JPS6483657A - Vacuum deposition device - Google Patents

Vacuum deposition device

Info

Publication number
JPS6483657A
JPS6483657A JP24018887A JP24018887A JPS6483657A JP S6483657 A JPS6483657 A JP S6483657A JP 24018887 A JP24018887 A JP 24018887A JP 24018887 A JP24018887 A JP 24018887A JP S6483657 A JPS6483657 A JP S6483657A
Authority
JP
Japan
Prior art keywords
electron beam
intensity
reflected
scintillator
supply voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24018887A
Other languages
Japanese (ja)
Other versions
JP2625760B2 (en
Inventor
Makoto Shinohara
Fumihiko Otani
Toshinori Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP62240188A priority Critical patent/JP2625760B2/en
Publication of JPS6483657A publication Critical patent/JPS6483657A/en
Application granted granted Critical
Publication of JP2625760B2 publication Critical patent/JP2625760B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To return abnormal crystal growth to normal crystal growth in a real time by measuring the intensity of the reflected beam of an electron beam projected onto a thin film forming surface and controlling the irradiation conditions of the evaporating particles from an evaporation source according to the result thereof. CONSTITUTION:A scintillator 8 is disposed in the direction where the electron beam E1 from an electron gun 7 is reflected by a crystal growing surface 3a. The scintillator 8 generates the light corresponding to the intensity of the electron beam E2 when said beam enters the scintillator. This light is converted by a photomultiplier 9 to an electric signal which is then taken via an amplifier 10 into a computer 11. The oscillation of the intensity of the reflected electron beam E2 is computed by the computer 11 which outputs the signal relating to the opening and closing of a shutter 4 to a driving control device 4a according to the result of the computation. The signal is further outputted to a control circuit 51 for the supply voltage to an ionization part and a control circuit 21 for the supply voltage to an acceleration electrode, by which the amplitude of the intensity of the reflected beam E2 of the electron beam is maintained constant.
JP62240188A 1987-09-24 1987-09-24 Vacuum deposition equipment Expired - Fee Related JP2625760B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62240188A JP2625760B2 (en) 1987-09-24 1987-09-24 Vacuum deposition equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62240188A JP2625760B2 (en) 1987-09-24 1987-09-24 Vacuum deposition equipment

Publications (2)

Publication Number Publication Date
JPS6483657A true JPS6483657A (en) 1989-03-29
JP2625760B2 JP2625760B2 (en) 1997-07-02

Family

ID=17055774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62240188A Expired - Fee Related JP2625760B2 (en) 1987-09-24 1987-09-24 Vacuum deposition equipment

Country Status (1)

Country Link
JP (1) JP2625760B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02209465A (en) * 1989-02-08 1990-08-20 Komatsu Ltd Production of thin film el element luminous layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132349A (en) * 1982-11-26 1984-07-30 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Method of growing alloy thin-film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132349A (en) * 1982-11-26 1984-07-30 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Method of growing alloy thin-film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02209465A (en) * 1989-02-08 1990-08-20 Komatsu Ltd Production of thin film el element luminous layer

Also Published As

Publication number Publication date
JP2625760B2 (en) 1997-07-02

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees