1991-10-08 1995-09-19 Aptix Corporation Electrically programmable interconnect element for integrated circuits
EP0539197A1 (de) * 1991-10-23 1993-04-28 Fujitsu Limited Halbleiteranordnung mit einem Anti-Zylinder und Herstellungsverfahren
US5321322A (en) * 1991-11-27 1994-06-14 Aptix Corporation Programmable interconnect architecture without active devices
EP0558176A1 (de) * 1992-02-26 1993-09-01 Actel Corporation Metall-Metall-Antischmelzsicherung mit verbesserter Diffusionsbarriere-Schicht
US5298784A (en) * 1992-03-27 1994-03-29 International Business Machines Corporation Electrically programmable antifuse using metal penetration of a junction
EP0564138A1 (de) * 1992-03-31 1993-10-06 STMicroelectronics, Inc. Feldprogrammierbare Vorrichtung
US5329153A (en) * 1992-04-10 1994-07-12 Crosspoint Solutions, Inc. Antifuse with nonstoichiometric tin layer and method of manufacture thereof
US5475253A (en) * 1992-08-21 1995-12-12 Xilinx, Inc. Antifuse structure with increased breakdown at edges
EP0656151A1 (de) * 1992-08-21 1995-06-07 Xilinx, Inc. Antisicherung und verfahren zu ihrer bildung
US5293133A (en) * 1992-08-27 1994-03-08 Quicklogic Corporation Method of determining an electrical characteristic of an antifuse and apparatus therefor
WO1994007266A1 (en) * 1992-09-23 1994-03-31 Massachusetts Institute Of Technology A voltage programmable link having reduced capacitance
EP0592078A1 (de) * 1992-09-23 1994-04-13 Actel Corporation Antisicherung und Verfahren zu ihrer Herstellung
US5308795A (en) * 1992-11-04 1994-05-03 Actel Corporation Above via metal-to-metal antifuse
US5373169A (en) * 1992-12-17 1994-12-13 Actel Corporation Low-temperature process metal-to-metal antifuse employing silicon link
US5270251A (en) * 1993-02-25 1993-12-14 Massachusetts Institute Of Technology Incoherent radiation regulated voltage programmable link
US5315177A (en) * 1993-03-12 1994-05-24 Micron Semiconductor, Inc. One time programmable fully-testable programmable logic device with zero power and anti-fuse cell architecture
US5521423A (en) * 1993-04-19 1996-05-28 Kawasaki Steel Corporation Dielectric structure for anti-fuse programming element
US5350710A (en) * 1993-06-24 1994-09-27 United Microelectronics Corporation Device for preventing antenna effect on circuit
JP3256603B2 (ja) * 1993-07-05 2002-02-12 株式会社東芝 半導体装置及びその製造方法
US5390141A (en) * 1993-07-07 1995-02-14 Massachusetts Institute Of Technology Voltage programmable links programmed with low current transistors
US5449947A (en) * 1993-07-07 1995-09-12 Actel Corporation Read-disturb tolerant metal-to-metal antifuse and fabrication method
US5581111A (en) * 1993-07-07 1996-12-03 Actel Corporation Dielectric-polysilicon-dielectric antifuse for field programmable logic applications
US5498895A (en) * 1993-07-07 1996-03-12 Actel Corporation Process ESD protection devices for use with antifuses
US5369054A (en) * 1993-07-07 1994-11-29 Actel Corporation Circuits for ESD protection of metal-to-metal antifuses during processing
US5572061A (en) * 1993-07-07 1996-11-05 Actel Corporation ESD protection device for antifuses with top polysilicon electrode
US5619063A (en) * 1993-07-07 1997-04-08 Actel Corporation Edgeless, self-aligned, differential oxidation enhanced and difusion-controlled minimum-geometry antifuse and method of fabrication
US5856234A (en) * 1993-09-14 1999-01-05 Actel Corporation Method of fabricating an antifuse
US5391518A (en) * 1993-09-24 1995-02-21 Vlsi Technology, Inc. Method of making a field programmable read only memory (ROM) cell using an amorphous silicon fuse with buried contact polysilicon and metal electrodes
US5427979A (en) * 1993-10-18 1995-06-27 Vlsi Technology, Inc. Method for making multi-level antifuse structure
US5485031A (en) * 1993-11-22 1996-01-16 Actel Corporation Antifuse structure suitable for VLSI application
JPH07263647A (ja) * 1994-02-04 1995-10-13 Canon Inc 電子回路装置
US5682058A (en) * 1994-03-31 1997-10-28 Crosspoint Solutions, Inc. Multilayer antifuse with low leakage and method of manufacture therefor
US5521440A (en) * 1994-05-25 1996-05-28 Crosspoint Solutions, Inc. Low-capacitance, plugged antifuse and method of manufacture therefor
US5633189A (en) * 1994-08-01 1997-05-27 Actel Corporation Method of making metal to metal antifuse
US5552720A (en) * 1994-12-01 1996-09-03 Quicklogic Corporation Method for simultaneous programming of multiple antifuses
US5495181A (en) * 1994-12-01 1996-02-27 Quicklogic Corporation Integrated circuit facilitating simultaneous programming of multiple antifuses
US5962815A (en) 1995-01-18 1999-10-05 Prolinx Labs Corporation Antifuse interconnect between two conducting layers of a printed circuit board
US5663591A (en) * 1995-02-14 1997-09-02 Crosspoint Solutions, Inc. Antifuse with double via, spacer-defined contact
US5789764A (en) * 1995-04-14 1998-08-04 Actel Corporation Antifuse with improved antifuse material
US5592016A (en) * 1995-04-14 1997-01-07 Actel Corporation Antifuse with improved antifuse material
CA2196557A1 (en) * 1995-06-02 1996-12-05 Frank W. Hawley Raised tungsten plug antifuse and fabrication process
US5986322A (en) * 1995-06-06 1999-11-16 Mccollum; John L. Reduced leakage antifuse structure
US5844297A (en) * 1995-09-26 1998-12-01 Symbios, Inc. Antifuse device for use on a field programmable interconnect chip
US5741720A (en) * 1995-10-04 1998-04-21 Actel Corporation Method of programming an improved metal-to-metal via-type antifuse
US5658819A (en) * 1995-11-01 1997-08-19 United Technologies Corporation Antifuse structure and process for manufacturing the same
US5759876A (en) * 1995-11-01 1998-06-02 United Technologies Corporation Method of making an antifuse structure using a metal cap layer
US5793094A (en) * 1995-12-28 1998-08-11 Vlsi Technology, Inc. Methods for fabricating anti-fuse structures
US5744980A (en) * 1996-02-16 1998-04-28 Actel Corporation Flexible, high-performance static RAM architecture for field-programmable gate arrays
US5726484A (en) * 1996-03-06 1998-03-10 Xilinx, Inc. Multilayer amorphous silicon antifuse
US5923075A (en) * 1996-04-08 1999-07-13 Chartered Semiconductor Manufacturing Ltd. Definition of anti-fuse cell for programmable gate array application
US5723358A (en) * 1996-04-29 1998-03-03 Vlsi Technology, Inc. Method of manufacturing amorphous silicon antifuse structures
US5838530A (en) * 1996-07-22 1998-11-17 Zhang; Guobiao Applications of protective ceramics
US5856213A (en) * 1996-07-25 1999-01-05 Vlsi Technology, Inc. Method of fabricating a programmable function system block using two masks and a sacrificial oxide layer between the bottom metal and an amorphous silicon antifuse structure
US5831325A (en) * 1996-08-16 1998-11-03 Zhang; Guobiao Antifuse structures with improved manufacturability
US5899707A (en) * 1996-08-20 1999-05-04 Vlsi Technology, Inc. Method for making doped antifuse structures
US5753540A (en) * 1996-08-20 1998-05-19 Vlsi Technology, Inc. Apparatus and method for programming antifuse structures
US5764563A (en) * 1996-09-30 1998-06-09 Vlsi Technology, Inc. Thin film load structure
US5986319A (en) * 1997-03-19 1999-11-16 Clear Logic, Inc. Laser fuse and antifuse structures formed over the active circuitry of an integrated circuit
US5811870A (en) 1997-05-02 1998-09-22 International Business Machines Corporation Antifuse structure
US6682970B1 (en) * 1998-02-27 2004-01-27 Micron Technology, Inc. Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
US7034353B2 (en) * 1998-02-27 2006-04-25 Micron Technology, Inc. Methods for enhancing capacitors having roughened features to increase charge-storage capacity
US6150706A (en) 1998-02-27 2000-11-21 Micron Technology, Inc. Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
US6021079A (en) * 1998-05-13 2000-02-01 Richard Mann Fast, low cost method of developing code for contact programmable ROMs
US6107165A (en) 1998-08-13 2000-08-22 Quicklogic Corporation Metal-to-metal antifuse having improved barrier layer
US5955751A (en) * 1998-08-13 1999-09-21 Quicklogic Corporation Programmable device having antifuses without programmable material edges and/or corners underneath metal
CN1087871C (zh) * 1998-09-16 2002-07-17 张国飙 集成电路中的似电容元件
US6351406B1 (en) 1998-11-16 2002-02-26 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US7157314B2 (en) 1998-11-16 2007-01-02 Sandisk Corporation Vertically stacked field programmable nonvolatile memory and method of fabrication
US6385074B1 (en) 1998-11-16 2002-05-07 Matrix Semiconductor, Inc. Integrated circuit structure including three-dimensional memory array
US6180994B1 (en) * 1999-01-19 2001-01-30 National Semiconductor Corporation Array of sidewall-contacted antifuses having diffused bit lines
US6277724B1 (en) * 1999-01-19 2001-08-21 National Semiconductor Corporation Method for forming an array of sidewall-contacted antifuses having diffused bit lines
US6420215B1 (en) 2000-04-28 2002-07-16 Matrix Semiconductor, Inc. Three-dimensional memory array and method of fabrication
US6631085B2 (en) * 2000-04-28 2003-10-07 Matrix Semiconductor, Inc. Three-dimensional memory array incorporating serial chain diode stack
AU2001262953A1 (en) 2000-04-28 2001-11-12 Matrix Semiconductor, Inc. Three-dimensional memory array and method of fabrication
US6888750B2 (en) 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
KR100403611B1 (ko) * 2000-06-07 2003-11-01 삼성전자주식회사 금속-절연체-금속 구조의 커패시터 및 그 제조방법
US6344669B1 (en) * 2000-06-13 2002-02-05 United Microelectronics Corp. CMOS sensor
KR100819730B1 (ko) 2000-08-14 2008-04-07 샌디스크 쓰리디 엘엘씨 밀집한 어레이 및 전하 저장 장치와, 그 제조 방법
US6515888B2 (en) 2000-08-14 2003-02-04 Matrix Semiconductor, Inc. Low cost three-dimensional memory array
US6658438B1 (en) 2000-08-14 2003-12-02 Matrix Semiconductor, Inc. Method for deleting stored digital data from write-once memory device
US6424581B1 (en) 2000-08-14 2002-07-23 Matrix Semiconductor, Inc. Write-once memory array controller, system, and method
US6711043B2 (en) 2000-08-14 2004-03-23 Matrix Semiconductor, Inc. Three-dimensional memory cache system
US6580124B1 (en) 2000-08-14 2003-06-17 Matrix Semiconductor Inc. Multigate semiconductor device with vertical channel current and method of fabrication
US6545891B1 (en) * 2000-08-14 2003-04-08 Matrix Semiconductor, Inc. Modular memory device
US6765813B2 (en) * 2000-08-14 2004-07-20 Matrix Semiconductor, Inc. Integrated systems using vertically-stacked three-dimensional memory cells
US6809398B2 (en) 2000-12-14 2004-10-26 Actel Corporation Metal-to-metal antifuse structure and fabrication method
US6661730B1 (en) 2000-12-22 2003-12-09 Matrix Semiconductor, Inc. Partial selection of passive element memory cell sub-arrays for write operation
US6545898B1 (en) 2001-03-21 2003-04-08 Silicon Valley Bank Method and apparatus for writing memory arrays using external source of high programming voltage
US6897514B2 (en) * 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
US6452439B1 (en) 2001-05-07 2002-09-17 International Business Machines Corporation Inductive voltage spike generator with diode shunt
US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US6841813B2 (en) 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6633182B2 (en) 2001-09-05 2003-10-14 Carnegie Mellon University Programmable gate array based on configurable metal interconnect vias
US6465282B1 (en) 2001-09-28 2002-10-15 Infineon Technologies Ag Method of forming a self-aligned antifuse link
US6728126B1 (en) 2002-12-20 2004-04-27 Actel Corporation Programming methods for an amorphous carbon metal-to-metal antifuse
US7459763B1 (en) 2001-10-02 2008-12-02 Actel Corporation Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material
US6965156B1 (en) 2002-12-27 2005-11-15 Actel Corporation Amorphous carbon metal-to-metal antifuse with adhesion promoting layers
US7390726B1 (en) 2001-10-02 2008-06-24 Actel Corporation Switching ratio and on-state resistance of an antifuse programmed below 5 mA and having a Ta or TaN barrier metal layer
US20030062596A1 (en) * 2001-10-02 2003-04-03 Actel Corporation Metal-to-metal antifuse employing carbon-containing antifuse material
US6624485B2 (en) 2001-11-05 2003-09-23 Matrix Semiconductor, Inc. Three-dimensional, mask-programmed read only memory
US6853049B2 (en) 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US20030183868A1 (en) * 2002-04-02 2003-10-02 Peter Fricke Memory structures
US6737675B2 (en) 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
US6657277B1 (en) * 2002-07-19 2003-12-02 United Microelectronics Corporation Method for forming antifuse via structure
US6927474B1 (en) * 2003-05-01 2005-08-09 National Semiconductor Corporation Method of programming an antifuse
CN100407440C (zh) * 2003-07-18 2008-07-30 日本电气株式会社 开关元件、驱动开关元件的方法、可重写的逻辑集成电路以及存储元件
US6897543B1 (en) 2003-08-22 2005-05-24 Altera Corporation Electrically-programmable integrated circuit antifuses
US7177183B2 (en) 2003-09-30 2007-02-13 Sandisk 3D Llc Multiple twin cell non-volatile memory array and logic block structure and method therefor
US7157782B1 (en) 2004-02-17 2007-01-02 Altera Corporation Electrically-programmable transistor antifuses
US8501277B2 (en) * 2004-06-04 2013-08-06 Applied Microstructures, Inc. Durable, heat-resistant multi-layer coatings and coated articles
JP5525694B2 (ja) * 2007-03-14 2014-06-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
CN102160178B (zh) * 2008-09-19 2013-06-19 株式会社半导体能源研究所 半导体器件
CN102473676B (zh) * 2009-07-22 2014-10-08 株式会社村田制作所 反熔丝元件
US8519509B2 (en) 2010-04-16 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9628086B2 (en) * 2013-11-14 2017-04-18 Case Western Reserve University Nanoelectromechanical antifuse and related systems
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof
US11221359B2 (en) 2019-03-15 2022-01-11 International Business Machines Corporation Determining device operability via metal-induced layer exchange
US11462519B2 (en) * 2020-06-01 2022-10-04 Nanya Technology Corporation Semiconductor device with active interposer and method for fabricating the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4748490A (en) * 1985-08-01 1988-05-31 Texas Instruments Incorporated Deep polysilicon emitter antifuse memory cell
US4899205A (en) * 1986-05-09 1990-02-06 Actel Corporation Electrically-programmable low-impedance anti-fuse element
US4823181A (en) * 1986-05-09 1989-04-18 Actel Corporation Programmable low impedance anti-fuse element
US4876220A (en) * 1986-05-16 1989-10-24 Actel Corporation Method of making programmable low impedance interconnect diode element
DE3927033C2 (de) * 1988-08-23 2000-12-21 Seiko Epson Corp Halbleiterbauelement mit Antifuse-Elektrodenanordnung und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
EP0452091A3 (en) 1991-12-11
JP3095811B2 (ja) 2000-10-10
ATE145301T1 (de) 1996-11-15
DE69123074T2 (de) 1997-03-06
US5070384A (en) 1991-12-03
EP0452091A2 (de) 1991-10-16
EP0452091B1 (de) 1996-11-13
JPH04226068A (ja) 1992-08-14

Similar Documents

Publication Publication Date Title
DE69123074D1 (de) Elektrisch programmierbares Antischmelzsicherungselement und Verfahren zu seiner Herstellung
DE1300788C2 (de) Verfahren zur herstellung kugeliger loetperlen auf traegerplatten
EP0276087A3 (de) Mehrschichtverbindung für integrierte Schaltungsstruktur mit zwei oder mehreren metallischen Leiterschichten und Verfahren zum Herstellen derselben
WO2002101767A3 (en) High voltage, high temperature capacitor structures and methods of fabricating same
CA2197491A1 (en) Ferroelectric capacitor and method for manufacturing thereof
EP1313141A3 (de) Halbleiterbauelement und dessen Herstellungsverfahren
TW333669B (en) Electrode structure and method of making for ferroelectric capacitor integrated on silicon
DE69523991D1 (de) Löt-Anschlusskontakt und Verfahren zu seiner Herstellung
WO1997015068A3 (en) Improved metal-to-metal via-type antifuse and methods of programming
DE3311128A1 (de) Piezoelektrischer druckfuehler
DE3442790A1 (de) Verfahren zur herstellung von duennschichtkondensatoren
EP0812021A3 (de) Kondensator mit dielektrischer Dünnschicht und Verfahren zur Herstellung
JPH01204407A (ja) プレーナキャパシタのトリミング方法
DE19820816B4 (de) Bondpadstruktur und entsprechendes Herstellungsverfahren
TW345742B (en) Method for producing integrated circuit capacitor
WO2002089160A3 (de) Elektrisches vielschichtbauelement und verfahren zu dessen herstellung
EP1003208A3 (de) Integrierte Schaltung mit selbstausgerichteter Wasserstoffbariereschicht und Herstellungsmethode
JP2000022105A5 (de)
EP0358040B1 (de) Leitfähige Oberflächenschicht
DE69810422T2 (de) Ferroelektrisches Bauelement für integrierte Halbleiterschaltung und Verfahren zur Herstellung
US2864926A (en) Electrical component and method of making same
DE10161286A1 (de) Integriertes Halbleiterprodukt mit Metall-Isolator-Metall-Kondensator
JPS63276210A (ja) 削減可能なセラミックコンデンサー
EP1223622A3 (de) Halbleiteranordnung und Herstellungsverfahren
JPS57102076A (en) Switching element

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee