DE69118286T2 - Quelle zur Erzeugung eines schnellen Atomstrahls - Google Patents
Quelle zur Erzeugung eines schnellen AtomstrahlsInfo
- Publication number
- DE69118286T2 DE69118286T2 DE69118286T DE69118286T DE69118286T2 DE 69118286 T2 DE69118286 T2 DE 69118286T2 DE 69118286 T DE69118286 T DE 69118286T DE 69118286 T DE69118286 T DE 69118286T DE 69118286 T2 DE69118286 T2 DE 69118286T2
- Authority
- DE
- Germany
- Prior art keywords
- source
- speed
- ion
- fast atom
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010884 ion-beam technique Methods 0.000 abstract 5
- 238000010894 electron beam technology Methods 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 4
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
- H05H3/02—Molecular or atomic beam generation
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electron Sources, Ion Sources (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Particle Accelerators (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2226486A JPH0799720B2 (ja) | 1990-08-30 | 1990-08-30 | 高速原子線源 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69118286D1 DE69118286D1 (de) | 1996-05-02 |
DE69118286T2 true DE69118286T2 (de) | 1996-08-29 |
Family
ID=16845858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69118286T Expired - Fee Related DE69118286T2 (de) | 1990-08-30 | 1991-08-28 | Quelle zur Erzeugung eines schnellen Atomstrahls |
Country Status (5)
Country | Link |
---|---|
US (1) | US5221841A (de) |
EP (1) | EP0475199B1 (de) |
JP (1) | JPH0799720B2 (de) |
AT (1) | ATE136192T1 (de) |
DE (1) | DE69118286T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05251408A (ja) * | 1992-03-06 | 1993-09-28 | Ebara Corp | 半導体ウェーハのエッチング装置 |
FR2706087B1 (fr) * | 1993-06-04 | 1995-08-04 | Framatome Connectors France | Ensemble de connexion présentant des éléments de connexion superposés. |
US5519213A (en) * | 1993-08-20 | 1996-05-21 | Ebara Corporation | Fast atom beam source |
US5589685A (en) * | 1995-05-26 | 1996-12-31 | Jen Wu; Kuang | Matrix enhanced SIMS |
GB9714576D0 (en) * | 1997-07-10 | 1997-09-17 | Applied Materials Inc | Method and apparatus for neutralising space charge in an ion beam |
US6835317B2 (en) * | 1997-11-04 | 2004-12-28 | Ebara Corporation | Method of making substrate with micro-protrusions or micro-cavities |
US6671034B1 (en) * | 1998-04-30 | 2003-12-30 | Ebara Corporation | Microfabrication of pattern imprinting |
US6359286B1 (en) | 1998-07-10 | 2002-03-19 | Applied Materials, Inc. | Method and apparatus for neutralizing space charge in an ion beam |
JP3530942B2 (ja) * | 2002-03-05 | 2004-05-24 | 独立行政法人通信総合研究所 | 分子ビーム発生方法及び装置 |
KR100917010B1 (ko) * | 2002-11-27 | 2009-09-10 | 삼성전자주식회사 | 배향막 형성 방법 및 장치 |
GB2619948A (en) * | 2022-06-22 | 2023-12-27 | Fusion Reactors Ltd | Neutral beam injection apparatus and method |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3846636A (en) * | 1971-08-31 | 1974-11-05 | Reactor Accelerator Dev Int In | Method and means for utilizing accelerated neutral particles |
US4916311A (en) * | 1987-03-12 | 1990-04-10 | Mitsubishi Denki Kabushiki Kaisha | Ion beaming irradiating apparatus including ion neutralizer |
US4818872A (en) * | 1987-05-11 | 1989-04-04 | Microbeam Inc. | Integrated charge neutralization and imaging system |
JPH02100299A (ja) * | 1988-10-06 | 1990-04-12 | Nec Corp | 高速原子源 |
-
1990
- 1990-08-30 JP JP2226486A patent/JPH0799720B2/ja not_active Expired - Lifetime
-
1991
- 1991-08-28 AT AT91114476T patent/ATE136192T1/de not_active IP Right Cessation
- 1991-08-28 DE DE69118286T patent/DE69118286T2/de not_active Expired - Fee Related
- 1991-08-28 EP EP91114476A patent/EP0475199B1/de not_active Expired - Lifetime
- 1991-08-30 US US07/752,785 patent/US5221841A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0475199A2 (de) | 1992-03-18 |
US5221841A (en) | 1993-06-22 |
ATE136192T1 (de) | 1996-04-15 |
EP0475199A3 (en) | 1992-07-08 |
DE69118286D1 (de) | 1996-05-02 |
JPH0799720B2 (ja) | 1995-10-25 |
EP0475199B1 (de) | 1996-03-27 |
JPH04109598A (ja) | 1992-04-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |