DE69121254T2 - Aktive Überbrückung zur Verhinderung von Hochfrequenzversorgungsschwankungen in integrierten Schaltungen - Google Patents

Aktive Überbrückung zur Verhinderung von Hochfrequenzversorgungsschwankungen in integrierten Schaltungen

Info

Publication number
DE69121254T2
DE69121254T2 DE69121254T DE69121254T DE69121254T2 DE 69121254 T2 DE69121254 T2 DE 69121254T2 DE 69121254 T DE69121254 T DE 69121254T DE 69121254 T DE69121254 T DE 69121254T DE 69121254 T2 DE69121254 T2 DE 69121254T2
Authority
DE
Germany
Prior art keywords
transistor
integrated circuit
supply line
qbp
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69121254T
Other languages
German (de)
English (en)
Other versions
DE69121254D1 (de
Inventor
Robert Godfrey Meyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69121254D1 publication Critical patent/DE69121254D1/de
Publication of DE69121254T2 publication Critical patent/DE69121254T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current 
    • G05F1/46Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/613Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in parallel with the load as final control devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
DE69121254T 1990-01-25 1991-01-21 Aktive Überbrückung zur Verhinderung von Hochfrequenzversorgungsschwankungen in integrierten Schaltungen Expired - Fee Related DE69121254T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/469,903 US5049764A (en) 1990-01-25 1990-01-25 Active bypass for inhibiting high-frequency supply voltage variations in integrated circuits

Publications (2)

Publication Number Publication Date
DE69121254D1 DE69121254D1 (de) 1996-09-19
DE69121254T2 true DE69121254T2 (de) 1997-01-30

Family

ID=23865491

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69121254T Expired - Fee Related DE69121254T2 (de) 1990-01-25 1991-01-21 Aktive Überbrückung zur Verhinderung von Hochfrequenzversorgungsschwankungen in integrierten Schaltungen

Country Status (5)

Country Link
US (1) US5049764A (enExample)
EP (1) EP0439230B1 (enExample)
JP (1) JP3055702B2 (enExample)
KR (1) KR910015048A (enExample)
DE (1) DE69121254T2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5701098A (en) * 1995-12-21 1997-12-23 National Semiconductor Corporation AC bypass circuit which provides stabilization of high frequency transient noise
US6456107B1 (en) 2001-01-04 2002-09-24 Sun Microsystems, Inc. CMOS-microprocessor chip and package anti-resonance method
US6483341B2 (en) 2001-01-04 2002-11-19 Sun Microsystems, Inc. CMOS-microprocessor chip and package anti-resonance apparatus
US6441640B1 (en) 2001-01-04 2002-08-27 Sun Microsystems, Inc. CMOS-microprocessor chip and package anti-resonance pass-band shunt apparatus
FI112560B (fi) * 2001-06-27 2003-12-15 Micro Analog Syst Oy RF-suoja Integroidulla piirillä
WO2004074947A2 (en) * 2003-02-14 2004-09-02 Dresser, Inc. Method, system and storage medium for performing online valve diagnostics
US7283894B2 (en) * 2006-02-10 2007-10-16 Dresser, Inc. System and method for fluid regulation
US7539560B2 (en) 2007-01-05 2009-05-26 Dresser, Inc. Control valve and positioner diagnostics
US20110090725A1 (en) * 2009-10-20 2011-04-21 Texas Instruments Inc Systems and Methods of Synchronous Rectifier Control
WO2012157155A1 (ja) 2011-05-16 2012-11-22 パナソニック株式会社 参照電圧安定化回路およびそれを備えた集積回路
EP2761384A4 (en) * 2011-09-30 2015-11-04 Intel Corp DEVICE AND METHOD FOR IMPROVING INTEGRATED VOLTAGE REGULATORS
US9194884B1 (en) * 2012-08-28 2015-11-24 Maxim Integrated Products, Inc. Integrated circuit with analog device fault detection
JPWO2017179301A1 (ja) * 2016-04-13 2019-02-21 株式会社ソシオネクスト 参照電圧安定化回路およびこれを備えた集積回路

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE709376C (de) * 1938-04-30 1941-08-14 Siemens & Halske Akt Ges Schaltungsanordnung mit steilheitsgesteuerten Blindwiderstaenden
US3619659A (en) * 1969-12-02 1971-11-09 Honeywell Inf Systems Integrator amplifier circuit with voltage regulation and temperature compensation
DE2946306C2 (de) * 1979-11-16 1987-02-26 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verstärkerschaltung mit vorgebbarem Wechselstrominnenwiderstand
DE2946305A1 (de) * 1979-11-16 1981-05-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Impedanzschaltung mit steuerbarem widerstandswert
SE423659B (sv) * 1980-09-26 1982-05-17 Ericsson Telefon Ab L M Kopplingsanordning
GB8321549D0 (en) * 1983-08-10 1983-09-14 British Telecomm Electronic switch
US4739193A (en) * 1986-10-30 1988-04-19 Rca Corporation Drive circuit with limited signal transition rate for RFI reduction
US4740717A (en) * 1986-11-25 1988-04-26 North American Philips Corporation, Signetics Division Switching device with dynamic hysteresis
US4947063A (en) * 1987-10-09 1990-08-07 Western Digital Corporation Method and apparatus for reducing transient noise in integrated circuits
NL8702781A (nl) * 1987-11-20 1989-06-16 Philips Nv Geintegreerde logische schakeling met "hot-carrier-stress"-reduktie en instabiliteiten-demping.
JPH07105446B2 (ja) * 1988-01-11 1995-11-13 株式会社東芝 Mos型半導体装置の入力保護回路
US4894567A (en) * 1988-10-17 1990-01-16 Honeywell Inc. Active snubber circuit
US4939616A (en) * 1988-11-01 1990-07-03 Texas Instruments Incorporated Circuit structure with enhanced electrostatic discharge protection
US4893212A (en) * 1988-12-20 1990-01-09 North American Philips Corp. Protection of power integrated circuits against load voltage surges

Also Published As

Publication number Publication date
KR910015048A (ko) 1991-08-31
EP0439230A3 (en) 1993-05-26
EP0439230A2 (en) 1991-07-31
JP3055702B2 (ja) 2000-06-26
US5049764A (en) 1991-09-17
US5049764B1 (enExample) 1992-12-15
JPH04212512A (ja) 1992-08-04
EP0439230B1 (en) 1996-08-14
DE69121254D1 (de) 1996-09-19

Similar Documents

Publication Publication Date Title
DE3117009C2 (enExample)
DE4124757C2 (de) Halbleiter-Leistungsmodul
EP0002751A1 (de) Schaltkreis zur Einstellung des Widerstandswertes eines Abschlusswiderstandes von Leitverbindungen in Halbleiterstrukturen
DE10309330A1 (de) Integrierter Halbleiter-Schalter
DE69417199T2 (de) LC-Element, Halbleiteranordnung, und Verfahren zur Herstellung des LC-Elements
DE2500057C2 (de) Schaltungsanordnung zur Frequenzstabilisierung einer integrierten Schaltung
DE68928483T2 (de) Energieversorgungskontakt für integrierte Schaltungen
DE69332303T2 (de) Gleichrichtende Übertragungstorschaltung
EP0582125B1 (de) Ansteuerschaltung für einen Leistungs-MOSFET mit sourceseitiger Last
DE3034902A1 (de) Impulsunterdruecker
DE69329543T2 (de) Herstellung eines Feldeffekttransistors mit integrierter Schottky-Klammerungsdiode
DE2401701A1 (de) Transistorleistungsschalter
DE112019001263B4 (de) Schaltsteuerschaltung und zündvorrichtung
DE10103337B4 (de) Leistungs-Halbleiterelement mit Diodeneinrichtungen zur Temperaturerfassung und zum Absorbieren von statischer Elektrizität sowie Leistungs-Halbleitervorrichtung mit einem derartigen Leistungs-Halbleiterelement
DE4300953A1 (en) Temp.-stabilised electronic ignition for IC engine - has series opposition Zener diodes between base of control transistor and earth
DE69623265T2 (de) Emitterballast ueberbrueckung für radiofrequenz-leistungstransistoren
DE102005010013B4 (de) Stromregler mit einem Transistor und einem Messwiderstand
DE69104642T2 (de) Ein-/Ausgangsschutzschaltung und Halbleiterbauelement mit dieser Schaltung.
DE4429903B4 (de) Leistungshalbleiteranordnung mit Überlastschutzschaltung
DE68916721T2 (de) Esd-schutzschaltung mit kanalverarmung.
DE4423733C2 (de) Integriertes Leistungs-Halbleiterbauelement mit Schutzstruktur
DE102005001138A1 (de) Snubber-Schaltung
DE10249893A1 (de) Halbleiterschaltung
DE69324621T2 (de) Vorrichtung mit Substratisolation
DE2535661A1 (de) Logischer schaltkreis

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee