JPS6483657A - Vacuum deposition device - Google Patents
Vacuum deposition deviceInfo
- Publication number
- JPS6483657A JPS6483657A JP24018887A JP24018887A JPS6483657A JP S6483657 A JPS6483657 A JP S6483657A JP 24018887 A JP24018887 A JP 24018887A JP 24018887 A JP24018887 A JP 24018887A JP S6483657 A JPS6483657 A JP S6483657A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- intensity
- reflected
- scintillator
- supply voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To return abnormal crystal growth to normal crystal growth in a real time by measuring the intensity of the reflected beam of an electron beam projected onto a thin film forming surface and controlling the irradiation conditions of the evaporating particles from an evaporation source according to the result thereof. CONSTITUTION:A scintillator 8 is disposed in the direction where the electron beam E1 from an electron gun 7 is reflected by a crystal growing surface 3a. The scintillator 8 generates the light corresponding to the intensity of the electron beam E2 when said beam enters the scintillator. This light is converted by a photomultiplier 9 to an electric signal which is then taken via an amplifier 10 into a computer 11. The oscillation of the intensity of the reflected electron beam E2 is computed by the computer 11 which outputs the signal relating to the opening and closing of a shutter 4 to a driving control device 4a according to the result of the computation. The signal is further outputted to a control circuit 51 for the supply voltage to an ionization part and a control circuit 21 for the supply voltage to an acceleration electrode, by which the amplitude of the intensity of the reflected beam E2 of the electron beam is maintained constant.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62240188A JP2625760B2 (en) | 1987-09-24 | 1987-09-24 | Vacuum deposition equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62240188A JP2625760B2 (en) | 1987-09-24 | 1987-09-24 | Vacuum deposition equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6483657A true JPS6483657A (en) | 1989-03-29 |
JP2625760B2 JP2625760B2 (en) | 1997-07-02 |
Family
ID=17055774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62240188A Expired - Fee Related JP2625760B2 (en) | 1987-09-24 | 1987-09-24 | Vacuum deposition equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2625760B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02209465A (en) * | 1989-02-08 | 1990-08-20 | Komatsu Ltd | Production of thin film el element luminous layer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59132349A (en) * | 1982-11-26 | 1984-07-30 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Method of growing alloy thin-film |
-
1987
- 1987-09-24 JP JP62240188A patent/JP2625760B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59132349A (en) * | 1982-11-26 | 1984-07-30 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Method of growing alloy thin-film |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02209465A (en) * | 1989-02-08 | 1990-08-20 | Komatsu Ltd | Production of thin film el element luminous layer |
Also Published As
Publication number | Publication date |
---|---|
JP2625760B2 (en) | 1997-07-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |